Noncrucial Role of the Defects in the Splitting for Hydrogen Implanted Silicon With High Boron Concentration

1998 ◽  
Vol 540 ◽  
Author(s):  
V.P. Popov ◽  
V.F. Stas ◽  
I.V. Antonova
Keyword(s):  
Structural Properties ◽  
Boron Concentration ◽  
Local Stress ◽  
Gas Pressure ◽  
Boron Doped ◽  
Doped Silicon ◽  
High Boron

AbstractThe present work deals with the investigation of the electrical and structural properties of heavily boron-doped silicon irradiated by hydrogen. Blistering and splitting processes are enhanced with an increase in boron concentration in the crystal. The measured values of perpendicular strain are over 0.7% which corresponds to a gas overpressure of 0.5 GPa. Processes which lead to blistering and splitting is better described in the frame of a gas pressure model than a model of local stress caused by the defects.

New insights about boron species in acidic digestion solutions of boron doped silicon

2021 ◽  
Author(s):  
Anja Rietig ◽  
Hans-Joachim Grafe ◽  
Jörg Acker
Keyword(s):  
Boron Concentration ◽  
Systematic Investigation ◽  
Precise Determination ◽  
Boron Doped ◽  
Doped Silicon

The exact and precise determination of the boron concentration in silicon is still a challenge. A systematic investigation dealing with digenstions of 60 silicion samples with HF-HNO3 an subsequent boron...

Extraction of Elastic Parameters of Heavily Boron-Doped Silicon Layer by Elimination of Misfit Dislocations

1995 ◽  
Vol 378 ◽  
Author(s):  
HO-JUN Lee ◽  
Chul-Hi Han ◽  
Choong-Ki Kim
Keyword(s):  
Young’S Modulus ◽  
Boron Concentration ◽  
Young's Modulus ◽  
Silicon Layer ◽  
Misfit Dislocations ◽  
Residual Tensile Stress ◽  
X Ray Diffraction ◽  
Elastic Parameters ◽  
Boron Doped ◽  
Doped Silicon

AbstractIn this paper, various elastic parameters of heavily boron-doped silicon layer have been extracted by eliminating the misfit dislocations in the layer. The dislocation-free silicon membranes doped with the boron concentration of 1.3 × 1020 atoms/cm3 have been fabricated and the Young’s modulus of 1.45 × 1012 dyn/cm2 and residual tensile stress of 2.7 × 109 dyn/cm2 have been extracted by blister method. From the Young’s modulus and residual stress, the residual tensile strain of 1.34 × 10−3, lattice constant of 5.424 Å, and misfit coefficient of 1.03 × 10−23 cm3/atom have been calculated. These parameters are very similar to those obtained from X-ray diffraction analysis and theory.

Ion blistering of boron-doped silicon: The critical role of defect passivation

2005 ◽  
Vol 87 (23) ◽  
pp. 231908 ◽  
Author(s):  
N. Desrosiers ◽  
A. Giguère ◽  
O. Moutanabbir ◽  
B. Terreault
Keyword(s):  
Critical Role ◽  
Boron Doped ◽  
Defect Passivation ◽  
Doped Silicon

scholarly journals Role of aluminum in silver paste contact to boron-doped silicon emitters

AIP Advances ◽  
2017 ◽  
Vol 7 (1) ◽  
pp. 015306 ◽  
Author(s):  
Wei Wu ◽  
Katherine E. Roelofs ◽  
Shekhar Subramoney ◽  
Kathryn Lloyd ◽  
Lei Zhang
Keyword(s):  
Silver Paste ◽  
Boron Doped ◽  
Doped Silicon

Enhanced Oxygen Precipitation during the Czochralski Crystal Growth

2007 ◽  
Vol 131-133 ◽  
pp. 167-174 ◽  
Author(s):  
Lukas Válek ◽  
Jan Šik ◽  
David Lysáček
Keyword(s):  
Crystal Growth ◽  
Vacancy Concentration ◽  
Stacking Faults ◽  
Czochralski Crystal Growth ◽  
Oxygen Precipitation ◽  
Large Size ◽  
Boron Doped ◽  
Doped Silicon ◽  
High Boron ◽  
Oxygen Precipitates

An unusual pattern of the Oxidation Induced Stacking Faults (OISF) in the heavily boron-doped silicon is reported. Instead of the commonly reported simple OISF ring, we observe a banded OISF pattern. The pattern reflects the distribution of residual vacancies as it is described by Voronkov and Falster [J. Crystal Growth 204 (1999) 462]. We show that the oxygen precipitates in the L- and H- bands grow to an abnormally large size during the crystal growth and which serve as the OISF nuclei during subsequent wafer oxidation. It is concluded that a combination of the high boron, oxygen and vacancy concentration is responsible for the enhanced oxygen precipitation during the crystal growth.

Dopant Mapping and Strain Analysis in B Doped Silicon Structures Using Micro-Raman Spectroscopy

1998 ◽  
Vol 518 ◽  
Author(s):  
M. Bowden ◽  
D. J. Gardiner ◽  
M. A. Lourengo ◽  
J. Hedley ◽  
D. Wood ◽  
...  
Keyword(s):  
Lattice Strain ◽  
Boron Concentration ◽  
Strain Analysis ◽  
Peak Frequency ◽  
Raman Shift ◽  
Boron Doped ◽  
Doped Silicon ◽  
Phonon Peak ◽  
Silicon Structures ◽  
Different Sources

AbstractRaman microscopy, using a novel line focus configuration, has been used here to study boron concentration distributions and depth profiles in silicon for two different sources of dopant. Changes in the Raman phonon peak frequency for boron doped silicon have been calibrated against concentration by comparison with SIMS data and a relationship between Raman shift and lattice strain has been obtained.

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