Application Examples for the Different Measurement Modes of Electrical Properties of the Solar Cells

Abstract The aim of the paper was to apply the newly developed instruments ‘Corescan’ and ‘Sherescan’ in order to measure the essential parameters of producing solar cells in comparison with the standard techniques. The standard technique named the Transmission Line Method (TLM) is one way to monitor contacting process to measure contact resistance locally between the substrate and metallization. Nowadays, contact resistance is measured over the whole photovoltaic cell using Corescanner instrument. The Sherescan device in comparison with standard devices gives a possibility to measure the sheet resistance of the emitter of silicon wafers and determine of both P/N recognition and metal resistance. The Screen Printing (SP) method is the most widely used contact formation technique for commercial silicon solar cells. The contact resistance of manufactured front metallization depends of both the paste composition and co-firing conditions. Screen printed front side metallization and next to co-fired in the infrared conveyor furnace was carried out at various temperature from 770°C to 920°C. The silver paste used in the present paper is commercial. The investigations were carried out on monocrystalline silicon wafers. The topography of co-fired in the infrared belt furnace front metallization was investigated using the atomic force microscope and scanning electron microscope (SEM). There were researched also cross sections of front contacts using SEM microscope. Front contacts of the solar cells were formed on non-textured silicon surface with coated antireflection layer. On one hand, based on electrical properties investigations using Sherescan instrument it was obtained the knowledge of the emitter sheet resistance across the surface of a wafer, what is essential in optimizing the emitter diffusion process. On the other hand, it was found using Corescan instrument that the higher temperature apparently results in a strongly decreased contact resistance.

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Effect of doping profile on sheet resistance and contact resistance of monocrystalline silicon solar cells

Materials Research Express ◽

10.1088/2053-1591/ab1e8c ◽

2019 ◽

Vol 6 (8) ◽

pp. 085510 ◽

Cited By ~ 1

Author(s):

M K Basher ◽

M Jalal Uddin ◽

M Khalid Hossain ◽

M A R Akand ◽

S Biswas ◽

...

Keyword(s):

Solar Cells ◽

Contact Resistance ◽

Sheet Resistance ◽

Monocrystalline Silicon ◽

Doping Profile ◽

Silicon Solar Cells ◽

Effect Of Doping

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Fabricating high efficiency solar cells with high sheet resistance emitters by ion implantation and contact resistance modeling

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) ◽

10.1109/pvsc.2013.6744904 ◽

2013 ◽

Cited By ~ 1

Author(s):

Vikram Bhosle ◽

Basil Tsefrekas ◽

Hans-Joachim L. Gossmann ◽

Christopher E. Dube

Keyword(s):

Solar Cells ◽

Ion Implantation ◽

Contact Resistance ◽

Sheet Resistance ◽

High Efficiency ◽

High Efficiency Solar Cells ◽

Resistance Modeling

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Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates

Beilstein Journal of Nanotechnology ◽

10.3762/bjnano.4.24 ◽

2013 ◽

Vol 4 ◽

pp. 234-242 ◽

Cited By ~ 22

Author(s):

Gabriele Fisichella ◽

Salvatore Di Franco ◽

Patrick Fiorenza ◽

Raffaella Lo Nigro ◽

Fabrizio Roccaforte ◽

...

Keyword(s):

Electrical Properties ◽

Contact Resistance ◽

Sheet Resistance ◽

Flexible Electronics ◽

Structural Integrity ◽

Chemical Vapour ◽

Specific Contact Resistance ◽

Large Area ◽

Conductive Atomic Force Microscopy ◽

Specific Contact

Chemical vapour deposition (CVD) on catalytic metals is one of main approaches for high-quality graphene growth over large areas. However, a subsequent transfer step to an insulating substrate is required in order to use the graphene for electronic applications. This step can severely affect both the structural integrity and the electronic properties of the graphene membrane. In this paper, we investigated the morphological and electrical properties of CVD graphene transferred onto SiO2 and on a polymeric substrate (poly(ethylene-2,6-naphthalene dicarboxylate), briefly PEN), suitable for microelectronics and flexible electronics applications, respectively. The electrical properties (sheet resistance, mobility, carrier density) of the transferred graphene as well as the specific contact resistance of metal contacts onto graphene were investigated by using properly designed test patterns. While a sheet resistance R sh ≈ 1.7 kΩ/sq and a specific contact resistance ρc ≈ 15 kΩ·μm have been measured for graphene transferred onto SiO2, about 2.3× higher R sh and about 8× higher ρc values were obtained for graphene on PEN. High-resolution current mapping by torsion resonant conductive atomic force microscopy (TRCAFM) provided an insight into the nanoscale mechanisms responsible for the very high ρc in the case of graphene on PEN, showing a ca. 10× smaller “effective” area for current injection than in the case of graphene on SiO2.

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Cold Wall CVD Graphene-Based Transparent Electrode for Solar Cells

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.813.310 ◽

2019 ◽

Vol 813 ◽

pp. 310-315 ◽

Cited By ~ 1

Author(s):

Claudia Cirillo ◽

Domenico Spina ◽

Lucia V. Mercaldo ◽

Paola Delli Veneri ◽

Maria Sarno

Keyword(s):

Solar Cells ◽

Electrical Properties ◽

Thin Layer ◽

Graphene Film ◽

Photovoltaic Cell ◽

Transparent Electrode ◽

Superior Performance ◽

Optical And Electrical Properties ◽

Cold Wall ◽

Cu Foil

In this paper, we report on synthesis of graphene film on Cu foil by cold wall CVD and successfully transferred to a photovoltaic cell. The obtained sample was covered with an ultra-thin layer of Ni, of about 4 nm, using a sputtering technique. The optical and electrical properties of graphene/Ni-based films showed superior performance (transmittance =65%, sheet resistance=250 Ω/sq; EQE=40%) compared to films made of ITO/nickel, described in literature, of greater thickness.

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A New Method to Characterize TCO/P Contact Resistance in a-SI Solar Cells

MRS Proceedings ◽

10.1557/proc-557-737 ◽

1999 ◽

Vol 557 ◽

Cited By ~ 3

Author(s):

Steven S. Hegedus ◽

Michael Gibson ◽

Gautam Ganguly ◽

Rajeewa Arya

Keyword(s):

Solar Cells ◽

Contact Resistance ◽

Sheet Resistance ◽

New Method ◽

Straightforward Manner ◽

Si Solar Cells

AbstractA method is presented to characterize the TCO/p contact and the TCO sheet resistance in a-Si based p-i-n superstrate devices. It requires having scribed TCO strips, which are electrically isolated before a-Si deposition, then fabricating rows of individual devices on each strip. Analysis of 4-terminal measurements in different V-sensing configurations yields the TCO/p contact and TCO sheet resistance in a straightforward manner. The method is applied to devices fabricated on 3 brands of commercial SnO2 substrates. The TCO/p contact resistance is found to be ~2 Ω-cm2 and the sheet resistance decreases by 2-4 Ω/sq after a-Si deposition on all 3 brands of SnO2 substrates.

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