Real-Time X-Ray Scattering Study of Surface Dynamics on Au(111) During Ar+ Ion Irradiation

1998 ◽  
Vol 528 ◽  
Author(s):  
M.V. Ramana Murty ◽  
T. Curcic ◽  
A. Judy ◽  
B.H. Cooper ◽  
A.R. Woll ◽  
...  

AbstractX-ray scattering is used to investigate the surface dynamics on Au(111) during Ar+ ion irradiation. During 500 eV Ar+ ion irradiation, we observe the three regimes of step retraction, quasi-layer-by-layer removal and three dimensional rough erosion, analagous to molecular beam epitaxy. The quasi-layer-by-layer sputtering regime has been studied to identify similarities and differences in surface evolution during ion irradiation and molecular beam epitaxy. X-ray measurements suggest that 500 eV Ar+ ion irradiation does not lead to stable adatom island formation. Also, in contrast to molecular beam epitaxy, adatom detachment and diffusion seems important in describing the surface kinetics during ion irradiation.

2000 ◽  
Vol 647 ◽  
Author(s):  
O. Malis ◽  
J. M. Pomeroy ◽  
R. L. Headrick ◽  
J. D. Brock

AbstractThe sputter-erosion of hcp Co (0001) single crystal with Ar+ ions in the 100 to 700 eV energy range was investigated using in-situ time-resolved x-ray scattering. At temperatures above 300°C the surface remains relatively smooth, erosion evolving through a layer-by-layer or step flow mechanism. In this regime the ions have a smoothening effect on the surface and the resulting roughness decreases with increasing ion energy. Below 300°C the surface develops a pattern of mounds or pits with a characteristic wavelength. The time, ion energy and temperature dependence of this wavelength were studied in detail. Epitaxial Co thin films thermally evaporated on sapphire were also sputtered through in order to synthesize self-assembled arrays of Co nanoclusters with a narrow size distribution. The degree of local order within the Co dot arrays was examined using atomic force microscopy.


2006 ◽  
Vol 21 (2) ◽  
pp. 122-124
Author(s):  
I. Busch ◽  
J. Stümpel ◽  
M. Krumrey

In this study, the effects of growth interruptions on the formation of the interfaces in GaAs∕AlAs multilayers are investigated. For that purpose, a series of different samples has been manufactured with molecular-beam epitaxy. The introduction of growth interruptions of 50 s after the deposition of the layer leads to a change in the morphological properties of the interfaces, in particular their correlation length. These modifications due to the growth interrupt are analyzed with diffuse X-ray scattering. As a result of the measurements, an extension of the lateral correlation length can be proved. By contrast, the vertical correlation of the interfaces is not affected.


2011 ◽  
Vol 110 (10) ◽  
pp. 102204 ◽  
Author(s):  
M. Sharma ◽  
M. K. Sanyal ◽  
M. K. Mukhopadhyay ◽  
M. K. Bera ◽  
B. Saha ◽  
...  

1996 ◽  
Vol 35 (Part 2, No. 10A) ◽  
pp. L1311-L1313
Author(s):  
Yoshifumi Suzuki ◽  
Yoshinori Chikaura ◽  
Hideki Kii

2012 ◽  
Vol 82 ◽  
pp. 570-575 ◽  
Author(s):  
Hoydoo You ◽  
Michael Pierce ◽  
Vladimir Komanicky ◽  
Andi Barbour ◽  
Chenhui Zhu

2004 ◽  
Vol 37 (5) ◽  
pp. 757-765 ◽  
Author(s):  
L. E. Levine ◽  
G. G. Long

A new transmission X-ray imaging technique using ultra-small-angle X-ray scattering (USAXS) as a contrast mechanism is described. USAXS imaging can sometimes provide contrast in cases where radiography and phase-contrast imaging are unsuccessful. Images produced at different scattering vectors highlight different microstructural features within the same sample volume. When used in conjunction with USAXS scans, USAXS imaging provides substantial quantitative and qualitative three-dimensional information on the sizes, shapes and spatial arrangements of the scattering objects. The imaging technique is demonstrated on metal and biological samples.


1998 ◽  
Vol 80 (21) ◽  
pp. 4713-4716 ◽  
Author(s):  
M. V. Ramana Murty ◽  
T. Curcic ◽  
A. Judy ◽  
B. H. Cooper ◽  
A. R. Woll ◽  
...  

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