Selective Epitaxy of AlxGa1−x as and AlxGal−x as Based Structures

1989 ◽  
Vol 158 ◽  
Author(s):  
M.S. Goorsky ◽  
T.F. Kuech ◽  
R. Potemski
Keyword(s):  
Growth Rate ◽  
Phase Composition ◽  
Quantum Wells ◽  
Gas Phase ◽  
Growth Temperature ◽  
Alloy Composition ◽  
Growth Conditions ◽  
Selective Epitaxy ◽  
Strong Function ◽  
Growth Temperature Range

ABSTRACTSelective epitaxy of AlxGa1−x As by MOVPE was accomplished using diethyl gallium chloride and diethyl aluminum chloride as the metalorganic precursors. Selective epitaxy was achieved for Al containing compounds under certain growth conditions, but AlAs growth was not selective. Quantum wells were selectively grown on masked substrates and unpatterned GaAs wafers; QW luminescence was observed from all samples. Additionally, near gap luminescence was observed from AlxGa1−x, As heterostructures over the entire 550 °C - 850 °C growth temperature range. The ternary alloy composition was found to be a strong function of the gas phase composition and growth temperature. A simple thermodynamic model explained the dependence of growth rate and composition on these parameters.

Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions

2005 ◽  
Vol 483-485 ◽  
pp. 25-30 ◽  
Author(s):  
Peter J. Wellmann ◽  
Thomas L. Straubinger ◽  
Patrick Desperrier ◽  
Ralf Müller ◽  
Ulrike Künecke ◽  
...  
Keyword(s):  
Temperature Field ◽  
Phase Composition ◽  
Gas Phase ◽  
Growth Conditions ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Process Conditions ◽  
Growth Technique ◽  
Experimental Implementation ◽  
P Type

We review the development of a modified physical vapor transport (M-PVT) growth technique for the preparation of SiC single crystals which makes use of an additional gas pipe into the growth cell. While the gas phase composition is basically fixed in conventional physical vapor transport (PVT) growth by crucible design and temperature field, the gas inlet of the MPVT configuration allows the direct tuning of the gas phase composition for improved growth conditions. The phrase "additional" means that only small amounts of extra gases are supplied in order to fine-tune the gas phase composition. We discuss the experimental implementation of the extra gas pipe and present numerical simulations of temperature field and mass transport in the new growth configuration. The potential of the growth technique will be outlined by showing the improvements achieved for p-type doping of 4H-SiC with aluminum, i.e. [Al]=9⋅1019cm-3 and ρ<0.2Ωcm, and n-type doping of SiC with phosphorous, i.e. [P]=7.8⋅1017cm-3.

Effect of Substrate Misonrentation on Ordering in Ga0.5In0.5P

1994 ◽  
Vol 340 ◽  
Author(s):  
L.C. Su ◽  
I.H. Ho ◽  
G.B. Stringfellow ◽  
Y. Leng ◽  
C.C. Williams
Keyword(s):  
Growth Rate ◽  
Misorientation Angle ◽  
Growth Temperature ◽  
Electrostatic Force ◽  
Surface States ◽  
Energy Difference ◽  
Growth Conditions ◽  
Disordered Materials ◽  
Transmission Electron ◽  
Degree Of Order

ABSTRACTOrdering produced in Ga0.5ln0.5P epitaxial layers grown by OMVPE can be controlled by variations in the substrate misorientation as well as the growth temperature and the growth rate. The ordering produced at a growth temperature of 620°C and a relatively low growth rate of 0.5 μm/hr is found to depend strongly on both the direction and angle of substrate misorientation. Transmission electron microscope images and transmission electron diffraction (TED) patterns as well as electrostatic force microscopy (EFM) and photoluminescence (PL) has been studied for misorientation angles of 0, 3, 6, and 9° from (001) toward the (111)B, (111)A, and [010] directions in the lattice. Misorientation in the (111)B direction (to produce [110] steps) increases ordering for angles of up to approximately 4°. Increasing the misorientation angle in the (111)A direction actually leads to a decrease in the degree of order observed. Misorientation in the [010] direction also decreases the degree of order, although the effect is much less than observed for misorientation in the (111)A direction. The most highly ordered material produced under these growth conditions is for a misorientation angle of 3° in the (111)A direction. Increasing the growth temperature to 720°C produces completely disordered material. This wide variation in ordering behavior has allowed the growth of an order/disorder heterostructure for a substrate misorientation of 3° in the (111)A direction. The heterostructure consists of a Ga0.52In0.48P layer grown at 740°C followed by an ordered layer grown at 620°C. The x-ray diffraction results show that both layers are precisely lattice-matched to the GaAs substrate. TED patterns show that the first layer is completely disordered and the top layer is highly ordered, with only a single variant. EFM images of the order/disorder heterostructure show a pronounced contrast at the interface, attributed to the large difference in the nature of the surface states in the ordered and disordered materials. The 10 K PL spectrum consists of two sharp and distinct peaks at 1.995 and 1.830 eV from the disordered and ordered materials, respectively. The peak separation represents the largest energy difference between ordered and disordered materials reported to date. Such heterostructures may be useful for photonic devices.

