Structural and Spectroscopic Study of Manganese Silicide Islands on Silicon

2001 ◽  
Vol 704 ◽  
Author(s):  
Miyoko Tanaka ◽  
Qi Zhang ◽  
Masaki Takeguchi ◽  
Kazuo Furuya
Keyword(s):  
Spectroscopic Study ◽  
Growth Mechanism ◽  
Subsequent Annealing ◽  
Orientation Relationships ◽  
Metallic Character ◽  
Moiré Fringes ◽  
Manganese Silicide

AbstractThe Mn deposited clean Si (111) substrates were examined with UHV-TEM and STM that are part of an UHV-TEM/STM integrated characterization system. The Mn deposition with coverages of 5-20 ML followed by annealing at 673 K formed MnSi islands with Moire fringes. They showed metallic character. Subsequent annealing at 873 K dissipated the islands instead of transforming them into MnSi1.7. The re-deposition of Mn and re-annealing at 473 K succeeded to transform MnSi islands into MnSi1.7. The islands had several orientation relationships with substrate Si, and were semiconducting. The growth mechanism of MnSi1.7 is inferred.

Moire Fringes on Precipitates in Quenched and Aged Beryllium

1968 ◽  
Vol 26 ◽  
pp. 426-427
Author(s):  
F. J. Fraikor ◽  
A. W. Brewer
Keyword(s):  
Ternary Phase ◽  
Volume Fraction ◽  
Age Hardening ◽  
Orientation Relationships ◽  
Solute Content ◽  
Moiré Fringes ◽  
Moire Patterns ◽  
Total Volume Fraction ◽  
Diffraction Patterns ◽  
Moiré Patterns

A number of investigators have examined moire patterns on precipitate particles in various age-hardening alloys. For example, Phillips has analyzed moire fringes at cobalt precipitates in copper and Von Heimendahl has reported on moire fringes in the system Al-Au. Recently, we have observed moire patterns on impurity precipitates in beryllium quenched in brine from 1000°C and aged at various temperatures in the range of 500-800°C. This heat treatment of beryllium rolled from vacuum cast ingots produces the precipitation of both an fee ternary phase, AlFeBe4, and an hcp binary phase, FeBe11. However, unlike a typical age-hardening alloy, the solute content of this material is low (less than 1000 ppm of Fe and 600 ppm of Al) and hence the total volume fraction of precipitates is small. Therefore there is some difficulty in distinguishing the precipitates and their orientation relationships with the beryllium matrix since the weak precipitate spots generally do not appear on the diffraction patterns.

scholarly journals An atomic resolution study of precipitates in an Al-Ge Alloy

1986 ◽  
Vol 44 ◽  
pp. 538-539
Author(s):  
U. Dahmen ◽  
C. Nelson ◽  
K.H. Westmacott
Keyword(s):  
Cross Section ◽  
Atomic Resolution ◽  
Face Centered Cubic ◽  
Orientation Relationships ◽  
Cross Sectional ◽  
The Past ◽  
Moiré Fringes ◽  
Typical Aspect ◽  
Face Centered ◽  
Sectional Shape

The difficulty of precipitating germanium in dilute aluminum-germanium alloys is due to a large difference in crystal structures (face-centered cubic and diamond cubic) accompanied by a substantial volume expansion of 36%. A great variety of precipitate morphologies and orientation relationships are observed. A frequently found morphology is that of <100> needles. By selected area diffraction and Moire fringes it has been established that <100> Al and <110> Ge are parallel along the needle axis. The typical aspect ratio of about 100 has made it difficult in the past to investigate the cross-sectional shape and internal structure of these needles, although some indications of internal twinning were found in plates. in the present work, the Berkeley Atomic Resolution Microscope was used to examine needles in cross section by imaging along the <110> Ge <100> Al needle axis.

