scholarly journals Filling Single Wall Carbon Nanotubes with Metal Chloride and Metal Nanowires and Imaging with Scanning Transmission Electron Microscopy

2001 ◽  
Vol 706 ◽  
Author(s):  
Satishkumar B. Chikkannanavar ◽  
Andreas Taubert ◽  
David E. Luzzi

AbstractNanowires of magnetic metals (Ho, Gd) have been synthesized inside the hollow interior of single wall carbon nanotubes by the sealed-tube reaction. Amongst the d- and f-series metal chlorides investigated in this study, HoCl3 and GdCl3 fill the SWNTs to a significantly higher extent than FeCl2 and CoCl2. HoCl3 and GdCl3 nanowires have been transformed into the respective metal nanowires via the reduction of the chloride nanowires. The nanowires have been imaged using high-resolution transmission electron microscopy and scanning transmission electron microscopy (STEM). X-ray energy dispersive spectroscopy carried out in conjunction with STEM confirmed the presence of metal chloride and metal nanowires.

Author(s):  
F. Khoury ◽  
L. H. Bolz

The lateral growth habits and non-planar conformations of polyethylene crystals grown from dilute solutions (<0.1% wt./vol.) are known to vary depending on the crystallization temperature.1-3 With the notable exception of a study by Keith2, most previous studies have been limited to crystals grown at <95°C. The trend in the change of the lateral growth habit of the crystals with increasing crystallization temperature (other factors remaining equal, i.e. polymer mol. wt. and concentration, solvent) is illustrated in Fig.l. The lateral growth faces in the lozenge shaped type of crystal (Fig.la) which is formed at lower temperatures are {110}. Crystals formed at higher temperatures exhibit 'truncated' profiles (Figs. lb,c) and are bound laterally by (110) and (200} growth faces. In addition, the shape of the latter crystals is all the more truncated (Fig.lc), and hence all the more elongated parallel to the b-axis, the higher the crystallization temperature.


2000 ◽  
Vol 638 ◽  
Author(s):  
Alan D.F. Dunbar ◽  
Matthew P. Halsall ◽  
Uschi Bangert ◽  
Alan Harvey ◽  
Philip Dawson ◽  
...  

AbstractWe report optical and scanning transmission electron microscopy studies of germanium dots grown on silicon. In an attempt to control the self-organized growth process and promote dot size uniformity the dot layers were grown on a 4.5nm Si0.6Ge0.4 alloy template layer. Photoluminescence results indicate the formation of carrier confining Ge rich islands, whilst Raman scattering results indicate the presence of an alloy throughout the structures formed. The samples were studied in the UK high resolution scanning transmission electron microscopy facility at Liverpool, UK. Energy dispersive analysis of individual line scans through the sample show that the structures are composed of an alloy throughout with an asymmetric distribution of Germanium in the dots and in the wetting layer close to the dots. We discuss the results in the light of the proposed growth mode for these dots and conclude that attempts to manipulate the composition of these dots during growth may be problematic due to the self-organized nature of their formation.


2010 ◽  
Vol 16 (S2) ◽  
pp. 1116-1117
Author(s):  
PJ Kempen ◽  
AS Thakor ◽  
CL Zavaleta ◽  
SS Gambhir ◽  
R Sinclair

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.


2010 ◽  
Vol 16 (S2) ◽  
pp. 80-81 ◽  
Author(s):  
SD Findlay ◽  
N Shibata ◽  
H Sawada ◽  
E Okunishi ◽  
Y Kondo ◽  
...  

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.


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