Nitrogen Incorporation and Growth Kinetics of GaAsN/GaAs Epilayers Grown by MOVPE

2000 ◽  
Vol 616 ◽  
Author(s):  
Laurent Auvray ◽  
Hervé Dumont ◽  
Jacques Dazord ◽  
Yves Monteil ◽  
Jean Bouix
Keyword(s):  
Activation Energy ◽  
Phase Composition ◽  
Gas Phase ◽  
Competitive Adsorption ◽  
Nonlinear Function ◽  
Group V ◽  
Nitrogen Incorporation ◽  
Nitrogen Desorption ◽  
Kinetics Of ◽  
Growth Temperature Range

AbstractThe nitrogen incorporation behavior in GaAs was investigated in the growth temperature range 500-600°C. It was observed that the temperature-dependence of the nitrogen incorporation exhibits two regimes. At 530°C, the nitrogen content x is a nonlinear function of the gas-phase composition indicating a surface-controlled reaction mechanism. The N composition varies slowly with 500°C < T < 560°C with an activation energy of 0.6 eV. For T < 560°C, N decreases exponentially with Ea= 3.7 eV, interpreted in terms of nitrogen desorption. In light of experimental results, we propose a surface kinetic model based on the competitive adsorption of group V precursors.

scholarly journals Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

2020 ◽  
Author(s):  
Dario Schiavon ◽  
Elżbieta Litwin-Staszewska ◽  
Rafał Jakieła ◽  
Szymon Grzanka ◽  
Piotr Perlin
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Low Temperature ◽  
Surface Morphology ◽  
Growth Temperature ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Pit Formation ◽  
Movpe Growth

The effect of growth temperature and precursor flows on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.

Effect of the Growth Conditions on the Crystal Quality in Solution Growth of SiC Using Cr Solvent without Molten Si

2018 ◽  
Vol 924 ◽  
pp. 35-38 ◽  
Author(s):  
Koki Suzuki ◽  
Koang Yong Hyun ◽  
Toshinori Taishi
Keyword(s):  
Growth Rate ◽  
Growth Temperature ◽  
Growth Conditions ◽  
Solution Growth ◽  
Crystal Quality ◽  
Liquid Height

We have succeeded in solution growth of SiC from Cr solvent without Si using ceramic SiC as the SiC source. The effect of the growth conditions, such as the liquid height in the crucible, on the crystal quality in solution growth of SiC from Cr solvent was investigated. For a liquid height in the crucible of up to 10 mm, the growth rate increases with increasing liquid height and the SiC crystals are a single polytype, while the growth rate decreases and the crystals are polycrystalline for a liquid height above 10 mm. In the former case, the balance between dissolution and transportation of the solute are comparable. The latter case is expected to be transportation limited because transportation of free C and Si atoms is inhibited by excrescent crystals in solution and the increase in the distance for solute transportation. In addition, a higher growth temperature leads to growth of only 4H-SiC.

scholarly journals Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

Nanomaterials ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 11
Author(s):  
Viktor Shamakhov ◽  
Dmitriy Nikolaev ◽  
Sergey Slipchenko ◽  
Evgenii Fomin ◽  
Alexander Smirnov ◽  
...  
Keyword(s):  
Growth Rate ◽  
Integrated Circuits ◽  
Quantum Wells ◽  
Chemical Vapour ◽  
Growth Conditions ◽  
Local Change ◽  
Selective Area Epitaxy ◽  
Mocvd Growth ◽  
Selective Area ◽  
Sio2 Mask

Selective area epitaxy (SAE) is widely used in photonic integrated circuits, but there is little information on the use of this technique for the growth of heterostructures in ultra-wide windows. Samples of heterostructures with InGaAs quantum wells (QWs) on GaAs (100) substrates with a pattern of alternating stripes (100-μm-wide SiO2 mask/100-μm-wide window) were grown using metalorganic chemical vapour deposition (MOCVD). It was found that due to a local change in the growth rate of InGaAs QW in the window, the photoluminescence (PL) spectra measured from the edge to the center of the window exhibited maximum blueshifts of 14 and 19 meV at temperatures of 80 K and 300 K, respectively. Using atomic force microscopy, we have demonstrated that the surface morphologies of structures grown using standard epitaxy or SAE under identical MOCVD growth conditions correspond to a step flow growth with a step height of ~1.5 ML or a step bunching growth mode, respectively. In the structures grown with the use of SAE, a strong variation in the surface morphology in an ultra-wide window from its center to the edge was revealed, which is explained by a change in the local misorientation of the layer due to a local change in the growth rate over the width of the window.