The Use of Moiré Patterns in TEM Images to Measure Precipitate Composition in Al-Si-Ge Alloys

2001 ◽  
Vol 7 (S2) ◽  
pp. 238-239
Author(s):  
V. Radmilovic ◽  
D. Mitlin ◽  
S. Hinderberger ◽  
U. Dahmen
Keyword(s):  
Elastic Interaction ◽  
Lattice Parameter ◽  
Multiphase System ◽  
Orientation Relationships ◽  
Precipitate Crystal ◽  
Large Matrix ◽  
Moiré Fringes ◽  
Moire Patterns ◽  
Lattice Images ◽  
Moiré Patterns

Moiré patterns are commonly formed in multiphase system when diffracting planes of similar spacing and orientation lead to interference effects. They can be used experimentally to evaluate the stress distribution in materials [1], to analyze orientation relationships and latttice strain in diffraction contrast microscopy, or, combined with the related geometrical phase technique, to analyze displacements in high resolution lattice images [2,3]. The interpretation of moiré fringes is often not straightforward due to the elastic interaction between the crystals at the interface and the dynamical nature of electron diffraction [4]. However, if the two lattices are fully relaxed, or if a small precipitate crystal is embedded in a large matrix, moiré patterns can give a simple and direct measure of orientation and lattice constants. in the present work, the moiré technique has been applied to the quantitative analysis of lath-shaped Ge or Ge-Si precipitates in Al with the aim to determine the composition (the Si:Ge ratio) from the lattice parameter indicated by the moiré fringes.

Manganese silicide single crystal and films deposited on Si(111): A comparative spectroscopic study

2007 ◽  
Vol 601 (18) ◽  
pp. 4066-4073 ◽  
Author(s):  
E. Carleschi ◽  
E. Magnano ◽  
M. Zangrando ◽  
F. Bondino ◽  
A. Nicolaou ◽  
...  
Keyword(s):  
Single Crystal ◽  
Spectroscopic Study ◽  
Manganese Silicide

Effects of Heat Treatment on Growth of BaSi2 Film on Si(111) Substrates

2010 ◽  
Vol 663-665 ◽  
pp. 1273-1276
Author(s):  
Zi Yi Yang ◽  
Zheng Tong Hao ◽  
Quan Xie
Keyword(s):  
Heat Treatment ◽  
Magnetron Sputtering ◽  
Growth Mechanism ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Morphological Features ◽  
Subsequent Annealing

Semiconducting orthorhombic BaSi2 films were synthesized on Si(111) substrates using magnetron sputtering (MS) and subsequent annealing by interdiffusion between the deposited Ba film and Si(111) substrate. The structural and morphological features of the result films are analysed. The growth mechanism and the evolution of the silicides are discussed. The effects of annealing temperature and annealing time on the growth of the BaSi2 film are studied.

Controlled physical properties and growth mechanism of manganese silicide nanorods

2021 ◽  
Vol 851 ◽  
pp. 156693
Author(s):  
Najwa binti Hamzan ◽  
Calvin Yi Bin Ng ◽  
Rad Sadri ◽  
Min Kai Lee ◽  
Lieh-Jeng Chang ◽  
...  
Keyword(s):  
Physical Properties ◽  
Growth Mechanism ◽  
Manganese Silicide

scholarly journals Combined spectroscopic study on the growth mechanism of Diphosphine-stabilized Gold Nanoclusters

2016 ◽  
Vol 712 ◽  
pp. 012108
Author(s):  
Jie Bao ◽  
Lina Yang ◽  
Wei Liu ◽  
Yuanyuan Huang ◽  
Ting Huang ◽  
...  
Keyword(s):  
Spectroscopic Study ◽  
Growth Mechanism ◽  
Gold Nanoclusters

scholarly journals Growth mechanism and Raman spectroscopic study of “interlinked-cone" shaped CNx nanotubes

2003 ◽  
Vol 52 (1) ◽  
pp. 237
Author(s):  
Ding Pei ◽  
Liang Er-Jun ◽  
Zhang Hong-Rui ◽  
Liu Yi-Zhen ◽  
Liu Hui ◽  
...  
Keyword(s):  
Spectroscopic Study ◽  
Growth Mechanism ◽  
Raman Spectroscopic ◽  
Raman Spectroscopic Study
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