Optical Properties of Sol-Gel Derived PbTiO3 and PbZr1−xTiO3 Ferroelectric Thin Films

AbstractWith sol-gel processing and rapid thermal annealing (RTA), crack-free PbTiO3 and PbZr1−xTixO3(x=0.2-0.8) ferroelectric thin films were prepared on Si(100) and Pt/Ti/SiO2/Si(100) substrates respectively. Results from x-ray diffraction (XRD) show that the films are single perovskite phase structure. Scanning electron microscopy (SEM) was used to determine the grain sizes of the thin films. Energy dispersive spectroscopy (EDS) of x rays was used to analyze the composition of the films. From infrared reflection spectroscopy in the wavelength region of 40-700 cm−1 at 300K, the vibrational mode frequencies in PbTiO3 thin films on silicon substrates were obtained at the wavenumbers of 79, 155, 206, 298, 344, 461, 520 and 621 cm−1. Among these phonon modes, the modes at 298 and 461 cm−1 have not been reported before. The infrared optical constants and the thickness of PZT thin films on Pt/Ti/SiO2/Si(100) substrates were directly measured in the wavelength region of 2-12μm by an automatic wavelength swept infrared spectroscopic ellipsometer. These constants include: refractive index (n), extinction coefficient (k), thickness of the films and absorption coefficient (α). Possible correlation among the processing, microstructure and optical properties of the thin films were discussed.

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Optical Properties of Nanostructured Zinc Oxides Deposited on Silicon Substrates

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.312-315.1132 ◽

2011 ◽

Vol 312-315 ◽

pp. 1132-1136 ◽

Cited By ~ 4

Author(s):

Mohamad Hafiz Mamat ◽

Zuraida Khusaimi ◽

Mohamad Mahmood Rusop

Keyword(s):

Thin Films ◽

Optical Properties ◽

Spin Coating ◽

Sol Gel ◽

Zno Thin Films ◽

Silicon Substrates ◽

Annealing Temperatures ◽

Uv Emission ◽

Zinc Oxides ◽

Optically Transparent

Nanostructured zinc oxide (ZnO) thin films were prepared through sol-gel method and spin-coating technique. ZnO thin films then were annealed at temperature of 350°C, 400°C, 450°C and 500°C. The thin films were characterized using field emission scanning electron microscope (FESEM), UV-VIS-NIR spectrophotometer and photoluminescence (PL) spectrofluorometer for morphology and optical properties study. The morphology study indicates that the particle size of ZnO increased with annealing temperatures. All thin films are optically transparent (~ 80 % in transmittance) in the visible light-NIR region. PL spectra reveal improved UV emission with annealing temperatures up to 500°C.

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Study of the structure, optical properties, surface morphology and topology of ZnO thin films grown by sol–gel on silicon substrates

Materials Research Express ◽

10.1088/2053-1591/1/3/036404 ◽

2014 ◽

Vol 1 (3) ◽

pp. 036404 ◽

Cited By ~ 1

Author(s):

J G Quiñones-Galván ◽

H Tototzintle-Huitle ◽

L A Hernández-Hernández ◽

J S Arias-Cerón ◽

F de Moure-Flores ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Surface Morphology ◽

Sol Gel ◽

Zno Thin Films ◽

Silicon Substrates ◽

And Topology

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Ferroelectric Thin Films by sol-gel Processing

MRS Proceedings ◽

10.1557/proc-152-227 ◽

1989 ◽

Vol 152 ◽

Cited By ~ 23

Author(s):

S. L. Swartz ◽

P. J. Melling ◽

C. S. Grant

Keyword(s):

Thin Films ◽

Single Crystal ◽

Sol Gel ◽

Fused Silica ◽

Ferroelectric Materials ◽

Ferroelectric Thin Films ◽

Silicon Substrates ◽

Heat Treated ◽

Pzt Films ◽

Gel Processing

ABSTRACTThe sol-gel processing of ferroelectric thin films is being investigated at Battelle. The ferroelectric materials included in this study are PbTiO3, Pb(Zr, Ti)O3 (PZT), and KNbO3. The sol-gel processing and crystallization of these films on fused silica, silicon, alumina, and single crystal SrTiO3 substrates is described.Sol-gel derived PbTiO3 thin films crystallized into the expected tetragonal perovskite structure when heated to 500 C and above. However, the crystallization of sol-gel PZT (20/80) thin films was found to be substratedependent. The heat-treated PZT films were amorphous when deposited on silica and silicon substrates. Crystalline perovskite PZT films were produced on alumina substrates, and epitaxial PZT films were produced on single-crystal SrTiO3. Heat treatment of sol-gel KNbO3 films on silicon and alumina substrates resulted in the crystallization of a variety of non-perovskite phases, but epitaxial growth of KNbO3 was observed on single crystal SrTiO3.

