Colloidal Cu-Zn-Sn-Te Nanocrystals: Aqueous Synthesis and Raman Spectroscopy Study

Cu-Zn-Sn-Te (CZTTe) is an inexpensive quaternary semiconductor that has not been investigated so far, unlike its intensively studied CZTS and CZTSe counterparts, although it may potentially have desirable properties for solar energy conversion, thermoelectric, and other applications. Here, we report on the synthesis of CZTTe nanocrystals (NCs) via an original low-cost, low-temperature colloidal synthesis in water, using a small-molecule stabilizer, thioglycolic acid. The absorption edge at about 0.8–0.9 eV agrees well with the value expected for Cu2ZnSnTe4, thus suggesting CZTTe to be an affordable alternative for IR photodetectors and solar cells. As the main method of structural characterization multi-wavelength resonant Raman spectroscopy was used complemented by TEM, XRD, XPS as well as UV-vis and IR absorption spectroscopy. The experimental study is supported by first principles density functional calculations of the electronic structure and phonon spectra. Even though the composition of NCs exhibits a noticeable deviation from the Cu2ZnSnTe4 stoichiometry, a common feature of multinary NCs synthesized in water, the Raman spectra reveal very small widths of the main phonon peak and also multi-phonon scattering processes up to the fourth order. These factors imply a very good crystallinity of the NCs, which is further confirmed by high-resolution TEM.

Changes in the phonon density of states of Fe induced by external strain

Nuclear inelastic scattering of synchrotron radiation is used to study the changes induced by external tensile strain on the phonon density of states (pDOS) of polycrystalline Fe samples. The data are interpreted with the help of dedicated atomistic simulations. The longitudinal phonon peak at around 37 meV and also the second transverse peak at 27 meV are decreased under strain. This is caused by the production of defects under strain. Also the thermodynamic properties of the pDOS demonstrate a weakening of the force constants and of the mean phonon energy under strain. Remaining differences between experiment and simulation are discussed.

Visible Light-Emitting Hydrogenated Nanocrystalline Silicon-on-Insulator Films: Formation and Properties

Hydrogenated Si nanocrystals were performed by high-dose (51017 cm-2) low-energy (24 keV) H+ ion implantation of silicon-on-insulator (SOI) layers. The formation of the nanocrystalline phase was observed in the as-implanted samples and in those annealed at the temperature of 200-400o C. Both the Raman shift and the broadening of the phonon peak corresponded to Si nanocrystals with the diameters ranging from ~2 to ~3 nm. The room-temperature photoluminescence (PL) peaked at 1.58 - 1.64 eV was observed at room temperature. The PL peak energy corresponded to the energy of quantum confined exciton in the Si nanocrystals with the diameters mentioned above. The PL intensity had the bell-shaped dependence on the measurement temperature and had its maximum near 150 K. The estimated thermal activation energy of the PL was about 12.1 meV and was in good accordance with the singlet-triplet splitting energy of the exciton states.

Raman Scattering Study of Stress Distribution around Dislocation in SiC

We have presented a combined method of microscopic measurements between Raman scattering and polarizing optical microscope to characterize inhomogeneous residual stress distributions around dislocations in 4H- and 6H-SiC wafers. First, stressed portions were found in wafers by an optical polarizing microscope under a crossed Nicole arrangement. Then, the portions were examined by Raman-imaging technique for lateral variations of phonon spectra. The residual stresses were quantified from the phonon-peak frequency shift using a known frequency-shift rate for 6H-SiC. Characterization to the depth direction was also conducted by surface etching with molten KOH. The stresses typically amounted to the order of 100 MPa. In a 4H-SiC homoepitaxial wafer sample, we observed threading dislocations transferred from the substrate to the epitaxial layer, and found that larger stress fields existed in the epitaxial layer than the substrate. We also observed stress distributions around compressively stressed sub-grain boundaries.

Phonon Confinement and Impurity Doping in Silicon Nanowires Synthesized by Laser Ablation

The effect of phonon confinement and impurity doping in silicon nanowires (SiNWs) synthesized by laser ablation were investigated. The diameter of SiNWs was controlled by the synthesis parameters during laser ablation and the subsequent thermal oxidation. Thermal oxidation increases the thickness of the SiNWs’ surface oxide layer, resulting in a decrease in their crystalline Si core diameter. This effect causes a downshift and asymmetric broadening of the Si optical phonon peak due to phonon confinement. Boron doping was also performed during the growth of SiNWs. Local vibrational modes of boron (B) in silicon nanowires (SiNWs) synthesized by laser ablation were observed at about 618 and 640 cm–1 by Raman scattering measurements. Fano broadening due to coupling between discrete optical phonons and the continuum of interband hole excitations was also observed in the Si optical phonon peak. These results prove that B atoms were doped in the SiNWs.

Raman Characterization of Silicon Nanoclusters Embedded in Fused Silica

ABSTRACTSilicon nanocrystals (Si-nc) and amorphous silicon (a–Si) aggregates either produced by silicon implantation in fused silica have been studied by micro-Raman spectroscopy. Under certain experimental conditions, relevant information regarding both the dimension and the size distribution of Si-nc can be extracted from the energy shifts and the spectral distortion of the phonon excitation observed near 520 cm−1. Results are presented for different sample annealing times and ion fluences. These data agree with the direct observation by TEM of non-uniformly depth-distributed silicon nanocrystals. Moreover, measurements recorded for different Raman probing depths give evidence of chemical composition changes within the fused silica matrix. The depth evolution of the phonon peak associated with the Raman signature of a-Si near 470 cm−1 shows the presence of amorphous silicon, whose concentration is higher in the region where the large Si-nc are located.

Carrier Doping of Silicon Nanowires Synthesized by Laser Ablation

ABSTRACTBoron (B) doped silicon nanowires (SiNWs) were synthesized by laser ablation. Local vibrational modes of B in SiNWs were observed by micro-Raman scattering measurements at room temperature. Broadening due to a coupling between the discrete optical phonon and a continuum of interband hole excitations was also observed in the Si optical phonon peak. This is called Fano broadening. These results prove that B atoms were doped in substitutional sites of crystalline Si core of SiNWs during laser ablation.