Selected Area Epitaxial Regrowth of Amorphous Si/(100) Si Structures by Laser Annealing

1985 ◽  
Vol 49 ◽  
Author(s):  
A. Christou ◽  
C. Varmazis ◽  
T. Efthimiopoulos ◽  
C. Fotakis
Keyword(s):  
Surface Roughness ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Leakage Currents ◽  
Excimer Laser Annealing ◽  
Epitaxial Regrowth ◽  
Amorphous Si

AbstractExcimer laser KrF (248 nm) annealing at 93 mj/cm2 and 175 mJ/cm2 has been found to recrystallize amorphous silicon on (100)Si. The major impurities introduced by excimer laser annealing are carbon, while surface roughness remains as a major problem. Channel mobilities measured on MOSFETs processed on epitaxially regrown silicon were 98-115 cm2/v.s. Leakage currents between recrystallized silicon regions were 1-2 uA/cm2.

Nucleation Process During Excimer Laser Annealing of Amorphous Silicon Thin Films on Glass: A Molecular-dynamics Study

2006 ◽  
Vol 958 ◽  
Author(s):  
Shinji Munetoh ◽  
Takanori Mitani ◽  
Takahide Kuranaga ◽  
Teruaki Motooka
Keyword(s):  
Thin Films ◽  
Molecular Dynamics ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Surface Region ◽  
Excimer Laser Annealing ◽  
Silicon Thin Films ◽  
Steady State Temperature ◽  
Dynamics Simulations

ABSTRACTWe have performed molecular-dynamics simulations of heating, melting and recrystallization processes in amorphous silicon (a-Si) thin films deposited on glass during excimer laser annealing. By partially heating the a-Si surface region with 2 nm depth and removing thermal energy from the bottom of the glass substrate, a steady-state temperature profile was obtained in the a-Si layer with the thickness of 15 nm and only the surface region was melted. It was found that nucleation predominantly occurred in the a-Si region as judged by the coordination numbers and diffusion constants of atoms in the region. The results suggest that nucleation occurs in unmelted residual a-Si region during the laser irradiation and then crystal growth proceeds toward liquid Si region under the near-complete melting condition.

On-Chip Bottom-Gate Polysilicon and Amorphous Silicon Thin-Film Transistors Using Excimer Laser Annealing

1990 ◽  
Vol 29 (Part 2, No. 10) ◽  
pp. L1775-L1777 ◽  
Author(s):  
Kazuhiro Shimizu ◽  
Osamu Sugiura ◽  
Masakiyo Matsumura
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Silicon Thin Film ◽  
Excimer Laser Annealing ◽  
On Chip ◽  
Bottom Gate

Effects of Excimer Laser Annealing Process on the Ni-Sputtered Amorphous Silicon Film

2010 ◽  
Vol 13 (10) ◽  
pp. H346 ◽  
Author(s):  
Moojin Kim ◽  
GuangHai Jin ◽  
Hoonkee Min ◽  
HoKyoon Chung ◽  
Sangsoo Kim ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Film ◽  
Annealing Process ◽  
Excimer Laser Annealing ◽  
Amorphous Silicon Film

Single shot excimer laser annealing of amorphous silicon: effect of hydrogen on the properties of the poly silicon

1995 ◽  
Vol 397 ◽  
Author(s):  
P. Boher ◽  
M. Stehle ◽  
B. Godard ◽  
J.L. Stehle
Keyword(s):  
Thermal Treatment ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Low Cost ◽  
Structural Quality ◽  
Single Shot ◽  
Excimer Laser Annealing ◽  
Medium Temperature ◽  
Glass Substrates

ABSTRACTPECVD amorphous silicon films deposited at different temperatures on low cost glass substrates have been treated by a Single Shot Excimer Laser Annealing (SSELA) at various energy densities. The influence of a thermal treatment at medium temperature (400°C) prior to the SSELA treatment was also investigated. Spectroscopie ellipsometry and Raman characterizations show that hydrogen contamination produces an important roughness increase with very little polycrystalline grains (650nm) after laser treatment. The thermal treatment prior laser annealing improves drastically the structural quality of the films. Structural results are correlated with the electrical performances of the TFT produced on these films.