Influence Of Growth Conditions On The Thermal Quenching Of Photoluminescence From Sige/Si Quantum Structures

1998 ◽  
Vol 533 ◽  
Author(s):  
I. A. Buyanova ◽  
W. M. Chen ◽  
W.-X. Ni ◽  
G. V. Hansson ◽  
B. Monemar
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Growth Temperature ◽  
Thermal Activation ◽  
Molecular Beam ◽  
Thermal Quenching ◽  
Growth Conditions ◽  
Mbe Growth ◽  
Temperature Growth ◽  
Optically Detected

AbstractIn this work we study effects of growth temperature and use of surfactant during growth on thermal quenching of photoluminescence (PL) from SiGe/Si quantum wells (QWs) grown by molecular beam epitaxy (MBE). We show that although all investigated structures demonstrate intense and sharp excitonic emissions from the SiGe QWs at liquid helium temperature, thermal quenching of this PL critically depends on the growth conditions. In particular, the use of low (⁤ 550°C) growth temperatures or employing Sb as a surfactant during high temperature (620°C) growth considerably degrades the PL thermal quenching behaviour by introducing some competing quenching processes with low activation energies of about 5 meV. The optimum growth conditions judging from the PL thermal behaviour are realised during high temperature growth without surfactant (620°C). Even higher growth temperature is shown to be required during surfactant mediated growth to improve the thermal quenching behaviour. From optically detected magnetic resonance (ODMR) studies, the competing quenching processes are attributed to a thermal activation of non-radiative defects introduced during either low-temperature MBE growth or during surfactant-mediated growth.

Epitaxial Growth of 4H-SiС Using Si2(CH3)6+Si2Cl6+C3H8+H2 System by Atmospheric Pressure Hot CVD Method

2012 ◽  
Vol 717-720 ◽  
pp. 97-100
Author(s):  
Hyun Seung Lee ◽  
Min Jae Kim ◽  
Min Hee Kim ◽  
Sang Il Lee ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Growth Temperature ◽  
Atmospheric Pressure ◽  
High Growth ◽  
High Growth Rate ◽  
High Quality ◽  
Cvd Method

The chlorinated precursor is recently focused for high growth rate and high quality epitaxial layer. In the previous studies, the addition of chlorinated species from Si2Cl6 in the gas phase eliminated simultaneous Si nucleation which interferes with epitaxy. In this work, the characterization of epitaxial layers grown with chlorinated species is focused. High growth rate of 30 μm/h was achieved by using Si2(CH3)6 and Si2Cl6 as chlorinated precursors. We concluded that high growth rate was achieved by using HMDS and HCDS as the precursor of SiC at growth temperature of 1600 °C.

Stress engineering using AlN/GaN superlattices for epitaxy of GaN on 200 mm Si wafers

2014 ◽  
Vol 1736 ◽  
Author(s):  
Jie Su ◽  
Eric A. Armour ◽  
Balakrishnan Krishnan ◽  
Soo Min Lee ◽  
George D. Papasouliotis
Keyword(s):  
Growth Rate ◽  
Tensile Stress ◽  
Growth Temperature ◽  
Growth Conditions ◽  
Stress Control ◽  
Stress Engineering ◽  
Constant Period

ABSTRACTStress control using AlN/GaN superlattices (SLs) for epitaxy of GaN on 200 mm Si (111) substrates is reported. Crack-free 2 μm GaN layers were grown over structures containing 50 to 100 pairs of 3-5 nm AlN/10-30 nm GaN SLs. Compressive and tensile stress can be precisely adjusted by changing the thickness of the AlN and GaN layers in the SLs. For a constant period thickness, the effects of growth conditions, such as growth rate of GaN, V/III ratio during AlN growth, and growth temperature, on wafer stress were investigated.

Dependence of the Growth of Al2O3 Films on the Growth Conditions in the ALE-Like Process

1992 ◽  
Vol 284 ◽  
Author(s):  
Jia-Fa Fan ◽  
Koichi Toyoda
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Electrical Properties ◽  
Growth Temperature ◽  
Chemical Bonding ◽  
Bonding Strength ◽  
Molecular Beams ◽  
Growth Conditions ◽  
Al2o3 Films

ABSTRACTEffects of the growth conditions on the growth and the quality of thin films of Al2O3 were investigated in the ALE-like process. It has been found that the growth rate remains nearly independent of the growth conditions when the pulse heights are 80–120 mTorr and 20–160 mTorr for H2O2 and TMA respectively, the pulse duration longer than 0.3 s, the base pressure below 1 mTorr, and the growth temperature higher than 150°C. Also, we found that the density, the chemical bonding strength, and the electrical properties improved markedly with raising the growth temperature although the growth rate remained nearly constant. In addition, area-selective growth and partly polycrystalline films were favorably obtained by using pulsed molecular beams of TMA and H2O2 in the growth.

Sign in / Sign up

Export Citation Format

Share Document