Comparison of Short Time Annealing of Implanted Silicon Layers With Tungsten-Halogen Lamp and Mercury Arc Lamp Sources

1985 ◽  
Vol 52 ◽  
Author(s):  
D. Wouters ◽  
D. Avau ◽  
P. Mertens ◽  
H. E. Maes
Keyword(s):  
Light Source ◽  
Electrical Activation ◽  
Halogen Lamp ◽  
Conventional Furnace ◽  
Profile Control ◽  
Short Time ◽  
Critical Process ◽  
Tungsten Halogen Lamp ◽  
Halogen Lamps

ABSTRACTShort time anneal (STA) experiments were performed in a specially designed system which uses either a bank of Tungsten-Halogen lamps or a moving Mercury arc lamp as the light source. Both STA results were compared with conventional furnace anneal. The Mercury arc lamp anneal is found to be a critical process but optimization for wafer damage free conditions can be achieved. The anneals result in general in a better profile control which is most outspoken for shallow Boron implants while the electrical activation is comparable for all elements to that obtained with Tungsten-Halogen or furnace anneal.

Anneal Behavior of Zn Implanted InP : Furnace and Rapid Thermal Anneals

1987 ◽  
Vol 92 ◽  
Author(s):  
M. Djamei ◽  
E.V.K. Rao ◽  
P. Krauz
Keyword(s):  
Simple Model ◽  
Anomalous Diffusion ◽  
Rise Time ◽  
High Dose ◽  
Halogen Lamp ◽  
Conventional Furnace ◽  
Zn Distribution ◽  
Different Types ◽  
Short Time ◽  
Inp Substrates

ABSTRACTIt is shown here that high-dose Zn implants in semi-insulating InP substrates, after conventional furnace anneals lead to the following anomalies : step-like atomic Zn and carrier distributions and the presence of electrically inactive Zn at all depths of the profiles.Zn anneal behavior is compared using conventional furnace anneals, and two different types of short-time anneals ; rapid furnace anneals(RFA)at ∼750°C with a rise-time of ∼ 50 s, and halogen lamp rapid thermal anneals (RTA)also at ∼ 750°C with a rise-time of ∼ 4 s. We have established that the Zn anomalous diffusion is an instantaneous phexomenon occuring during annealing transients. Also, we have further shown that RTA would help to smooth carrier profiles by removing the step in carrier (but not in atomic Zn) distribution.The properties of differently Zn co-implanted layers (Zn plus P, Zn plus In and Zn plus As) after RTA, and of P or In implanted Zn doped InP substrates after different anneals,have been studied. We have shown that the presence of electrically inactive Zn in the depth of the layers is a consequence of interaction between Zn atoms and defects. A simple model based on the density of damage deposited in the layer during implant, has been proposed and discussed.

scholarly journals An assessment study of absorption effect: LED vs tungsten halogen lamp for noninvasive glucose detection

2015 ◽  
Vol 08 (02) ◽  
pp. 1550013
Author(s):  
Nur Ain Mohd Aziz ◽  
Norhana Arsad ◽  
P. Susthitha Menon ◽  
Sahbudin Shaari ◽  
Zalhan Md Yusof ◽  
...  
Keyword(s):  
Light Source ◽  
Glucose Concentration ◽  
Light Emitting Diode ◽  
Linear Trend ◽  
Glucose Monitoring ◽  
Glucose Detection ◽  
Halogen Lamp ◽  
Noninvasive Methods ◽  
Noninvasive Technique ◽  
Halogen Lamps

Noninvasive glucose monitoring development is critical for diabetic patient continuous monitoring. However, almost all the available devices are invasive and painful. Noninvasive methods such as using spectroscopy have shown some good results. Unfortunately, the drawback was that the tungsten halogen lamps usage that is impractical if applied on human skin. This paper compared the light emitting diode (LED) to traditional tungsten halogen lamps as light source for glucose detection where the type of light source plays an important role in achieving a good spectrum quality. Glucose concentration measurement has been developed as part of noninvasive technique using optical spectroscopy. Small change and overlapping in tungsten halogen results need to replace it with a more convenient light source such as LED. Based on the result obtained, the performance of LED for absorbance spectrum gives a significantly different and is directly proportional to the glucose concentration. The result shows a linear trend and successfully detects lowest at 60 to 160 mg/dL glucose concentration.

