Data- and Gate-Line-Sharing Pixel Structure and Driving Method for Low-Cost Polycrystalline Silicon Thin Film Transistor Liquid Crystal Displays

2007 ◽  
Vol 46 (3B) ◽  
pp. 1375-1379 ◽  
Author(s):  
Young-Ja Kim ◽  
Il-Hun Jeong ◽  
Han-Jun Kim ◽  
Oh-Kyong Kwon
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Polycrystalline Silicon ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Liquid Crystal Displays ◽  
Silicon Thin Film

A 10×10 Polycrystalline-Silicon Thin-Film Transistor Matrix for Liquid-Crystal Display

1983 ◽  
Vol 22 (S1) ◽  
pp. 497 ◽  
Author(s):  
Makoto Matsui ◽  
Jun-ichi Owada ◽  
Yasuhiro Shiraki ◽  
Eiichi Maruyama ◽  
Hideaki Kawakami
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Polycrystalline Silicon ◽  
Liquid Crystal Display ◽  
Thin Film Transistor ◽  
Silicon Thin Film

A 10X10 Polycrystalline-Silicon Thin-Film Transistor Matrix for Liquid-Crystal Display

1982 ◽  
Author(s):  
M. Matsui ◽  
J. Owada ◽  
Y. Shiraki ◽  
E. Maruyama ◽  
H. Kawakami
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Polycrystalline Silicon ◽  
Liquid Crystal Display ◽  
Thin Film Transistor ◽  
Silicon Thin Film

Low-Voltage Driven P-Type Polycrystalline Silicon Thin-Film Transistor Integrated Gate Driver Circuits for Low-Cost Chip-on-Glass Panel

2006 ◽  
Vol 45 (5B) ◽  
pp. 4389-4391 ◽  
Author(s):  
Woo-Jin Nam ◽  
Hye-Jin Lee ◽  
Hee-Sun Shin ◽  
Sang-Geun Park ◽  
Min-Koo Han
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Low Voltage ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Glass Panel ◽  
Silicon Thin Film ◽  
Gate Driver ◽  
P Type

Large Scale and Large Area Amorphous Silicon Thin Film Transistor Arrays for Active Matrix Liquid Crystal Displays

1987 ◽  
Vol 95 ◽  
Author(s):  
H. Miki ◽  
S. Kawamoto ◽  
T. Horikawa ◽  
T. Maejima ◽  
H. Sakamoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Amorphous Silicon ◽  
Etching Rate ◽  
Thin Film Transistor ◽  
Liquid Crystal Displays ◽  
Silicon Nitride Film ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Matrix Liquid

AbstractThe preparation and properties of hydrogenated amorphous silicon thin film transistor arrays for active matrix liquid crystal displays are reported. The effect of amorphous silicon film preparation conditions on the field effect mobility of thin film transistors was investigated. The dry etching rate of silicon nitride film was studied.The thin film transistor arrays have 408 ˜ 640 transistors on the first version and 450 ˜ 640 ˜ 3 transistors on the second version. The liquid crystal panel fabricated using the first version arrays showed good characteristics.

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

A Center-Offset Polycrystalline-Silicon Thin-Film Transistor With ${\rm n}^{+}$ Amorphous-Silicon Contacts

2009 ◽  
Vol 30 (1) ◽  
pp. 36-38 ◽  
Author(s):  
J. H. Oh ◽  
D. H. Kang ◽  
W. H. Park ◽  
J. Jang ◽  
Y. J. Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film
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