Switching Kinetics of Pulsed Laser Deposited Epitaxial PZT Films

1998 ◽  
Vol 526 ◽  
Author(s):  
M. Yamazato ◽  
A. M. Grishin ◽  
Y. Yamagata ◽  
T. Ikegami ◽  
K. Ebihara
Keyword(s):  
Electric Field ◽  
Domain Switching ◽  
Switching Time ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Pzt Films ◽  
Frequency Independent ◽  
Kinetics Of ◽  
Coercive Electric Field ◽  
Ferroelectric Switching

AbstractWe have fabricated epitaxial PbZr0.52Ti0.48O3 (PZT, 40~1200 nm)/YBa2Cu3O7-x (YBCO, 400 nm) film ferroelectric/superconductor heterostructures on the single-crystal neodymium doped yttrium monoaluminate [YAlO3+1%Nd2O3] and MgO substrates by KrF pulsed laser deposition technique. The dielectric constant of 950 and loss tangent δ of 0.04 have been found to be frequency independent in the range 100 Hz to 100 kHz while electric resistivity ρ (150 kV/cm) is of 6×1011 Ω·cm, remnant polarization and coercive field are 32 μC/cm2 and 43 kV/cm, respectively. Fast ferroelectric switching kinetics with characteristic switching time around 50 ns has been observed. Universal electric field and temperature dependencies of switching time as well as film thickness dependence of coercive electric field have been observed and correspond to ferroelectric needle-like domain switching.

Microstructure of Compositionally Graded PZT films Grown by Pulsed Laser Deposition

2008 ◽  
Vol 14 (S3) ◽  
pp. 53-56
Author(s):  
S.A.S. Rodrigues ◽  
A. Khodorov ◽  
M. Pereira ◽  
M.J.M. Gomes
Keyword(s):  
Pulsed Laser Deposition ◽  
Lead Zirconate Titanate ◽  
Film Growth ◽  
Pulsed Laser ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Laser Deposition ◽  
Composition Gradient ◽  
Complex Structures ◽  
Pzt Films

Ferroelectric films with a composition gradient have attracted much attention because of their large polarization offset present in the hysteresis loops. Lead Zirconate Titanate (PZT) films were deposited on Pt/TiO2/SiO2/Si substrates by Pulsed Laser Deposition (PLD) technique, using a Nd:YAG laser (Surelite) with a source pulse wavelength of 1064 nm and duration of 5-7 ns delivering an energy of 320 mJ per pulse and a laser fluence energy about 20 J/cm2. The film growth is performed in O2 atmosphere (0,40 mbar) while the substrate is heated at 600°C by a quartz lamp. Starting from ceramic targets based on PZT compositions and containing 5% mol. of excess of PbO to compensate the lead evaporation during heat treatment, three films with different compositions Zr/Ti 55/45, 65/35 and 92/8, and two types of complex structures were produced. These complex structures are in the case of the up-graded structure (UpG), with PZT (92/8) at the bottom, PZT (65/35) on middle and PZT (55/45) on the top, and for down-graded (DoG) one, that order is reversed.

Pulsed Laser Deposition of BaxSr1−xTiO3 Films on MgO, LaAlO3 and SrTiO3 for Tunable Microwave Applications

1998 ◽  
Vol 541 ◽  
Author(s):  
Wontae Chang ◽  
James S. Horwitz ◽  
Won-Jeong Kim ◽  
Jeffrey M. Pond ◽  
Steven W. Kirchoefer ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Electric Field ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Dielectric Constants ◽  
Laser Deposition ◽  
Film Stress ◽  
Donor Acceptor ◽  
Bst Films

AbstractSingle phase BaxSr1−xTiO3 (BST) films (∼0.5-7 μm thick) have been deposited onto single crystal substrates (MgO, LaAlO3, SrTiO3) by pulsed laser deposition. Silver interdigitated electrodes were deposited on top of the ferroelectric film. The room temperature capacitance and dielectric Q (1/tanδ) of the film have been measured as a function of electric field (≤80 kV/cm) at 1 - 20 GHz. The dielectric properties of the film are observed to strongly depend on substrate type and post-deposition processing. After annealing (≤1000° C), it was observed that the dielectric constant and % tuning decreased and the dielectric Q increased for films deposited onto MgO, and the opposite effect was observed for films deposited onto LaA1O3. Presumably, this change in dielectric properties is due to the changes in film stress. Very thin (∼50 Å) amorphous BST films were successfully used as a stress-relief layer for the subsequently deposited crystalline BST (∼5000 Å) films to maximize % tuning and dielectric Q. Films have been deposited from stoichiometric targets and targets that have excess Ba and Sr. The additional Ba and Sr has been added to the target to compensate for deficiencies in Ba and Sr observed in the deposited BST (x=0.5) films. Films deposited from compensated targets have higher dielectric constants than films deposited from stoichiometric targets. Donor/acceptor dopants have also been added to the BST target (Mn, W, Fe ≤4 mol.%) to further improve the dielectric properties. The relationship between the dielectric constant, the dielectric Q, the change in dielectric constant with electric field is discussed.

scholarly journals Oxygen in Complex Oxide Thin Films Grown by Pulsed Laser Deposition: a Perspective

2019 ◽  
Vol 33 (1) ◽  
pp. 205-212 ◽  
Author(s):  
Gertjan Koster ◽  
Dave H. A. Blank ◽  
Guus A. J. H. M. Rijnders
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Complex Oxide ◽  
Laser Deposition ◽  
Oxygen Stoichiometry ◽  
Oxide Thin Films ◽  
Film Synthesis ◽  
Kinetics Of ◽  
Oxidation Mechanisms

Abstract For thin film synthesis of complex oxides, one of the most important issues has always been how to oxidise the material. For a technique like pulsed laser deposition, a key benefit is the relatively high oxygen background pressure one can operate at, and therefor oxidation should be relatively straightforward. However, understanding the microscopic oxidation mechanisms turns out to be rather difficult. In this perspective, we give a brief overview of the sources of oxidation for complex oxide thin films grown by pulsed laser deposition. While it is clear what these sources are, their role in the kinetics of the formation of the crystal structure and oxygen stoichiometry is not fully understood.

Local ferroelectric switching properties in BiFeO3 microstructures and their piezomagnetic response

2005 ◽  
Vol 902 ◽  
Author(s):  
Catalin Harnagea ◽  
Cristian Victor Cojocaru ◽  
Alain Pignolet
Keyword(s):  
Magnetoelectric Effect ◽  
Pulsed Laser ◽  
Piezoresponse Force Microscopy ◽  
Laser Deposition ◽  
Lateral Size ◽  
Magnetic Domains ◽  
Force Microscopy ◽  
Ferroelectric Domains ◽  
First Results ◽  
Ferroelectric Switching

AbstractWe report here the successful fabrication of BiFeO3 (BFO) isolated micron-sized structures by pulsed laser deposition. The islands have a relatively constant aspect ratio (height/lateral size) of 0.1-0.3. We present their local ferroelectric characterization, using piezoresponse force microscopy (PFM), showing that the micron-sized BFO islands exhibit a strong piezoresponse and have ferroelectric domains with lateral sizes down to the 100 nm range. We also present here the first results of Magnetostriction Force Microscopy experiments performed on these structures. On ferromagnetic samples this method reveals a piezomagnetic or magnetostriction contrast, associated with magnetic domains. In our case, we show that the contrast can be associated to the magnetoelectric effect.

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