Effects of Heat Treatment on Growth of BaSi2 Film on Si(111) Substrates
2010 ◽
Vol 663-665
◽
pp. 1273-1276
Keyword(s):
Semiconducting orthorhombic BaSi2 films were synthesized on Si(111) substrates using magnetron sputtering (MS) and subsequent annealing by interdiffusion between the deposited Ba film and Si(111) substrate. The structural and morphological features of the result films are analysed. The growth mechanism and the evolution of the silicides are discussed. The effects of annealing temperature and annealing time on the growth of the BaSi2 film are studied.
1969 ◽
Vol 184
(1)
◽
pp. 875-884
◽
Keyword(s):
2007 ◽
Vol 539-543
◽
pp. 305-310
Keyword(s):
1974 ◽
Vol 32
◽
pp. 454-455
Keyword(s):
2011 ◽
Vol 21
(4)
◽
pp. 770-776
◽