Micro-Raman Characterization of Arsenic-Implanted Silicon: Interpretation of the Spectra
Keyword(s):
AbstractRaman spectra were measured on arsenic-implanted silicon with micro-Raman spectroscopy in the backscattering mode and with macro-Raman spectroscopy. A peak is observed between 505 and 510 cm−1 with 488 and 514.5 nm excitation. This peak and a related peak from the substrate at about 520 cm−1 are seen in selected regions of the implanted samples when the implant dose is above 2 × 1014 As/cm2. These features may be due to a long room temperature anneal, as they are absent in recently prepared samples. Possible explanations for the features are presented.
Keyword(s):
Structural characterization of thin films formed or changed on materials by micro Raman spectroscopy
1998 ◽
Vol 361
(6-7)
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pp. 619-620
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2007 ◽
Vol 38
(10)
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pp. 1267-1273
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2016 ◽
Vol 91
(1-4)
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pp. 213-225
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2001 ◽
Vol 56
(6)
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pp. 915-922
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