Positive Temperature Coefficient of Resistance in MOCVD (Ba0.75Sr0.25)Ti1+yO3+z Films

2002 ◽  
Vol 748 ◽  
Author(s):  
S. Saha ◽  
D. Y. Kaufman ◽  
S. K. Streiffer ◽  
R. A. Erck ◽  
O. Auciello
Keyword(s):  
Temperature Coefficient ◽  
Weak Field ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Temperature Coefficient Of Resistance ◽  
Current Voltage ◽  
Ptcr Effect ◽  
Bst Films ◽  
Current Voltage Characteristics ◽  
Increasing Temperature

ABSTRACTThe leakage and dielectric properties of a thickness series (90–480 nm) of {100} fiber-textured MOCVD (Ba0.75Sr0.25)Ti1+yO3+z (BST) thin films on Pt/SiO2/Si were investigated. The temperature and voltage dependence of the permittivity were consistent with previous observations, where thinner films demonstrated a suppressed temperature and electric field response that transitioned to a more bulk-like response with increasing film thickness. The current-voltage characteristics showed two distinct regimes. At low fields the current displayed weak field dependence and a monotonic increase with increasing temperature. In contrast, positive temperature coefficient of resistance (PTCR) was observed in the high-field leakage current behavior. The PTCR behavior was more pronounced for thicker BST films. Factors contributing to the observed PTCR effect are outlined and contrasted with the description for bulk BaTiO3 ceramics.

scholarly journals Особенности токопереноса в пленках поливинилового спирта с включениями многостенных углеродных нанотрубок на подложках Si

2020 ◽  
Vol 46 (12) ◽  
pp. 26
Author(s):  
С.В. Васин ◽  
M.C. Ефимов ◽  
В.А. Сергеев
Keyword(s):  
Reverse Bias ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Temperature Coefficient Of Resistance ◽  
Tunneling Mechanism ◽  
Planar Structures ◽  
Current Voltage ◽  
Multi Walled Carbon Nanotubes ◽  
Current Voltage Characteristics ◽  
Walled Carbon Nanotubes

It is shown that aluminum / polyvinyl alcohol (PVA) with the inclusion of multi-walled carbon nanotubes (MWCNTs) / silicon planar structures demonstrate rectifying properties and their current-voltage characteristics are asymmetric and non-linear. With direct bias, the structures have a positive temperature coefficient of resistance (TCR) in the temperature range of 270-350 K, while the structures without MWCNTs exhibit negative TCR. Under reverse bias, the studied structures with MWCNTs showed TCS changing sign from negative to positive. To explain the obtained dependences, the tunneling mechanism of current transfer is considered.

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