A New Method to Characterize TCO/P Contact Resistance in a-SI Solar Cells

1999 ◽  
Vol 557 ◽  
Author(s):  
Steven S. Hegedus ◽  
Michael Gibson ◽  
Gautam Ganguly ◽  
Rajeewa Arya
Keyword(s):  
Solar Cells ◽  
Contact Resistance ◽  
Sheet Resistance ◽  
New Method ◽  
Straightforward Manner ◽  
Si Solar Cells

AbstractA method is presented to characterize the TCO/p contact and the TCO sheet resistance in a-Si based p-i-n superstrate devices. It requires having scribed TCO strips, which are electrically isolated before a-Si deposition, then fabricating rows of individual devices on each strip. Analysis of 4-terminal measurements in different V-sensing configurations yields the TCO/p contact and TCO sheet resistance in a straightforward manner. The method is applied to devices fabricated on 3 brands of commercial SnO2 substrates. The TCO/p contact resistance is found to be ~2 Ω-cm2 and the sheet resistance decreases by 2-4 Ω/sq after a-Si deposition on all 3 brands of SnO2 substrates.

scholarly journals Application Examples for the Different Measurement Modes of Electrical Properties of the Solar Cells

2014 ◽  
Vol 59 (1) ◽  
pp. 247-252 ◽  
Author(s):  
M. Musztyfaga-Staszuk ◽  
L.A. Dobrzanski ◽  
S. Rusz ◽  
M. Staszuk
Keyword(s):  
Solar Cells ◽  
Electrical Properties ◽  
Contact Resistance ◽  
Sheet Resistance ◽  
Cross Sections ◽  
Standard Technique ◽  
Photovoltaic Cell ◽  
Metal Resistance ◽  
Silicon Wafers ◽  
Formation Technique

Abstract The aim of the paper was to apply the newly developed instruments ‘Corescan’ and ‘Sherescan’ in order to measure the essential parameters of producing solar cells in comparison with the standard techniques. The standard technique named the Transmission Line Method (TLM) is one way to monitor contacting process to measure contact resistance locally between the substrate and metallization. Nowadays, contact resistance is measured over the whole photovoltaic cell using Corescanner instrument. The Sherescan device in comparison with standard devices gives a possibility to measure the sheet resistance of the emitter of silicon wafers and determine of both P/N recognition and metal resistance. The Screen Printing (SP) method is the most widely used contact formation technique for commercial silicon solar cells. The contact resistance of manufactured front metallization depends of both the paste composition and co-firing conditions. Screen printed front side metallization and next to co-fired in the infrared conveyor furnace was carried out at various temperature from 770°C to 920°C. The silver paste used in the present paper is commercial. The investigations were carried out on monocrystalline silicon wafers. The topography of co-fired in the infrared belt furnace front metallization was investigated using the atomic force microscope and scanning electron microscope (SEM). There were researched also cross sections of front contacts using SEM microscope. Front contacts of the solar cells were formed on non-textured silicon surface with coated antireflection layer. On one hand, based on electrical properties investigations using Sherescan instrument it was obtained the knowledge of the emitter sheet resistance across the surface of a wafer, what is essential in optimizing the emitter diffusion process. On the other hand, it was found using Corescan instrument that the higher temperature apparently results in a strongly decreased contact resistance.

Effect of doping profile on sheet resistance and contact resistance of monocrystalline silicon solar cells

2019 ◽  
Vol 6 (8) ◽  
pp. 085510 ◽  
Author(s):  
M K Basher ◽  
M Jalal Uddin ◽  
M Khalid Hossain ◽  
M A R Akand ◽  
S Biswas ◽  
...  
Keyword(s):  
Solar Cells ◽  
Contact Resistance ◽  
Sheet Resistance ◽  
Monocrystalline Silicon ◽  
Doping Profile ◽  
Silicon Solar Cells ◽  
Effect Of Doping

Novel Ag-doped glass frits for high-efficiency crystalline silicon solar cells

2017 ◽  
Vol 53 (46) ◽  
pp. 6239-6242 ◽  
Author(s):  
Sheng Yuan ◽  
Yongji Chen ◽  
Zongwei Mei ◽  
Ming-Jian Zhang ◽  
Zhou Gao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Contact Resistance ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Silicon Solar Cells ◽  
Crystalline Silicon Solar Cells ◽  
Si Solar Cells ◽  
Doped Glass

Novel Ag-doped glass frits remarkably improved the interface between bulk Ag and n-Si, which greatly reduced the contact resistance of c-Si solar cells.

Gas Immersion Laser Diffusion: A New Method for Making Efficient Si Solar Cells

1982 ◽  
pp. 427-431
Author(s):  
G. B. Turner ◽  
D. Tarrant ◽  
D. Aldrich ◽  
R. Pressley ◽  
R. Press
Keyword(s):  
Solar Cells ◽  
New Method ◽  
Si Solar Cells

High sheet resistance emitter c-Si solar cells with low SRV by local line contact with transparent conducting oxides

2014 ◽  
Vol 116 ◽  
pp. 258-261 ◽  
Author(s):  
Mingeon Kim ◽  
Joondong Kim ◽  
Youn-Jung Lee ◽  
Minkyu Ju ◽  
Cheolmin Park ◽  
...  
Keyword(s):  
Solar Cells ◽  
Sheet Resistance ◽  
Transparent Conducting Oxides ◽  
Line Contact ◽  
Conducting Oxides ◽  
Transparent Conducting ◽  
Si Solar Cells
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