Comparison of Novel Chlorine, Bromine and Iodine Plasma Chemistries for Anisotropic Trench Etching In GaN, InN and Ain

1998 ◽  
Vol 512 ◽  
Author(s):  
Hyun Cho ◽  
T. Maeda ◽  
J. D. MacKenzie ◽  
S. M. Donovan ◽  
C. R. Abemathy ◽  
...  
Keyword(s):  
Pattern Transfer ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Etch Rates ◽  
Coupled Plasmas

ABSTRACTAnisotropic pattern transfer has been performed for GaN, InN and AIN in Cl2/Ar, BI3/Ar and BBr3/Ar Inductively Coupled Plasmas(ICP). Controlled etch rates in the range of 500–1500Å·min−1 are obtained for III-nitride materials in Cl2/Ar chemistry. Etch selectivities of 100:1 were achieved for InN over both GaN and AIN in the BI3 mixtures, while for BBr3 discharges values of 100:1 for InN over AIN and 25:1 for InN over GaN were measured.

High resolution pattern transfer in III-nitrides using BCl3/Ar inductively coupled plasmas

1998 ◽  
Vol 42 (9) ◽  
pp. 1719-1722
Author(s):  
Hyun Cho ◽  
S.M Donovan ◽  
J.D MacKenzie ◽  
C.R Abernathy ◽  
S.J Pearton ◽  
...  
Keyword(s):  
High Resolution ◽  
Pattern Transfer ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas

scholarly journals Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar and Cl2/He

1999 ◽  
Vol 4 (S1) ◽  
pp. 763-768
Author(s):  
Hyun Cho ◽  
Y.B. Hahn ◽  
D.C. Hays ◽  
K.B. Jung ◽  
S.M. Donovan ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Inductively Coupled Plasmas ◽  
Source Power ◽  
Strong Function ◽  
Inductively Coupled ◽  
Physical Sputtering ◽  
Etch Rates ◽  
Coupled Plasmas ◽  
Nitrogen Bond

The role of additive noble gases He, Ar and Xe to Cl2-based Inductively Coupled Plasmas for etching of GaN, AlN and InN were examined. The etch rates were a strong function of chlorine concentration, rf chuck power and ICP source power. The highest etch rates for InN were obtained with Cl2/Xe, while the highest rates for AlN and GaN were obtained with Cl2/He. Efficient breaking of the III-nitrogen bond is crucial for attaining high etch rates. The InN etching was dominated by physical sputtering, in contrast to GaN and AlN. In the latter cases, the etch rates were limited by initial breaking of the III-nitrogen bond. Maximum selectivities of ∼ 80 for InN to GaN and InN to AlN were obtained.

DRY ETCHING OF SnO2 AND ZnO FILMS IN HALOGEN-BASED INDUCTIVELY COUPLED PLASMAS

2011 ◽  
Vol 25 (31) ◽  
pp. 4237-4240 ◽  
Author(s):  
JONG CHEON PARK ◽  
JIN KON KIM ◽  
TAE GYU KIM ◽  
DEUG WOO LEE ◽  
HYUN CHO ◽  
...  
Keyword(s):  
Process Window ◽  
Zno Films ◽  
Inductively Coupled Plasmas ◽  
Oxide Nanowires ◽  
Inductively Coupled ◽  
Aspect Ratios ◽  
High Anisotropy ◽  
Mask Material ◽  
Etch Rates ◽  
Coupled Plasmas

High density plasma etching of SnO 2 and ZnO films was performed in chlorine- ( Cl 2/ Ar and BCl 3/ Ar ) and fluorine-based ( CF 4/ Ar and SF 6/ Ar ) inductively coupled plasmas. The etch process window for fabricating metal oxide nanowires with high aspect ratios including high and controllable etch rates, high etch selectivities to mask material and high anisotropy was established. Maximum etch rates of ~2050 Å/minute ( BCl 3/ Ar ) and ~1950 Å/minute ( SF 6/ Ar ) for ZnO , and ~1950 Å/minute ( Cl 2/ Ar ) and ~2000 Å/minute ( SF 6/ Ar ) for SnO 2 were obtained. Ni was found to provide very high etch selectivities with maximum values of ~67 to SnO 2 and ~17 to ZnO , respectively.

