Lateral and Vertical Growth Study in the Initial Stages of GaN Growth on Sapphire with ZnO Buffer Layers by Hydride Vapor Phase Epitaxy

2000 ◽  
Vol 622 ◽  
Author(s):  
Shulin Gu ◽  
Rong Zhang ◽  
Ling Zhang ◽  
T. F. Kuech
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
Initial Growth ◽  
Lateral Growth ◽  
Subsequent Step ◽  
Lateral Growth Rate ◽  
High Supersaturation ◽  
Optimal Material

ABSTRACTThe initial stage of hydride vapor phase epitaxy GaN growth on ZnO-buffered sapphire is reported. A high supersaturation in the growth ambient was used to favor a rapid initial growth on the substrate. A subsequent step with high lateral growth rate was chosen to promote coalescence of the initial islands and provide optimal material properties. The specific mole fractions of the GaCl and NH3 control these vertical and lateral growth rates. The use of a two- step growth process in the GaN growth has led to improved and controlled morphology and high quality GaN materials have then been grown on sapphire substrate with and without ZnO buffer layers.

Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy

1999 ◽  
Vol 595 ◽  
Author(s):  
T. S. Kuan ◽  
C. K. Inoki ◽  
Y. Hsu ◽  
D. L. Harris ◽  
R. Zhang ◽  
...  
Keyword(s):  
Growth Rate ◽  
Shear Stress ◽  
Vapor Phase ◽  
Large Angle ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Lateral Growth ◽  
Lateral Growth Rate ◽  
Edge Dislocations

AbstractWe have carried out a series of lateral epitaxial overgrowths (LEO) of GaN through thin oxide windows by the hydride vapor phase epitaxy (HVPE) technique at different growth temperatures. High lateral growth rate at 1100°C allows coalescing of neighboring islands into a continuous and flat film, while the lower lateral growth rate at 1050°C produces triangular-shaped ridges over the growth windows. In either case, threading dislocations bend into laterally grown regions to relax the shear stress developed in the film during growth. In regions close to the mask edge, where the shear stress is highest, dislocations interact and multiply into arrays of edge dislocations lying parallel to the growth window. This multiplication and pileup of dislocations cause a large-angle tilting of the laterally grown regions. The tilt angle is high (∼8 degrees) when the growth is at 1050°C and becomes smaller (3-5 degrees) at 1100°C. At the coalescence of growth facets, a tilt-type grain boundary is formed. During the high-temperature lateral growth, the tensile stress in the GaN seed layer and the thermal stress from the mask layer both contribute to a high shear stress at the growth facets. Finite element stress simulations suggest that this shear stress may be sufficient to cause the observed excessive dislocation activities and tilting of LEO regions at high growth temperatures.

scholarly journals Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy

2000 ◽  
Vol 5 (S1) ◽  
pp. 83-89 ◽  
Author(s):  
T. S. Kuan ◽  
C. K. Inoki ◽  
Y. Hsu ◽  
D. L. Harris ◽  
R. Zhang ◽  
...  
Keyword(s):  
Growth Rate ◽  
Shear Stress ◽  
Vapor Phase ◽  
Large Angle ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Lateral Growth ◽  
Lateral Growth Rate ◽  
Edge Dislocations

We have carried out a series of lateral epitaxial overgrowths (LEO) of GaN through thin oxide windows by the hydride vapor phase epitaxy (HVPE) technique at different growth temperatures. High lateral growth rate at 1100°C allows coalescing of neighboring islands into a continuous and flat film, while the lower lateral growth rate at 1050°C produces triangular-shaped ridges over the growth windows. In either case, threading dislocations bend into laterally grown regions to relax the shear stress developed in the film during growth. In regions close to the mask edge, where the shear stress is highest, dislocations interact and multiply into arrays of edge dislocations lying parallel to the growth window. This multiplication and pileup of dislocations cause a large-angle tilting of the laterally grown regions. The tilt angle is high (∼8 degrees) when the growth is at 1050°C and becomes smaller (3-5 degrees) at 1100°C. At the coalescence of growth facets, a tilt-type grain boundary is formed. During the high-temperature lateral growth, the tensile stress in the GaN seed layer and the thermal stress from the mask layer both contribute to a high shear stress at the growth facets. Finite element stress simulations suggest that this shear stress may be sufficient to cause the observed excessive dislocation activities and tilting of LEO regions at high growth temperatures.

