A non-destructive characterization of stratigraphies in contemporary prints using micro-Raman spectroscopy

2007 ◽  
Vol 38 (10) ◽  
pp. 1267-1273 ◽  
Author(s):  
A. Vila ◽  
T. Jawhari ◽  
J. F. García
Keyword(s):  
Raman Spectroscopy ◽  
Micro Raman Spectroscopy ◽  
Non Destructive ◽  
Non Destructive Characterization

Non-Contact and Non-Destructive Characterization of Shallow Implanted Silicon PN Junctions using Ultra-Violet Raman Spectroscopy

2011 ◽  
Author(s):  
Masashi Fukumoto ◽  
Noriyuki Hasuike ◽  
Hiroshi Harima ◽  
Masahiro Yoshimoto ◽  
Woo Sik Yoo ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Ultra Violet ◽  
Pn Junctions ◽  
Non Destructive ◽  
Non Destructive Characterization

Micro-Raman Spectroscopy for the Characterization of Materials in Electronic and Photonic Devices

1997 ◽  
Vol 3 (S2) ◽  
pp. 843-844
Author(s):  
David D.Tuschel
Keyword(s):  
Raman Spectroscopy ◽  
Photonic Devices ◽  
Materials Characterization ◽  
Selection Rules ◽  
Micro Raman Spectroscopy ◽  
Optical And Electronic Properties ◽  
Oriented Polycrystalline ◽  
Characterization Of Materials ◽  
Non Destructive

Materials characterization is the primary application of macro- and micro-Raman spectroscopy in our laboratory. Specifically, we wish to correlate chemical bonding and short to long range translational symmetry (including amorphous, highly oriented, polycrystalline, and single crystal materials) to physical, optical and electronic properties of materials and devices. Raman spectroscopy is particularly useful in this capacity because of its origin in the vibrational motions of chemically bonded atoms and its dependence upon crystal symmetry through the polarization selection rules. Furthermore, the high spatial resolution and non-destructive nature of micro-Raman spectroscopy make it ideal for in situcharacterization of electronic and photonic devices. We will present results of materials characterization studies, performed using macro- and micro-Raman spectroscopy, of electronic and photonic devices. In addition, we will discuss how the Raman polarization selection rules can be advantageously applied to device characterization.A primary area of investigation involves the study of ion-implanted and annealed Si by Raman spectroscopy.

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