Cl2-Based Dry Etching Of The AIGaInN System In Inductively Coupled Plasmas

1997 ◽  
Vol 483 ◽  
Author(s):  
Hyun Cho ◽  
C. B. Vartuli ◽  
C. R. Abernathy ◽  
S. M. Donovan ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Systematic Study ◽  
Etch Rate ◽  
Dry Etching ◽  
The Other ◽  
Pattern Transfer ◽  
Inductively Coupled Plasmas ◽  
Source Power ◽  
Inductively Coupled ◽  
Coupled Plasmas

AbstractCl2-based Inductively Coupled Plamas with low additional dc self-biases(−100V) produce convenient etch rates(500–1500Å.min−1) for GaN, AIN, InN, InAiN and InGaN. A systematic study of the effects of additive gas(Ar, N2, H2), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent C12 in the discharge for all three mixtures, and to have an increase(decrease) in etch rate with source power(pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily achieved. Maximum etch selectivities of approximately 6 for InN over the other nitrides were obtained.

Recouping etch rates in pulsed inductively coupled plasmas

2011 ◽  
Vol 29 (1) ◽  
pp. 011017 ◽  
Author(s):  
Ankur Agarwal ◽  
Phillip J. Stout ◽  
Samer Banna ◽  
Shahid Rauf ◽  
Ken Collins
Keyword(s):  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Etch Rates ◽  
Coupled Plasmas

scholarly journals Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar AND Cl2/He

1998 ◽  
Vol 537 ◽  
Author(s):  
Hyun Cho ◽  
Y.B. Hahn ◽  
D.C. Hays ◽  
K.B. Jung ◽  
S.M. Donovan ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Inductively Coupled Plasmas ◽  
Source Power ◽  
Strong Function ◽  
Inductively Coupled ◽  
Physical Sputtering ◽  
Etch Rates ◽  
Coupled Plasmas ◽  
Nitrogen Bond

AbstractThe role of additive noble gases He, Ar and Xe to Cl2-based Inductively Coupled Plasmas for etching of GaN, AIN and InN were examined. The etch rates were a strong function of chlorine concentration, rf chuck power and ICP source power. The highest etch rates for InN were obtained with Cl2/Xe, while the highest rates for AIN and GaN were obtained with Cl2/He. Efficient breaking of the III-nitrogen bond is crucial for attaining high etch rates. The InN etching was dominated by physical sputtering, in contrast to GaN and AIN. In the latter cases, the etch rates were limited by initial breaking of the III-nitrogen bond. Maximum selectivities of ∼ 80 for InN to GaN and InN to AIN were obtained.

High density plasma etching of ultrananocrystalline diamond films in O2/CF4 and O2/SF6 inductively coupled plasmas

2015 ◽  
Vol 29 (06n07) ◽  
pp. 1540022
Author(s):  
Jong Cheon Park ◽  
Seong Hak Kim ◽  
Tae Gyu Kim ◽  
Jin Kon Kim ◽  
Hyun Cho ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Control Sample ◽  
Pattern Transfer ◽  
Inductively Coupled Plasmas ◽  
Vertical Sidewall ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Ultrananocrystalline Diamond ◽  
Coupled Plasmas

Inductively coupled plasma etching of ultrananocrystalline diamond (UNCD) films was performed in O 2/ CF 4 and O 2/ SF 6 discharges. Higher etch rates were produced for the O 2/ SF 6 discharges and the films etched in the 10 O 2/5 CF 4 discharges retained smooth surface morphology similar to the unetched control sample. Al mask showed a good etch selectivity to the UNCD for both plasma chemistries and highly anisotropic pattern transfer with a vertical sidewall profile was achieved.

scholarly journals Erratum: Power Matching to Pulsed Inductively Coupled Plasmas [J. Appl. Phys. 127, 133302 (2020)]

2020 ◽  
Vol 128 (8) ◽  
pp. 089901
Author(s):  
Chenhui Qu ◽  
Steven J. Lanham ◽  
Steven C. Shannon ◽  
Sang Ki Nam ◽  
Mark J. Kushner
Keyword(s):  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Power Matching ◽  
Coupled Plasmas

Etching characteristics of ZnO thin films in chlorine-containing inductively coupled plasmas

2006 ◽  
Vol 83 (2) ◽  
pp. 328-335 ◽  
Author(s):  
S.W. Na ◽  
M.H. Shin ◽  
Y.M. Chung ◽  
J.G. Han ◽  
S.H. Jeung ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas
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