Influence of lateral growth on the optical properties of GaN nanowires grown by hydride vapor phase epitaxy

2017 ◽  
Vol 122 (20) ◽  
pp. 205302 ◽  
Author(s):  
Shaoteng Wu ◽  
Liancheng Wang ◽  
Xiaoyan Yi ◽  
Zhiqiang Liu ◽  
Tongbo Wei ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Lateral Growth ◽  
Gan Nanowires

Epitaxial Lateral Overgrowth of GaN with Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy

1998 ◽  
Vol 537 ◽  
Author(s):  
R. Zhang ◽  
L. Zhang ◽  
D.M. Hansen ◽  
Marek P. Boleslawski ◽  
K.L. Chen ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Temperature ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Growth Environment ◽  
Gallium Chloride ◽  
Lateral Overgrowth ◽  
Lateral Growth Rate

AbstractEpitaxial lateral overgrowth (ELO) of GaN on SiO2-masked (0001) GaN substrates has been investigated by using chloride-based growth chemistries via hydride vapor phase epitaxy (HVPE) and metal organic vapor phase epitaxy (MOVPE). Diethyl gallium chloride, (C2H5)2GaCl, was used in as the MOVPE Ga precursor. The lateral and vertical growth rates as well as the overgrowth morphology of ELO GaN structures are dependent on growth temperature, V/III ratio and the in-plane orientation of the mask opening. A high growth temperature and low V/III ratio increase the lateral growth rate and produce ELO structures with a planar surface to the GaN prisms. High-quality coalesced and planar ELO GaN has been fabricated by both growth chemistries. The use of the diethyl gallium chloride source allows for the benefits of HVPE growth to be realized within the MOVPE growth environment.

Pole figure measurement of the initial growth of GaN nanoneedles on GaN/Si(111) by using hydride vapor phase epitaxy

2016 ◽  
Vol 69 (5) ◽  
pp. 837-841
Author(s):  
Injun Jeon ◽  
Ha Young Lee ◽  
Ji-Yeon Noh ◽  
Hyung Soo Ahn ◽  
Sam Nyung Yi ◽  
...  
Keyword(s):  
Pole Figure ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Initial Growth

Hydride vapor phase epitaxy growth of GaN on sapphire with ZnO buffer layers

2002 ◽  
Vol 74 (4) ◽  
pp. 537-540 ◽  
Author(s):  
S. Gu ◽  
R. Zhang ◽  
Y. Shi ◽  
Y. Zheng ◽  
L. Zhang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Buffer Layers

Growth of GaN on Buffer Layers with Different Polarities by Hydride Vapor-Phase Epitaxy

2007 ◽  
Vol 36 (4) ◽  
pp. 436-441 ◽  
Author(s):  
Kai Qiu ◽  
X.H. Li ◽  
F. Zhong ◽  
Z.J. Yin ◽  
X.D. Luo ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Buffer Layers

Surface Preparation and Growth Condition Dependence of Cubic GaN Layer on (001) GaAs by Hydride Vapor Phase Epitaxy

1997 ◽  
Vol 468 ◽  
Author(s):  
H. Tsuchiya ◽  
K. Sunaba ◽  
S. Yonemura ◽  
T. Suemasu ◽  
F. Hasegawa
Keyword(s):  
Vapor Phase ◽  
Surface Preparation ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
Condition Dependence ◽  
X Ray Diffraction ◽  
Cubic Gan ◽  
The Will

ABSTRACTGaN buffer layers and thick GaN layers were grown on (001) GaAs substrates by hydride vapor phase epitaxy. The ratio of cubic to hexagonal components in the grown layer was estimated from the ratio of the integrated X-ray diffraction intensities of the cubic (002) plane and hexagonal (1011) planes measured by w scan. The optimum growth conditions were thermal cleaning at 600°C, growth temperature of 500°C and thickness of 30 nm for the buffer layer, and the Will ratio of 300 for thick GaN growth at 800°C. Cubic component in the layer grown with those conditions was more than 85% and strong cubic photoluminescence emission was observed at 377 nm (3.28 eV).

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