Self-Induced Photon Absorption by Screening of the Electric Fields in Nitride-based Quantum Wells

2002 ◽  
Vol 743 ◽  
Author(s):  
S. Kalliakos ◽  
P. Lefebvre ◽  
T. Taliercio ◽  
B. Gil
Keyword(s):  
Absorption Coefficient ◽  
Quantum Wells ◽  
Electric Fields ◽  
Optical Transition ◽  
Optical Excitation ◽  
Blue Shift ◽  
Photon Absorption ◽  
Group Iii ◽  
Excitation Laser ◽  
Group Iii Nitride

ABSTRACTWe have calculated the change of interband absorption spectra of a quantum well based on hexagonal group-III nitride semiconductors under photo-injection of high densities of electron-hole pairs. The screening of internal electric fields by such optical excitation is known to blue-shift and reinforce the ground-state optical transition. Due to the large values of densities of states and of internal fields, we predict novel properties that rather concern optical absorption via transitions between excited states. The absorption coefficient can be strongly enhanced by the optical excitation itself, in this particular spectral region, yielding the possibility for self-induced absorption properties. In other words, if sufficiently intense, an excitation laser can increase the absorption coefficient of the system at its own wavelength, thus providing a strong nonlinear optical response. Finally, we briefly discuss the potential application of these optical phenomena.

Donor binding energies in group III-nitride-based quantum wells: influence of internal electric fields

2001 ◽  
Vol 82 (1-3) ◽  
pp. 221-223 ◽  
Author(s):  
A Morel ◽  
P Lefebvre ◽  
T Taliercio ◽  
M Gallart ◽  
B Gil ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Binding Energies ◽  
Group Iii ◽  
Group Iii Nitride

Reduction of Carrier In-Plane Mobility in Group-III Nitride Based Quantum Wells: The Role of Internal Electric Fields

2001 ◽  
Vol 183 (1) ◽  
pp. 61-66 ◽  
Author(s):  
M. Gallart ◽  
P. Lefebvre ◽  
A. Morel ◽  
T. Taliercio ◽  
B. Gil ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Group Iii ◽  
Group Iii Nitride

Nonpolar and Semipolar Group III Nitride-Based Materials

MRS Bulletin ◽  
2009 ◽  
Vol 34 (5) ◽  
pp. 304-312 ◽  
Author(s):  
J. S. Speck ◽  
S. F. Chichibu
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Spatial Separation ◽  
Hexagonal Wurtzite Structure ◽  
Growth Direction ◽  
Wurtzite Structure ◽  
Internal Electric Field ◽  
Axis Orientation ◽  
Group Iii ◽  
Group Iii Nitride

AbstractGaN and its alloys with InN and AlN are materials systems that have enabled the revolution in solid-state lighting and high-power/high-frequency electronics. GaN-based materials naturally form in a hexagonal wurtzite structure and are naturally grown in a (0001) c-axis orientation. Because the wurtzite structure is polar, GaN-based heterostructures have large internal electric fields due to discontinuities in spontaneous and piezoelectric polarization. For optoelectronic devices, such as light-emitting diodes and laser diodes, the internal electric field is generally deleterious as it causes a spatial separation of electron and hole wave functions in the quantum wells, which, in turn, likely decreases efficiency. Growth of GaN-based heterostructures in alternative orientations, which have reduced (semipolar orientations) or no polarization (nonpolar) in the growth direction, has been a major area of research in recent years. This issue highlights many of the key developments in nonpolar and semipolar nitride materials and devices.

Exciton localization in group-III nitride quantum wells

1999 ◽  
Vol 59 (15) ◽  
pp. 9783-9786 ◽  
Author(s):  
V. I. Litvinov ◽  
M. Razeghi
Keyword(s):  
Quantum Wells ◽  
Group Iii ◽  
Exciton Localization ◽  
Group Iii Nitride

6.4.3 Group III–nitride quantum wells

2013 ◽  
pp. 120-122
Author(s):  
C. Höfling ◽  
C. Schneider ◽  
A. Forchel
Keyword(s):  
Quantum Wells ◽  
Group Iii ◽  
Group Iii Nitride

Screening of built-in electric fields in group III-nitride laser diodes observed by means of hydrostatic pressure

2005 ◽  
Vol 2 (3) ◽  
pp. 1019-1022 ◽  
Author(s):  
G. Franssen ◽  
T. Suski ◽  
P. Perlin ◽  
R. Bohdan ◽  
A. Bercha ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Electric Fields ◽  
Laser Diodes ◽  
Group Iii ◽  
Group Iii Nitride ◽  
Nitride Laser

Semipolar III Nitride Semiconductors: Crystal Growth, Device Fabrication, and Optical Anisotropy

MRS Bulletin ◽  
2009 ◽  
Vol 34 (5) ◽  
pp. 334-340 ◽  
Author(s):  
Mitsuru Funato ◽  
Yoichi Kawakami
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Optical Anisotropy ◽  
Optical Transition ◽  
Transition Probability ◽  
Device Fabrication ◽  
Optical Polarization ◽  
Polarization Anisotropy ◽  
Light Emitters ◽  
Novel Applications

AbstractSemipolar InGaN/GaN quantum wells (QWs) are quite attractive as visible light emitters. One of the reasons is that a better optical transition probability is expected because of weaker internal electric fields, compared to conventional polar QWs. In addition, in-plane optical polarization anisotropy, which is absent in conventional QWs, is another relevant property because it affects device design and also may provide a means for novel applications. We revealed that the in-plane optical anisotropy in semipolar QWs switched from one direction perpendicular to the [0001] crystal axis to the perpendicular direction as the In composition increases. This is a property unique to semipolar QWs and enables, for example, to make cavity mirrors of laser diodes by cleavage. In this article, we describe the concept of semipolar planes and fabrication of high-quality epitaxial films for semipolar QWs. Furthermore, we discuss device fabrication and optical polarization anisotropy.

Polarization Insensitivity in Interdiffused, Strained InGaAs/InP Quantum Wells

1996 ◽  
Vol 450 ◽  
Author(s):  
Joseph Micallef ◽  
James L. Borg ◽  
Wai-Chee Shiu
Keyword(s):  
Absorption Coefficient ◽  
Quantum Wells ◽  
Error Function ◽  
Fundamental Absorption Edge ◽  
Group V ◽  
Group Iii ◽  
Interdiffusion Process ◽  
Excitonic Transition ◽  
Polarization Insensitive ◽  
Polarization Insensitivity

ABSTRACTTheoretical results are presented showing how quantum well disordering affects the TE and TM absorption coefficient spectra of In0.53Ga0.47As/InP single quantum wells. An error function distribution is used to model the constituent atom composition after interdiffusion. Different interdiffusion rates on the group V and group III sublattices are considered resulting in a strained structure. With a suitable interdiffusion process the heavy hole and light hole ground state, excitonic transition energies merge and the absorption coefficient spectra near the fundamental absorption edge become polarization insensitive. The results also show that this polarization insensitivity can persist with the application of an electric field, which is of considerable interest in waveguide modulators.

Enhancement of localization and confinement effects in quaternary group-III nitride multi-quantum wells on SiC substrate

2005 ◽  
Vol 202 (4) ◽  
pp. 642-646 ◽  
Author(s):  
S. Anceau ◽  
P. Lefebvre ◽  
T. Suski ◽  
L. Konczewicz ◽  
H. Hirayama ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Confinement Effects ◽  
Group Iii ◽  
Group Iii Nitride
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