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Optical and electro-optical properties of sol-gel derived ferroelectric thin films

Integrated Ferroelectrics ◽

10.1080/10584589808238764 ◽

1998 ◽

Vol 20 (1-4) ◽

pp. 39-54 ◽

Cited By ~ 5

Author(s):

G. Teowee ◽

J. M. Boulton ◽

D. R. Uhlmann

Keyword(s):

Thin Films ◽

Optical Properties ◽

Sol Gel ◽

Ferroelectric Thin Films

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Ferroelectric thin films with complex composition of PNN–PZN–PMN–PZ–PT and excess NiO

Journal of Materials Research ◽

10.1557/jmr.2008.0067 ◽

2008 ◽

Vol 23 (2) ◽

pp. 536-542 ◽

Cited By ~ 1

Author(s):

Phoi Chin Goh ◽

Kui Yao ◽

Zhong Chen

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Perovskite Phase ◽

Sol Gel ◽

Pyrochlore Phase ◽

Oxide System ◽

Ferroelectric Thin Films ◽

Ionic Radii ◽

Pt Complex ◽

The Stability

Ferroelectric thin films of the 0.1Pb(Ni1/3Nb2/3)O3–0.35Pb(Zn1/3Nb2/3)O3–0.15Pb (Mg1/3Nb2/3)O3–0.1PbZrO3–0.3PbTiO3 (PNN–PZN–PMN–PZ–PT) complex oxide system were prepared on Pt/Ti/SiO2/Si substrates using a polymer-modified sol-gel method followed by a rapid thermal annealing (RTA) process. It was found that the addition of excess NiO is effective in stabilizing the perovskite phase while suppressing the pyrochlore phase. The crystalline structure and morphology of the films with different amounts of access NiO were studied with x-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM), respectively. The electrical properties, including dielectric, ferroelectric, and piezoelectric, showed a significant improvement with excess NiO. The film sample with 3 mol% of excess NiO exhibited optimized electrical properties. Different parameters, including tolerance factors on the basis of ionic radii, electronegativity differences between cations and anions, and oxygen bond valences, were applied to analyze the stability of the perovskite phase with different amount of excess NiO. Analysis results indicated that only the bond-valence theory could explain the effect of excess NiO on the stability of the perovskite phase under the assumption that the excess Ni2+ entered the A sites of the perovskite structure.

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Effect of polyvinylpyrrolidone on the formation of perovskite phase and rosette-like structure in sol-gel–derived PLZT films

Journal of Materials Research ◽

10.1557/jmr.2007.0283 ◽

2007 ◽

Vol 22 (8) ◽

pp. 2195-2203 ◽

Cited By ~ 11

Author(s):

Z.H. Du ◽

T.S. Zhang ◽

J. Ma

Keyword(s):

Thin Films ◽

Optical Properties ◽

Phase Formation ◽

Crystallization Behavior ◽

Perovskite Phase ◽

Sol Gel ◽

Microstructural Development ◽

Electrical And Optical Properties ◽

Molecular Weights ◽

Gel Particles

Poly-vinylpyrrolidones (PVP) with different molecular weights were used to modify the sol-gel solutions for preparing Pb0.91La0.09(Zr0.65,Ti0.35)0.9775O3 (PLZT, 9/65/35) thin films. The crystallization behavior and microstructural development of the PLZT films with and without PVP addition were investigated. It was found that the addition of PVP significantly improved perovskite phase formation of the PLZT films, but the films exhibited rosette-like morphology. Further study on the PLZT films and the gel particles showed that a premature nucleation of PbO grains in the PVP modified sol-gel solution induced the Pb-rich domains in the films, which accelerated the growth of the grains and thus led to the rosette-like structure. In addition, the electrical and optical properties of the PLZT films with rosette-like structure were also studied and discussed.

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Optical properties of BaTiO3 and Mn:BaTiO3 thin films deposited on fused quartz and silicon substrates using a sol-gel method

10.1117/12.607556 ◽

2004 ◽

Author(s):

Yawei Li ◽

Jing-Lan Sun ◽

Xiangjian Meng ◽

Weifeng Zhang ◽

Jun-Hao Chu

Keyword(s):

Thin Films ◽

Optical Properties ◽

Sol Gel ◽

Silicon Substrates ◽

Gel Method ◽

Sol Gel Method ◽

Fused Quartz

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Epitaxial Growth of Ferroelectric Pb(Mgl/3Nb2/3)03 Film by Sol-Gel Method

MRS Proceedings ◽

10.1557/proc-204-557 ◽

1990 ◽

Vol 204 ◽

Cited By ~ 3

Author(s):

Kumi Okuwada ◽

Shin-Ichi Nakamura ◽

Motomasa Imai ◽

Keiichi Kakuno

Keyword(s):

Thin Films ◽

Epitaxial Growth ◽

Growth Process ◽

Perovskite Phase ◽

Sol Gel ◽

Preferred Orientation ◽

Ferroelectric Thin Films ◽

Metal Alkoxides ◽

Gel Method ◽

Sol Gel Method

ABSTRACTFerroelectric thin films, which are Pb(Mgl/3Nb2/3)03 (PMN) and Pb(Mgl/3Nb2/3)03 - PbTiO3 (PMN-PT) in the perovskite phase, were obtained by the sol-gel method with metal alkoxides. The films had highly preferred orientation on substrates whose interplanar spacings are close to that for the perovskite structures in PMN and PMN-PT. Epitaxial growth process in PMN film was investigated.

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