Effect of Illumination on Organic Polymer Thin-Film Transistors

2003 ◽  
Vol 771 ◽  
Author(s):  
Michael C. Hamilton ◽  
Sandrine Martin ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Charge Carriers ◽  
Electrical Performance ◽  
Organic Polymer ◽  
Light Illumination ◽  
Polymer Thin Film ◽  
Channel Region ◽  
White Light Illumination

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.

Gate-planarized organic polymer thin film transistors

2002 ◽  
Vol 31 (5) ◽  
pp. 512-519 ◽  
Author(s):  
Sandrine Martin ◽  
Jeong-Yeop Nahm ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Polymer ◽  
Polymer Thin Film

Field-Effect Mobility of Organic Polymer Thin-Film Transistors

2004 ◽  
Vol 16 (23) ◽  
pp. 4699-4704 ◽  
Author(s):  
Michael C. Hamilton ◽  
Sandrine Martin ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Organic Polymer ◽  
Field Effect Mobility ◽  
Polymer Thin Film

Channel Layer Surface Modifications in a-Si:II thin Film Transistors With Oxide/Nitride Dielectric Layers

1992 ◽  
Vol 282 ◽  
Author(s):  
S. S. He ◽  
D. J. Stephens ◽  
R. W. Hamaker ◽  
G. Lucovsky
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Silicon Oxide ◽  
Surface Modifications ◽  
Electrical Performance ◽  
Layer Surface ◽  
Dielectric Layers ◽  
Channel Region ◽  
Post Deposition ◽  
Bottom Gate

ABSTRACTWe have fabricated normal and inverted staggered a-Si:H thin film transistors, TFTs, using silicon oxide/nitride double layer dielectrics. Significant improvements in the electrical performance of these TFTs have been obtained by integrating additional processingsteps into the usual processing cycles. These include; i) a pre-deposition nitridation ofthe a-Si:H surface for the top-gate devices, and ii) a post-deposition passivation of thea-Si:H surface (i.e., the back of the channel region) for the bottom-gate structures. Improvements in the electrical properties of the a-Si:H TFTs resulting from these additionalprocessing steps are discussed.

Source / drain contacts in organic polymer thin film transistors

2003 ◽  
Vol 771 ◽  
Author(s):  
Sandrine Martin ◽  
Michael C. Hamilton ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Quantitative Evaluation ◽  
Organic Electronics ◽  
Thin Film Transistors ◽  
Organic Polymer ◽  
Electrical Parameters ◽  
Polymer Thin Film

AbstractOrganic polymer based thin-film transistors (OP-TFTs) look very promising for flexible organic electronics. In this paper, we describe devices based on a gate-planarized structure and using spin-coated organic polymer. We have analyzed the role of the device source and drain contacts and we present data indicating Schottky behavior of the contacts in OP-TFTs. In addition, we describe a quantitative evaluation of the source drain series resistances and extract the OP-TFT intrinsic electrical parameters.

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Nanoscale ◽  
2021 ◽  
Author(s):  
Keonwon Beom ◽  
Jimin Han ◽  
Hyun-Mi Kim ◽  
Tae-Sik Yoon
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Synaptic Weight ◽  
Drain Current ◽  
Gate Insulator ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Wide Range

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...

Effects of Target Quality on Electrical Performance and Stability of In-Sn-Zn-O Thin-Film Transistors

2021 ◽  
Vol 42 (4) ◽  
pp. 529-532
Author(s):  
Zhendong Wu ◽  
Hengbo Zhang ◽  
Xiaolong Wang ◽  
Weisong Zhou ◽  
Lingyan Liang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrical Performance
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