Residual Ion Implantation Damage at Source/Drain Junctions of Excimer Laser Annealed Polycrystalline Silicon Thin Film Transistor

2002 ◽  
Vol 715 ◽  
Author(s):  
Kee-Chan Park ◽  
Jae-Shin Kim ◽  
Woo-Jin Nam ◽  
Min-Koo Han
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Layer ◽  
Silicon Thin Film ◽  
Cross Sectional ◽  
Implantation Damage ◽  
Transmission Electron

AbstractResidual ion implantation damage at source/drain junctions of excimer laser annealed polycrystalline silicon (poly-Si) thin film transistor (TFT) was investigated by high-resolution transmission electron microscopy (HR-TEM). Cross-sectional TEM observation showed that XeCl excimer laser (λ=308 nm) energy decreased considerably at the source/drain junctions of top-gated poly-Si TFT due to laser beam diffraction at the gate electrode edges and that the silicon layer amorphized by ion implantation, was not completely annealed at the juncions. The HR-TEM observation showed severe lattice disorder at the junctions of poly-Si TFT.

Threshold voltage of excimer-laser-annealed polycrystalline silicon thin-film transistors

2000 ◽  
Vol 76 (17) ◽  
pp. 2442-2444 ◽  
Author(s):  
C. T. Angelis ◽  
C. A. Dimitriadis ◽  
F. V. Farmakis ◽  
J. Brini ◽  
G. Kamarinos ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film

A Center-Offset Polycrystalline-Silicon Thin-Film Transistor With ${\rm n}^{+}$ Amorphous-Silicon Contacts

2009 ◽  
Vol 30 (1) ◽  
pp. 36-38 ◽  
Author(s):  
J. H. Oh ◽  
D. H. Kang ◽  
W. H. Park ◽  
J. Jang ◽  
Y. J. Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film

A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage

2003 ◽  
Vol 42 (Part 1, No. 3) ◽  
pp. 1164-1167 ◽  
Author(s):  
Du-Zen Peng ◽  
Ting-Chang Chang ◽  
Chin-Fu Liu ◽  
Ping-Hung Yeh ◽  
Po-Tsun Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Breakdown Voltage ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film

Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain

2002 ◽  
Vol 81 (25) ◽  
pp. 4763-4765 ◽  
Author(s):  
Du Zen Peng ◽  
Ting-Chang Chang ◽  
Po-Sheng Shih ◽  
Hsiao-Wen Zan ◽  
Tiao-Yuan Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film

Study on Light Induced Leakage Current Related to Amorphous Silicon TFT Design

2007 ◽  
Vol 124-126 ◽  
pp. 259-262
Author(s):  
Jae Hong Jeon ◽  
Kang Woong Lee
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Leakage Current ◽  
Thin Film Transistor ◽  
Silicon Layer ◽  
Gate Electrode ◽  
Silicon Thin Film ◽  
Pattern Design ◽  
Conventional Design ◽  
The One

We investigated the effect of amorphous silicon pattern design regarding to light induced leakage current in amorphous silicon thin film transistor. In addition to conventional design, where amorphous silicon layer is protruding outside the gate electrode, we designed and fabricated amorphous silicon thin film transistors in another two types of bottom gated structure. The one is that the amorphous silicon layer is located completely inside the gate electrode and the other is that the amorphous silicon layer is protruding outside the gate electrode but covered completely by the source and drain electrode. Measurement of the light induced leakage current caused by backlight revealed that the design where the amorphous silicon is located inside the gate electrode was the most effective however the last design was also effective in reducing the leakage current about one order lower than that of the conventional design.

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