Fabricating high efficiency solar cells with high sheet resistance emitters by ion implantation and contact resistance modeling

2013 ◽  
Author(s):  
Vikram Bhosle ◽  
Basil Tsefrekas ◽  
Hans-Joachim L. Gossmann ◽  
Christopher E. Dube
Keyword(s):  
Solar Cells ◽  
Ion Implantation ◽  
Contact Resistance ◽  
Sheet Resistance ◽  
High Efficiency ◽  
High Efficiency Solar Cells ◽  
Resistance Modeling

Enhanced up-converted fluorescence in fluorozirconate based glass ceramics for high efficiency solar cells

2008 ◽  
Author(s):  
Bernd Ahrens ◽  
Bastian Henke ◽  
Paul T. Miclea ◽  
Jacqueline A. Johnson ◽  
Stefan Schweizer
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Glass Ceramics ◽  
High Efficiency Solar Cells

Improvement in Wide-Gap A-SI:H For High-Efficiency Solar Cells

1992 ◽  
Vol 258 ◽  
Author(s):  
Sadaji Tsuge ◽  
Yoshihiro Hishikawa ◽  
Shingo Okamoto ◽  
Manabu Sasaki ◽  
Shinya Tsuda ◽  
...  
Keyword(s):  
Solar Cells ◽  
Plasma Treatment ◽  
High Efficiency ◽  
Defect Density ◽  
Hydrogen Plasma ◽  
Wide Band ◽  
Open Circuit ◽  
Wide Band Gap ◽  
High Efficiency Solar Cells ◽  
Wide Gap

ABSTRACTA hydrogen-plasma treatment has been used for the first time to fabricate wide-gap, high-quality a-Si:H films. The hydrogen content (CH) of a-Si:H films substantially increases by the hydrogen-plasma treatment after deposition, without deteriorating the opto-electric properties of the films. The photoconductivity (σph) of ≥ 10-5 ο-1 cm-1, photosensitivity ( σ ph/σ d) of > 106 and SiH2/SiH of <0.2 are achieved for a film with CH of ∼25 atomic >%. The optical gap of the film is > 1.70 eV by the (α h ν )1/3 plot, and is >2 eV by the Tauc's plot. The open circuit voltage of a-Si solar cells exceeds 1 V conserving the fill factor of > 0.7 when the wide-gap a∼Si:H films are used as the i-layer, which proves the wide band gap and low defect density.

Incorporating photon recycling into the analytical drift-diffusion model of high efficiency solar cells

2014 ◽  
Vol 116 (19) ◽  
pp. 194504 ◽  
Author(s):  
Matthew P. Lumb ◽  
Myles A. Steiner ◽  
John F. Geisz ◽  
Robert J. Walters
Keyword(s):  
Solar Cells ◽  
Diffusion Model ◽  
High Efficiency ◽  
Drift Diffusion Model ◽  
Drift Diffusion ◽  
High Efficiency Solar Cells ◽  
Photon Recycling

scholarly journals Application Examples for the Different Measurement Modes of Electrical Properties of the Solar Cells

2014 ◽  
Vol 59 (1) ◽  
pp. 247-252 ◽  
Author(s):  
M. Musztyfaga-Staszuk ◽  
L.A. Dobrzanski ◽  
S. Rusz ◽  
M. Staszuk
Keyword(s):  
Solar Cells ◽  
Electrical Properties ◽  
Contact Resistance ◽  
Sheet Resistance ◽  
Cross Sections ◽  
Standard Technique ◽  
Photovoltaic Cell ◽  
Metal Resistance ◽  
Silicon Wafers ◽  
Formation Technique

Abstract The aim of the paper was to apply the newly developed instruments ‘Corescan’ and ‘Sherescan’ in order to measure the essential parameters of producing solar cells in comparison with the standard techniques. The standard technique named the Transmission Line Method (TLM) is one way to monitor contacting process to measure contact resistance locally between the substrate and metallization. Nowadays, contact resistance is measured over the whole photovoltaic cell using Corescanner instrument. The Sherescan device in comparison with standard devices gives a possibility to measure the sheet resistance of the emitter of silicon wafers and determine of both P/N recognition and metal resistance. The Screen Printing (SP) method is the most widely used contact formation technique for commercial silicon solar cells. The contact resistance of manufactured front metallization depends of both the paste composition and co-firing conditions. Screen printed front side metallization and next to co-fired in the infrared conveyor furnace was carried out at various temperature from 770°C to 920°C. The silver paste used in the present paper is commercial. The investigations were carried out on monocrystalline silicon wafers. The topography of co-fired in the infrared belt furnace front metallization was investigated using the atomic force microscope and scanning electron microscope (SEM). There were researched also cross sections of front contacts using SEM microscope. Front contacts of the solar cells were formed on non-textured silicon surface with coated antireflection layer. On one hand, based on electrical properties investigations using Sherescan instrument it was obtained the knowledge of the emitter sheet resistance across the surface of a wafer, what is essential in optimizing the emitter diffusion process. On the other hand, it was found using Corescan instrument that the higher temperature apparently results in a strongly decreased contact resistance.

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