scholarly journals Micrometer-scale machining of metals and polymers enabled by focused ion beam sputtering

1998 ◽  
Vol 546 ◽  
Author(s):  
D. P. Adams ◽  
G. L. Benavides ◽  
M. J. vasile
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
End Mills ◽  
Ultra Precision ◽  
Tool Shank ◽  
Micrometer Scale ◽  
Tool Cutting ◽  
Micro Tools

AbstractThis work combines focused ion beam sputtering and ultra-precision machining for microfabrication of metal alloys and polymers. Specifically, micro-end mills are made by Ga ion beam sputtering of a cylindrical tool shank. Using an ion energy of 20keV, the focused beam defines the tool cutting edges that have submicrometer radii of curvature. We demonstrate 25μm diameter micromilling tools having 2, 4 and 5 cutting edges. These tools fabricate fine channels, 26–28 microns wide, in 6061 aluminum, brass, and polymethyl methacrylate. Micro-tools are structurally robust and operate for more than 5 hours without fracture.

High Resolution FIB as a General Materials Science Tool

1998 ◽  
Vol 4 (S2) ◽  
pp. 492-493 ◽  
Author(s):  
M.W. Phaneuf ◽  
J. Li ◽  
T. Malis
Keyword(s):  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Materials Science ◽  
Ion Beam ◽  
General Purpose ◽  
Ion Source ◽  
Specimen Preparation ◽  
Ion Beam Sputtering ◽  
Imaging Characteristics ◽  
Beam Sputtering

Focused Ion Beam or FIB systems have been used in integrated circuit production for some time. The ability to combine rapid, precision focused ion beam sputtering or gas-assisted ion etching with focused ion beam deposition allows for rapid-prototyping of circuit modifications and failure analysis of defects even if they are buried deep within the chip's architecture. Inevitably, creative TEM researchers reasoned that a FIB could be used to produce site specific parallel-sided, electron transparent regions, thus bringing about the rather unique situation wherein the specimen preparation device often was worth as much as the TEM itself.More recently, FIB manufacturers have concentrated on improving the resolution and imaging characteristics of these instruments, resulting in a more general-purpose characterization tool. The Micrion 2500 FIB system used in this study is capable of 4 nm imaging resolution using either secondary electron or secondary ions, both generated by a 50 kV liquid metal gallium ion source.

scholarly journals Двухрешетчатые магнитоплазмонные структуры на основе BIG  и перфорированных пленок золота

2019 ◽  
Vol 61 (9) ◽  
pp. 1706
Author(s):  
П.Н. Найденов ◽  
А.Л. Чехов ◽  
О.Л. Голикова ◽  
А.В. Беспалов ◽  
А.А. Гераськин ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Diffusion Processes ◽  
Ion Beam ◽  
Gold Films ◽  
Ion Beam Sputtering ◽  
Adhesive Properties ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Magneto Optical Effect ◽  
Ta2o5 Layer

A method for the synthesis of magnetoplasmonic crystals containing two Ag gratings with the structure (Au / BIG) 2, in which the plasmon lattices of gold are displaced relative to each other by half the period, is presented. Gold films with a thickness of about 40 nm are formed by the method of ion-beam sputtering – deposition, and the adhesive properties of the film make it possible to carry out dimensional etching with a sharply focused ion beam. It was shown that the synthesis of the second plasmon lattice located above the garnet layer of 100 nm thick, preserves the periodicity of the first Au lattice, however a significant influence of the diffusion processes on the lower Au lattice is observed, which leads to a decrease in its density. The dependence of the transmission magneto-optical effect on the thickness of the upper lattice and the presence of an encapsulating Ta2O5 layer is investigated

Characteristics of submicron patterns fabricated by gallium focused‐ion‐beam sputtering

1985 ◽  
Vol 57 (1) ◽  
pp. 159-160 ◽  
Author(s):  
H. Morimoto ◽  
Y. Sasaki ◽  
Y. Watakabe ◽  
T. Kato
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

scholarly journals 3-D SRIM Simulation of Focused Ion Beam Sputtering with an Application-Oriented Incident Beam Model

2019 ◽  
Vol 9 (23) ◽  
pp. 5133 ◽  
Author(s):  
Lirong Zhao ◽  
Yimin Cui ◽  
Wenping Li ◽  
Wajid Ali Khan ◽  
Yutian Ma
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Incident Beam ◽  
Coulomb Repulsion ◽  
Ion Source ◽  
Material Surface ◽  
Thermal Source ◽  
Beam Model ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Ion beam sputter etching has been widely used in material surface modification and transmission electron microscope (TEM) sample preparation. Due to the complexity of the ion beam etching process, the quantitative simulation of ion beam sputtering is necessary to guarantee precision in surface treatment and sculpting under different energies and beam currents. In this paper, an application-oriented incident ion beam model was first built with aberrations and Coulomb repulsion forces being considered from the Ga ion source to the sample. The sputtering process of this model on the sample was then analyzed and simulated with an improved stopping and range of ions in matter (SRIM) program. The sputtering performance of this model, the point-like incident beam and the typical Gaussian incident beam was given in the end. Results show that the penetration depth of Ga ions having 30 keV energy in silicon is 28 nm and the radial range is 29.6 nm with 50 pA beam current. The application-oriented model has been verified by our focused ion beam-scanning electron microscopy (FIB-SEM) milling experiment and it will be a potential thermal source in simulating the process of FIB bombarding organic samples.

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