The tungsten halogen lamp decade

1970 ◽  
Vol 2 (2) ◽  
pp. 95-108 ◽  
Author(s):  
R. Burgin ◽  
E.F. Edwards
Keyword(s):  
Halogen Lamp ◽  
Tungsten Halogen Lamp

The Tungsten Halogen Lamp

2020 ◽  
pp. 75-91
Author(s):  
Steve Sirek ◽  
Raymond Kane
Keyword(s):  
Halogen Lamp ◽  
Tungsten Halogen Lamp

scholarly journals 6 nm super-resolution optical transmission and scattering spectroscopic imaging of carbon nanotubes using a nanometer-scale white light source

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xuezhi Ma ◽  
Qiushi Liu ◽  
Ning Yu ◽  
Da Xu ◽  
Sanggon Kim ◽  
...  
Keyword(s):  
Light Source ◽  
Hyperspectral Imaging ◽  
White Light ◽  
Optical Transmission ◽  
Super Resolution ◽  
Strain Engineering ◽  
Optical Methods ◽  
Material Research ◽  
Halogen Lamp ◽  
White Light Source

AbstractOptical transmission and scattering spectroscopic microscopy at the visible and adjacent wavelengths denote one of the most informative and inclusive characterization methods in material research. Unfortunately, restricted by the diffraction limit of light, it cannot resolve the nanoscale variation in light absorption and scattering, diagnostics of the local inhomogeneity in material structure and properties. Moreover, a large quantity of nanomaterials has anisotropic optical properties that are appealing yet hard to characterize through conventional optical methods. There is an increasing demand to extend the optical hyperspectral imaging into the nanometer length scale. In this work, we report a super-resolution hyperspectral imaging technique that uses a nanoscale white light source generated by superfocusing the light from a tungsten-halogen lamp to simultaneously obtain optical transmission and scattering spectroscopic images. A 6-nm spatial resolution in the visible to near-infrared wavelength regime (415–980 nm) is demonstrated on an individual single-walled carbon nanotube (SW-CNT). Both the longitudinal and transverse optical electronic transitions are measured, and the SW-CNT chiral indices can be identified. The band structure modulation in a SW-CNT through strain engineering is mapped.

A Comparison of Fluorescent and Nonfluorescent Light Sources for Phototherapy

PEDIATRICS ◽  
1980 ◽  
Vol 65 (4) ◽  
pp. 795-798 ◽  
Author(s):  
Joseph B. Warshaw ◽  
Jeryl Gagliardi ◽  
Anil Patel
Keyword(s):  
Serum Bilirubin ◽  
Newborn Infants ◽  
Radiant Flux ◽  
Light Sources ◽  
Halogen Lamp ◽  
The Mean ◽  
Additional Support ◽  
The Relationship ◽  
Tungsten Halogen Lamp ◽  
Practical Measure

We have compared fluorescent and nonfluorescent light sources for phototherapy for newborn infants with hyperbilirubinemia. Phototherapy was provided by a tungsten halogen lamp and conventional fluorescent lights with identical radiant flux of 6 µW/sq cm. For 22 infants treated with the nonfluorescent lamp the mean duration of phototherapy was 33.77 hours and the mean reduction of bilirubin was 3.84 mg/100 ml/day. This did not differ significantly from infants treated with conventional fluorescent lights. The nonfluorescent light can be utilized for infants in incubators or on radiant warmers. These results provide additional support for the relationship between radiant flux as a practical measure of phototherapy dose and the clinical response of a reduction in serum bilirubin.

Absolute Calibration of Laser-induced Breakdown Spectroscopy Detection System by Using a Tungsten Halogen Lamp

2018 ◽  
Vol 47 (8) ◽  
pp. 847003
Author(s):  
费腾 FEI Teng ◽  
潘从元 PAN Cong-yuan ◽  
曾强 ZENG Qiang ◽  
杜学维 DU Xue-wei ◽  
王秋平 WANG Qiu-ping
Keyword(s):  
Detection System ◽  
Laser Induced Breakdown Spectroscopy ◽  
Absolute Calibration ◽  
Halogen Lamp ◽  
Breakdown Spectroscopy ◽  
Laser Induced Breakdown ◽  
Tungsten Halogen Lamp

Study of “Reverse Annealing” of Boron Under Low Temperature Lamp Anneals

1985 ◽  
Vol 52 ◽  
Author(s):  
J. Huang ◽  
R. J. Jaccodine
Keyword(s):  
Annealing Temperature ◽  
Halogen Lamp ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Temperature Range ◽  
Silicon Crystals ◽  
Float Zone ◽  
Transmission Electron ◽  
Effect Of Oxygen ◽  
Tungsten Halogen Lamp

ABSTRACTThe reverse annealing of ion implanted boron, namely, the decrease in the concentration of electrically active boron as the isochronal annealing temperature increases, occurs in the temperature range from 550 to 650°C during conventional furnace heating. In this study, silicon crystals were boron implanted at 50 Kev to a dose of 1×1015 cm-2 followed by both furnace and tungsten-halogen lamp annealing in the reverse annealing temperature range. Cross-sectional Transmission electron microscopic (TEM) technique was used to examine the microstructural changes during annealing as a function of depth. Sheet resistance measurements gave a quick check of the electrical properties, while spreading resistance profiling with shallow angle lapping and Hall measurements reveals the mobility and carrier concentration as a function of depth. Czochralski and Float Zone crystals were studied to examine the effect of oxygen. Tungsten-halogen lamp thermal processing was found to have a more pronounced effect on the annealing of secondary defects than did furnace annealing. The reverse annealing of boron was eliminated completely for lamp annealing time as short as 60 seconds.

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