Heat and mass transfer simulation of SiC boule growth by sublimation

2000 ◽  
Vol 640 ◽  
Author(s):  
Michel Pons ◽  
Cecile Moulin ◽  
Jean-Marc Dedulle ◽  
Alexandre Pisch ◽  
Bernard Pelissier ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Mass Transfer ◽  
Temperature Field ◽  
Growth Process ◽  
Radiative Heat ◽  
Species Transport ◽  
Density Of Dislocations ◽  
Heterogeneous Reactivity ◽  
Mechanical Approach ◽  
Sublimation Growth

ABSTRACTAn accurate modelling and simulation of the sublimation growth process needs a software taking into account a multitude of highly coupled phenomena: fluid mechanics, convective, conductive and radiative heat transfer, electromagnetic, multicomponent species transport, homogeneous and heterogeneous reactivity and finally thermal and transport databases. The objective of this paper is to combine modelling trends with experimental results to propose explanations and solutions to growth problems. Finally, a simple and generic mechanical approach will show the relations between the density of dislocations and the temperature field.

Coupling of conductive, convective and radiative heat transfer in Czochralski crystal growth process

2002 ◽  
Vol 25 (4) ◽  
pp. 570-576 ◽  
Author(s):  
Andrzej J Nowak ◽  
Ryszard A Białecki ◽  
Adam Fic ◽  
Gabriel Wecel ◽  
Luiz C Wrobel ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Crystal Growth ◽  
Radiative Heat Transfer ◽  
Growth Process ◽  
Radiative Heat ◽  
Czochralski Crystal Growth ◽  
Crystal Growth Process

Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals

1996 ◽  
Vol 423 ◽  
Author(s):  
R. Eckstein ◽  
D. Hofmann ◽  
Y. Makarov ◽  
St. G. Müller ◽  
G. Pensl ◽  
...  
Keyword(s):  
Mass Transfer ◽  
Silicon Carbide ◽  
Optical Properties ◽  
Growth Process ◽  
Numerical Models ◽  
Chemical Processes ◽  
Bulk Crystals ◽  
Electrical And Optical Properties ◽  
Bulk Growth ◽  
Sublimation Growth

AbstractExperimental and numerical analysis have been performed on the sublimation growth process of SiC bulk crystals. Crystallographic, electrical and optical properties of the grown silicon carbide (SIC) crystals have been evaluated by various characterization techniques. Numerical models for the global simulation of SiC bulk growth including heat and mass transfer and chemical processes are applied and experimentally verified.

Modeling Analysis of Temperature Field and Species Transport Inside the System for Sublimation Growth of SiC in Tantalum Container

1998 ◽  
Vol 264-268 ◽  
pp. 61-64 ◽  
Author(s):  
Yu.E. Egorov ◽  
A.O. Galyukov ◽  
S.G. Gurevich ◽  
Yuri N. Makarov ◽  
E.N. Mokhov ◽  
...  
Keyword(s):  
Temperature Field ◽  
Species Transport ◽  
Modeling Analysis ◽  
Sublimation Growth
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