Dynamic Contact Characteristics During Chemical Mechanical Polishing (CMP)

2003 ◽  
Vol 767 ◽  
Author(s):  
Wonseop Choi ◽  
Seung-Mahn Lee ◽  
Rajiv K. Singh
Keyword(s):  
Friction Force ◽  
Chemical Mechanical Polishing ◽  
Dynamic Contact ◽  
Mechanical Polishing ◽  
Force Measurements ◽  
Solids Loading ◽  
Silica Slurry ◽  
Contact Mechanism ◽  
Lateral Friction

AbstractIn chemical mechanical polishing (CMP), it is critical to understand dynamic contact at the pad-particles-wafer interface for desired CMP performance. The dynamic contact is dependent on process variables (platen velocity and down pressure) and particle characteristics (size and concentration), which in turn affect friction force. In this study, we have characterized the dynamic contact at the pad-particles-wafer interface as a function of platen velocity and down pressure. In situ lateral friction force measurements were carried out for silica slurry / sapphire wafer system in order to investigate the dynamic contact during polishing. As solids loading increases, the slope in the friction force vs. platen velocity curve changes from a negative to a positive value. Friction force increases with down pressure for different solids loading conditions. Consequently, friction force is determined as a function of down pressure and platen velocity, validating a dynamic contact mechanism during CMP.

Effect of pH on ceria–silica interactions during chemical mechanical polishing

2005 ◽  
Vol 20 (5) ◽  
pp. 1139-1145 ◽  
Author(s):  
Jeremiah T. Abiade ◽  
Wonseop Choi ◽  
Rajiv K. Singh
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Force Measurements ◽  
X Ray ◽  
Force Microscopy ◽  
Substrate Interaction ◽  
Atomic Force ◽  
Silica Removal

To understand the ceria–silica chemical mechanical polishing (CMP) mechanisms, we studied the effect of ceria slurry pH on silica removal and surface morphology. Also, in situ friction force measurements were conducted. After polishing; atomic force microscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy were used to quantify the extent of the particle–substrate interaction during CMP. Our results indicate the silica removal by ceria slurries is strongly pH dependent, with the maximum occurring near the isoelectric point of the ceria slurry.

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

2008 ◽  
Vol 600-603 ◽  
pp. 831-834 ◽  
Author(s):  
Joon Ho An ◽  
Gi Sub Lee ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Jung Doo Seo ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Diamond Particles ◽  
Average Grain Size ◽  
Silica Slurry ◽  
Sic Wafer

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.

Colloidal Silica based High Selectivity Shallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP) Slurry

2005 ◽  
Vol 867 ◽  
Author(s):  
Kyoung-Ho Bu ◽  
Brij M. Moudgil
Keyword(s):  
Silicon Nitride ◽  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Sodium Dodecyl ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Shallow Trench Isolation ◽  
Pattern Size ◽  
Trench Isolation ◽  
Silica Slurry

AbstractAmong various properties of chemical mechanical polishing (CMP) slurry, selectivity plays a key role in global planarization of high density and small pattern size shallow trench isolation (STI) process. Lack of adequate selectivity can lead to defects such as dishing and erosion. To improve the selectivity of STI CMP process, CMP characteristics of silica and silicon nitride wafer were investigated using colloidal silica slurry as a function of slurry pH. Sodium dodecyl sulfate (SDS), an anionic surfactant, was added to increase the selectivity of the slurry. As a result, selectivity increased from 3 to 25. It was concluded that selective passivation layer formed on silicon nitride wafer surface at acidic slurry pH range was responsible for the observed selectivity increase. Adsorption characteristics of SDS on silica and silicon nitride were measured as a function of slurry pH and concentration of SDS. As indicated by zeta potential behavior under acidic pH conditions, SDS adsorption on silicon nitride was significantly higher han silica due to the electrostatic forces. Significantly higher SDS coating on silicone nitride seems to have resulted in lubrication layer leading to increased polishing selectivity.

Research on CMP Characteristics Attribute to Groove Size

2011 ◽  
Vol 189-193 ◽  
pp. 4112-4115 ◽  
Author(s):  
Yong Chang Guo ◽  
Young Kyun Lee ◽  
Hyun Seop Lee ◽  
Hae Do Jeong
Keyword(s):  
Size Effect ◽  
Friction Force ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Experimental Results ◽  
Groove Width ◽  
Significant Difference

Groove pads are used quite widely in chemical mechanical polishing (CMP), and groove size plays an important role in CMP characteristics. This study focuses on the investigation of the groove size effect using X-Y groove pads which are different with pitch and width. The first experiment shows the size effect on the polishing characteristics including material removal rate (MRR), within wafer non-uniformity (WIWNU) on 4 inch oxide blanket wafers for 60 seconds. The second experiment verifies the reason why MRR and WIWNU are different, by the calculation of slurry duration time (SDT) resulting from the change of friction force. All experimental results indicated that a significant difference of slurry flow attributed to groove width and pitch has an impressive influence on friction force, finally the MRR and WIWNU are affected by the groove size.

Effect of Process Parameters on Friction Force and Material Removal in Oxide Chemical Mechanical Polishing

2008 ◽  
Vol 47 (12) ◽  
pp. 8771-8778 ◽  
Author(s):  
Boumyoung Park ◽  
Hyunseop Lee ◽  
Youngjin Kim ◽  
Hyoungjae Kim ◽  
Haedo Jeong
Keyword(s):  
Friction Force ◽  
Process Parameters ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Polishing
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