scholarly journals Особенности токопереноса в пленках поливинилового спирта с включениями многостенных углеродных нанотрубок на подложках Si

Author(s):  
С.В. Васин ◽  
M.C. Ефимов ◽  
В.А. Сергеев

It is shown that aluminum / polyvinyl alcohol (PVA) with the inclusion of multi-walled carbon nanotubes (MWCNTs) / silicon planar structures demonstrate rectifying properties and their current-voltage characteristics are asymmetric and non-linear. With direct bias, the structures have a positive temperature coefficient of resistance (TCR) in the temperature range of 270-350 K, while the structures without MWCNTs exhibit negative TCR. Under reverse bias, the studied structures with MWCNTs showed TCS changing sign from negative to positive. To explain the obtained dependences, the tunneling mechanism of current transfer is considered.

2002 ◽  
Vol 748 ◽  
Author(s):  
S. Saha ◽  
D. Y. Kaufman ◽  
S. K. Streiffer ◽  
R. A. Erck ◽  
O. Auciello

ABSTRACTThe leakage and dielectric properties of a thickness series (90–480 nm) of {100} fiber-textured MOCVD (Ba0.75Sr0.25)Ti1+yO3+z (BST) thin films on Pt/SiO2/Si were investigated. The temperature and voltage dependence of the permittivity were consistent with previous observations, where thinner films demonstrated a suppressed temperature and electric field response that transitioned to a more bulk-like response with increasing film thickness. The current-voltage characteristics showed two distinct regimes. At low fields the current displayed weak field dependence and a monotonic increase with increasing temperature. In contrast, positive temperature coefficient of resistance (PTCR) was observed in the high-field leakage current behavior. The PTCR behavior was more pronounced for thicker BST films. Factors contributing to the observed PTCR effect are outlined and contrasted with the description for bulk BaTiO3 ceramics.


2001 ◽  
Vol 703 ◽  
Author(s):  
Gyu-Tae Kim ◽  
Jörg Muster ◽  
Marko Burghard ◽  
Siegmar Roth

ABSTRACTV2O5 nanofibers showed the rectifying current-voltage characteristics under an asymmetric contact configuration at room temperature, indicating the formation of a Schottky diode. The ideality factors as a Schottky diode were estimated to be 6.1 at the forward bias and 1.4 at the reverse bias. The larger current at the reverse bias defined by the negative voltage at the metal electrode may originate from the contribution of the tunneling via field emission or thermionic field emission. The ultimate geometric size of nanofibers enhances the influence of the tunneling mechanism and modifies the nano-scale Schottky diode, requiring more understanding in designing the nano-scale electronic devices with the metal contacts.


2020 ◽  
Vol 20 (4) ◽  
pp. 16-26
Author(s):  
Sudipta Sen ◽  
N. B. Manik

AbstractPresent work shows effect of 8 nm diameter and 30 nm diameter multi walled carbon nanotubes (MWCNT) on the barrier potential and trap concentration of Malachite Green (MG) dye based organic device. MWCNTs are basically a bundle of concentric single-walled carbon nanotubes with different diameters. In this work, ITO coated glass substrate and aluminium have been used as front electrode and back electrode respectively and the spin coating method is used to prepare the MG dye based organic device. It has been observed that both barrier potential and trap concentration are in correlation. Estimation of both these parameters has been done from current-voltage characteristics of the device to estimate the trap energy and the barrier potential of the device. Device turn-on voltage or the transition voltage is also calculated by using current-voltage characteristics. In presence of 8 nm diameter MWCNT, the transition voltage is reduced from 3.9 V to 2.37 V, the barrier potential is lowered to 0.97 eV from 1.12 eV and the trap energy is lowered to 0.028 eV from 0.046 eV whereas incorporation of 30 nm diameter MWCNT shows reduction of transition voltage from 3.9 V to 2.71 V and a reduction of barrier potential and trap concentration from 1.12 eV to 1.03 eV and from 0.046 eV to 0.035 eV respectively. Presence of both 8 nm diameter and 30 nm diameter MWCNT lowers trap energy approximately to 39% and 24% respectively and lowers barrier potential approximately to 13% and 8% respectively. Estimation of barrier potential is also done by Norde method which shows lowering of the value from 0.88 eV to 0.79 eV and from 0.88 eV to 0.84 eV in presence of both 8 nm and 30 nm diameter multi walled carbon nanotubes respectively. Calculation of barrier potential from both the I-V characteristics and Norde method are in unison with each other. Indication of enhancement of charge flow in the device can be ascribed to the truncated values of barrier potential and trap energy.


Sign in / Sign up

Export Citation Format

Share Document