Рост концентрации носителей заряда в тонких пленках висмута

The reasons for increasing the charge carriers concentration in thin bismuth films are discussed. The concentration was calculated on the basis of the measured electrical and galvanomagnetic coefficients at the temperature 77K under the two-band approximation and the assumption that the charge carriers free path in the film is isotropic.

Деформация тонких пленок полуметаллов методом купольного изгиба подложки

The results of a study of the semimetal films deformation produced by dome bending of the substrate are presented. Deformation control was carried out by means of X-ray diffraction analysis. It is shown that the dome bending method can be used to study films under planar deformation in a film-substrate system with different thermal expansion coefficients. The maximum in-plane deformation for bismuth films of 1 mkm thickness order was found. It was shown that the deformation created by the dome bending of the substrate in combination with the use of substrates with different temperature expansion makes it possible to obtain a relative in-plane deformation of bismuth films up to 0.8% at 300 K.

Structural and Physical Properties of Ultrathin Bismuth Films

Bismuth films are interesting objects for research because of the many effects occurring when the film thickness is less than 70 nm. The electronic band structure changes significantly depending on the film thickness. Consequently, by changing the film thickness, it is possible to control the physical properties of the material. The purpose of this paper is to give a brief description of the basic structural and physical properties of bismuth films. The structural properties, namely, morphology, roughness, nanoparticle size, and texture, are discussed first, followed by a description of the transport properties and the band structure. The transport properties are described using the semi-metal–semiconductor transition, which is associated with the quantum size effect. In addition, an important characteristic is a two-channel model, which allows describing the change in resistivity with temperature. The band structure of bismuth films is the most interesting part due to the anomalous effects for which there is still no unambiguous explanation. These effects include anomalous spin polarization, nontrivial topology, and zone changes near the edge of the film.

Terahertz Photoconductivity Spectra of Electrodeposited Thin Bi Films

Electron dynamics in the polycrystalline bismuth films were investigated by measuring emitted terahertz (THz) radiation pulses after their photoexcitation by tunable wavelength femtosecond duration optical pulses. Bi films were grown on metallic Au, Pt, and Ag substrates by the electrodeposition method with the Triton X-100 electrolyte additive, which allowed us to obtain more uniform films with consistent grain sizes on any substrate. It was shown that THz pulses are generated due to the spatial separation of photoexcited electrons and holes diffusing from the illuminated surface at different rates. The THz photoconductivity spectra analysis has led to a conclusion that the thermalization of more mobile carriers (electrons) is dominated by the carrier–carrier scattering rather than by their interaction with the lattice.