Trapping of argon in ion beam deposited thin films of CNx Hy

2003 ◽  
Vol 792 ◽  
Author(s):  
Asghar N. Kayani ◽  
David C. Ingram
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Negative Bias ◽  
Substrate Bias ◽  
Flow Rates ◽  
Sputtering Deposition ◽  
Elemental Concentrations ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron ◽  
Negative Substrate Bias

ABSTRACTUnbalanced magnetron sputtering deposition of CNx Hy films has been performed with various levels of negative substrate bias and with different flow rates of nitrogen and hydrogen. Argon was used as a sputtering gas and formed the majority of the gas in the plasma. The elemental concentrations of the films were measured in samples deposited on glassy carbon with a 2.2 MeV of He beam used to perform simultaneous RBS and ERS. Argon was found to be trapped in the non-hydrogenated films to a level of up to ∼ 4.6 %. The concentration of argon increased for the films deposited under higher negative bias. With the introduction of hydrogen, argon trapping was first minimized and later completely eliminated, even at higher bias conditions, suggesting that the softness of the films brought on by hydrogenation also caused the films to be unable to trap argon during growth and thus showing that argon stability is dependent on burial below a surface of particular structural properties.

Nano-Structured TiN Thin Films Deposited by Single Ion Beam Reactive Sputtering

2007 ◽  
Vol 555 ◽  
pp. 303-308
Author(s):  
Ž. Bogdanov ◽  
N. Popović ◽  
M. Zlatanović ◽  
B. Goncić ◽  
Z. Rakočević ◽  
...  
Keyword(s):  
Thin Films ◽  
Partial Pressure ◽  
Ion Beam ◽  
Ion Source ◽  
Preferred Orientation ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Substrate Current ◽  
Tin Thin Films ◽  
Negative Substrate Bias

The reactive sputter deposition of TiN thin films onto glass substrate at the ambient temperature using a homemade broad beam argon ion source was investigated in order to deposit the films with nanostructural characteristics. While constant Ar beam energy of 2 keV was used, the N2 partial pressure and the substrate current, adjusted by different accelerator grid potentials (Vacc) were varied. A negative substrate bias voltage (100 V) was additionally applied. The TiN film structure was investigated by XRD and STM methods. All deposited films exhibited (220) preferred orientation, and the change in normalized peak intensity (I220/d), lattice spacing (d220) and full-with at half-maximum (FWHM) were investigated. As a result of higher energy bombardment with 100 V negative substrate bias, compared to the substrate current change with Vacc, nearly constant (220) peak broadening with the increase of N2 partial pressure was obtained. The measured grain diameter (STM and XRD) confirms that the grain size is less than 12 nm, and the (220) preferred orientation was disturbed but not destructed.

Pulsed Closed Field Unbalanced Magnetron Sputtering (P-CFUBMS) Deposited TiC/a:C Thin Films

2007 ◽  
Vol 561-565 ◽  
pp. 1177-1180 ◽  
Author(s):  
Jian Liang Lin ◽  
Brajendra Mishra ◽  
Malki Pinkas ◽  
John J. Moore
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Material Selection ◽  
Closed Field ◽  
Substrate Bias ◽  
Substrate Roughness ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron

TiC/a:C nanocomposite thin film has proven to be a worthy material selection as a thin film for tribological applications due to its low coefficient of friction, good wear resistance and high hardness. In the current study TiC/a:C thin films with carbon concentration near 55-62 at % were deposited via pulsed closed field unbalanced magnetron sputtering (P-CFUBMS) in pure argon atmosphere with different substrate bias voltages and onto 440C stainless steel substrate with different substrate roughness. It was found that the TiC/a:C film hardness and elastic modulus were increased from 18.5 GPa to 33.8 GPa by increasing the substrate bias from floating to -150 V. However higher substrate bias can also decrease the film tibological properties. The substrate roughness has a strong effect on TiC/a:C film wear behavior. When the Ra (Mean surface roughness values) is less than 110 nm, the COF values are in low range (0.18-0.28). Further increase the Ra value to above 300 nm will result in a higher COF (>0.33). Films deposited on higher surface roughness substrate need longer time to reach the sliding equilibrium state.

Substrate bias effects during R-F sputtering of Y-Ba-Cu-O films

1990 ◽  
Vol 5 (4) ◽  
pp. 677-679 ◽  
Author(s):  
A. J. Drehman ◽  
M. W. Dumais
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
Reactive Sputtering ◽  
Negative Bias ◽  
Superconducting Thin Films ◽  
Substrate Bias ◽  
Composition Control ◽  
Zero Resistance

Y-Ba-Cu-O films were made by R-F diode sputtering using a single oxide target. It was found that if a small negative bias is applied to the substrate, the etching associated with reactive sputtering is significantly reduced. This results in better composition control and uniformity, which are quite important for the formation of superconducting thin films. Films deposited on strontium titanate, when annealed in oxygen, become superconducting with zero resistance at 89 K.

Hydrogen-free carbon thin films prepared by unbalanced magnetron sputtering

2006 ◽  
Author(s):  
Junqi Xu ◽  
Lingxia Hang ◽  
Weiguo Liu ◽  
Huiqing Fan ◽  
Yingxue Xing
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Free Carbon ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron ◽  
Carbon Thin Films
Sign in / Sign up

Export Citation Format

Share Document