Single shot excimer laser annealing of amorphous silicon for AMLCD

1996 ◽  
pp. 376-383
Author(s):  
Pierre Boher ◽  
Jean Louis Stehle ◽  
Marc Stehle ◽  
Bruno Godard
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Single Shot ◽  
Excimer Laser Annealing

Crystallization Processes of Amorphous Si During Excimer Laser Annealing in Complete-melting and Near-complete-Melting Conditions: A Molecular Dynamics Study

2008 ◽  
Vol 1150 ◽  
Author(s):  
Tomohiko Ogata ◽  
Takanori Mitani ◽  
Shinji Munetoh ◽  
Teruaki Motooka
Keyword(s):  
Molecular Dynamics ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Irradiation Time ◽  
Md Simulations ◽  
Melting Rate ◽  
Excimer Laser Annealing ◽  
Complete Melting ◽  
Amorphous Si ◽  
Melting Conditions

AbstractWe investigated crystallization processes of amorphous Si (a-Si) during the excimer laser annealing in the complete-melting and near-complete-melting conditions by using molecular dynamics simulations. The initial a-Si configuration was prepared by quenching liquid Si (l-Si) in a MD cell with a size of 50×50×150Å3 composed of 18666 atoms. KrF excimer laser (wavelength: 248nm) annealing processes of a-Si were calculated by taking account of the change in the optical constant upon melting during a laser pulse shot with the intensity Ioexp[−(t–t0)2/ς2] (Io: laser fluence, t: irradiation time). The refractive indices of a-Si and l-Si were set at n+ik=1.0+3.0i and n+ik=1.8+3.0i, respectively. The simulated results well reproduced the observed melting rate and the near-complete-melting and complete-melting conditions were obtained for Io = 160mJ/cm2 and 180mJ/cm2, respectively. It was found that larger grains were obtained in the near-complete-melting condition. Our MD simulations also suggest that nucleation occurs first in a-Si and subsequent crystallization proceeds toward l-Si in the near-complete-melting case.

Excimer-Laser Annealing Technology for Hydrogenated Amorphous-Silicon Devices

1995 ◽  
Vol 34 (Part 1, No. 11) ◽  
pp. 5971-5976 ◽  
Author(s):  
Chang-Dong Kim ◽  
Ryoichi Ishihara ◽  
Masakiyo Matsumura
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Hydrogenated Amorphous Silicon ◽  
Excimer Laser Annealing ◽  
Silicon Devices ◽  
Hydrogenated Amorphous

Lateral Solid-Phase Recrystallization from the Crystal Seed Selectively Formed by Excimer Laser Annealing in Ge-Ion-Implanted Amorphous Silicon Films

2000 ◽  
Vol 39 (Part 1, No. 9A) ◽  
pp. 5063-5068 ◽  
Author(s):  
Jin-Wook Seo ◽  
Satoru Akiyama ◽  
Yoichiro Aya ◽  
Tomoyuki Nohda ◽  
Hiroki Hamada ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solid Phase ◽  
Silicon Films ◽  
Excimer Laser Annealing ◽  
Phase Recrystallization ◽  
Crystal Seed ◽  
Ion Implanted

Phase transformation in amorphous silicon under excimer laser annealing studied by Raman spectroscopy and mobility measurements

1996 ◽  
Vol 79 (12) ◽  
pp. 9064-9073 ◽  
Author(s):  
Takashi Inushima ◽  
Naoto Kusumoto ◽  
Nobuo Kubo ◽  
Hong‐Yong Zhang ◽  
Shumpei Yamazaki
Keyword(s):  
Raman Spectroscopy ◽  
Phase Transformation ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing
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