Voltage Dependent Field Emission Energy Distribution Analysis of Wide Bandgap Materials

1998 ◽  
Vol 509 ◽  
Author(s):  
B.L. Mccarson ◽  
R. Schlesser ◽  
Z. Sitar
Keyword(s):  
Energy Distribution ◽  
Field Emission ◽  
Electron Emission ◽  
Wide Bandgap ◽  
Emission Energy ◽  
Wide Bandgap Material ◽  
Voltage Dependent ◽  
Feed Analysis ◽  
Wide Bandgap Materials ◽  
Dependent Field

AbstractField emission from wide bandgap materials was investigated through voltage dependent field emission energy distribution (V-FEED) analysis. As compared to classical I-V characterization, V-FEED analysis can provide additional, detailed information about the origin of and the mechanism responsible for the field emission of electrons. The V-FEED technique consists of measuring the energy distribution of field emitted electrons collected at various extraction voltages. By measuring changes in the energy of the field emission peak at different voltages, data can be extrapolated to flat-band condition to determine the energy of the band from which the electron emission originated. In this study, field emission from cubic boron nitride (c-BN) coated and diamond coated tip-shaped Mo emitters was examined. For the nominally intrinsic wide bandgap coating materials studied, a linear voltage drop across the wide bandgap material, usually on the order of 1% of extraction voltage was observed and explained by field induced band-bending. For the intrinsic c-BN and diamond samples studied, the electron emission originated from the conduction band minimum at the wide bandgap material/vacuum interface.

Mechanisms of Field Emission from Cubic Boron Nitride Coated Molybdenum Emitters

1998 ◽  
Vol 509 ◽  
Author(s):  
R. Schlesser ◽  
B.L. Mccarson ◽  
Z. Sitar
Keyword(s):  
Boron Nitride ◽  
Field Emission ◽  
Voltage Drop ◽  
Cubic Boron Nitride ◽  
Emission Current ◽  
Flat Band ◽  
Ohmic Resistance ◽  
Before And After ◽  
Voltage Dependent ◽  
Feed Analysis

AbstractA combination of classical I-V characterization and voltage-dependent field emission energy distribution (V-FEED) analysis was employed to investigate the mechanisms that dominate field emission from tip-shaped Mo emitters electrophoretically coated with nominally intrinsic, cubic boron nitride (c-BN) powders. I-V characterization of Mo emitters before and after coating showed that the c-BN coating enhanced the field emission current by 2 orders of magnitude. V-FEED analysis revealed a voltage drop proportional to the applied voltage across the c-BN coating due to field penetration. This voltage drop was typically in the order of several Volts for applied voltages of several 100 Volts, and a cathode-to-anode distance of 500 μm. Extrapolation of V-FEED data to flat band condition identified the conduction band minimum of c-BN as the origin of field emitted electrons. At larger field emission currents, an additional voltage drop was observed and was found to be proportional to the emission current. This observation was interpreted in terms of an ohmic resistance at the Mo/c-BN interface and was estimated to be in the order of 10 MΩ.

The influence of surface topography on the field emission of nanostructured copper oxide thin films grown by oblique incidence deposition

2015 ◽  
Vol 3 (24) ◽  
pp. 6389-6394 ◽  
Author(s):  
S. Chatterjee ◽  
M. Kumar ◽  
A. Pal ◽  
I. Thakur ◽  
T. Som
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Field Emission ◽  
Electron Emission ◽  
Emission Characteristic ◽  
Oxide Thin Films ◽  
Turn On ◽  
Sputter Deposited ◽  
Deposited Film ◽  
Dependent Field

The surface morphology dependent field electron emission characteristic of copper oxide thin films shows superior field emission of obliquely sputter deposited thin film (turn-on field ∼1.3 V μm−1) compared to normally deposited film.

Field Emission Energy Distribution (FEED)

1973 ◽  
Vol 45 (3) ◽  
pp. 487-548 ◽  
Author(s):  
J. W. Gadzuk ◽  
E. W. Plummer
Keyword(s):  
Energy Distribution ◽  
Field Emission ◽  
Emission Energy
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