Nitrogen Incorporation and Growth Kinetics of GaAsN/GaAs Epilayers Grown by MOVPE

2000 ◽  
Vol 616 ◽  
Author(s):  
Laurent Auvray ◽  
Hervé Dumont ◽  
Jacques Dazord ◽  
Yves Monteil ◽  
Jean Bouix
Keyword(s):  
Activation Energy ◽  
Phase Composition ◽  
Gas Phase ◽  
Competitive Adsorption ◽  
Nonlinear Function ◽  
Group V ◽  
Nitrogen Incorporation ◽  
Nitrogen Desorption ◽  
Kinetics Of ◽  
Growth Temperature Range

AbstractThe nitrogen incorporation behavior in GaAs was investigated in the growth temperature range 500-600°C. It was observed that the temperature-dependence of the nitrogen incorporation exhibits two regimes. At 530°C, the nitrogen content x is a nonlinear function of the gas-phase composition indicating a surface-controlled reaction mechanism. The N composition varies slowly with 500°C < T < 560°C with an activation energy of 0.6 eV. For T < 560°C, N decreases exponentially with Ea= 3.7 eV, interpreted in terms of nitrogen desorption. In light of experimental results, we propose a surface kinetic model based on the competitive adsorption of group V precursors.

Gas phase photochlorination of perfluorocyclohexene

1969 ◽  
Vol 47 (6) ◽  
pp. 1067-1069 ◽  
Author(s):  
J. J. Cosa ◽  
C. A. Vallana ◽  
E. H. Staricco
Keyword(s):  
Activation Energy ◽  
Quantum Yield ◽  
Gas Phase ◽  
Photochemical Reaction ◽  
Total Pressure ◽  
Square Root ◽  
Kcal Mole ◽  
Kinetics Of

The kinetics of the gas phase photochemical reaction between perfluorocyclohexene and chlorine was studied between 10 and 50 °C. The system was irradiated with light of 4360 Å. The rate of the photochlorination was independent of the perfluorocyclohexene pressure and of the total pressure. It was found to be proportional to the first power of the pressure of Cl2 and to the square root of the intensity of absorbed light. At 30 °C, the quantum yield was found to be 200 when the initial Cl2 pressure was 100 Torr, and intensity of light absorbed 9.89 × 10−9 einstein l−1s−1.An activation energy of 5.1 kcal/mole could be assigned to the reaction C6F10Cl + Cl2.

Selective Epitaxy of AlxGa1−x as and AlxGal−x as Based Structures

1989 ◽  
Vol 158 ◽  
Author(s):  
M.S. Goorsky ◽  
T.F. Kuech ◽  
R. Potemski
Keyword(s):  
Growth Rate ◽  
Phase Composition ◽  
Quantum Wells ◽  
Gas Phase ◽  
Growth Temperature ◽  
Alloy Composition ◽  
Growth Conditions ◽  
Selective Epitaxy ◽  
Strong Function ◽  
Growth Temperature Range

ABSTRACTSelective epitaxy of AlxGa1−x As by MOVPE was accomplished using diethyl gallium chloride and diethyl aluminum chloride as the metalorganic precursors. Selective epitaxy was achieved for Al containing compounds under certain growth conditions, but AlAs growth was not selective. Quantum wells were selectively grown on masked substrates and unpatterned GaAs wafers; QW luminescence was observed from all samples. Additionally, near gap luminescence was observed from AlxGa1−x, As heterostructures over the entire 550 °C - 850 °C growth temperature range. The ternary alloy composition was found to be a strong function of the gas phase composition and growth temperature. A simple thermodynamic model explained the dependence of growth rate and composition on these parameters.

KINETICS OF THE PHOTOCHLORINATION OF MONOCHLOROMETHYL CHLOROFORMATE IN THE GAS PHASE

1957 ◽  
Vol 35 (11) ◽  
pp. 1341-1350 ◽  
Author(s):  
M. J. Dignam ◽  
W. G. Forbes ◽  
D. J. Le Roy
Keyword(s):  
Activation Energy ◽  
Gas Phase ◽  
Hydrogen Abstraction ◽  
The Other ◽  
Third Body ◽  
Order Process ◽  
First Order ◽  
Diffusion Controlled ◽  
Kinetics Of ◽  
Atomic Chlorine

The general features of the mechanism of the over-all process [Formula: see text][Formula: see text] are similar to those for the over-all process [Formula: see text][Formula: see text] studied previously. The reaction is inhibited by HCl. Chains are terminated by two processes, one of which is first order, the other second order in atomic chlorine. The first order process is not entirely diffusion controlled and a theory is advanced to account for its nature; the homogeneous combination of chlorine atoms requires a third body, mono- and di-chloromethyl chloroformate being particularly effective. The activation energy for hydrogen abstraction from monochloromethyl chloroformate by atomic chlorine is 5.2 kcal. per mole. The C—H bond dissociation energy in monochloromethyl chloroformate is estimated to be 99.8 ± 4.5 kcal. per mole.

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