In-Situ Infrared (IR) Detection and Heating of the High Pressure Phase of Silicon during Scratching Test

2004 ◽  
Vol 841 ◽  
Author(s):  
Lei Dong ◽  
John A. Patten ◽  
Jimmie A. Miller
Keyword(s):  
High Pressure ◽  
Single Crystal Silicon ◽  
High Pressure Phase ◽  
Infrared Heating ◽  
Infrared Light ◽  
Simple Fact ◽  
Crystal Silicon ◽  
Ir Detection ◽  
Pressure Phase

ABSTRACTA novel method of in-situ detection of the high pressure phase transformation of silicon during dead-load scratching is described. The method is based on the simple fact that single crystal silicon is transparent to Infrared light while metallic materials are not. Infrared heating during scratching has been performed to thermally soften and deform the transformed metallic material and some promising results were obtained. The sample material used here is silicon, but the same approach can be applied to germanium and other materials, such as ceramics (SiC), which have appropriate optical properties.

In-Situ Infrared (IR) Detection and Heating of the High Pressure Phase of Silicon during Scratching Test

2004 ◽  
Vol 843 ◽  
Author(s):  
Lei Dong ◽  
John A. Patten ◽  
Jimmie A. Miller
Keyword(s):  
High Pressure ◽  
Single Crystal Silicon ◽  
High Pressure Phase ◽  
Infrared Heating ◽  
Infrared Light ◽  
Simple Fact ◽  
Crystal Silicon ◽  
Ir Detection ◽  
Pressure Phase

ABSTRACTA novel method of in-situ detection of the high pressure phase transformation of silicon during dead-load scratching is described. The method is based on the simple fact that single crystal silicon is transparent to Infrared light while metallic materials are not. Infrared heating during scratching has been performed to thermally soften and deform the transformed metallic material and some promising results were obtained. The sample material used here is silicon, but the same approach can be applied to germanium and other materials, such as ceramics (SiC), which have appropriate optical properties.

Ductile Regime Nanomachining of Single-Crystal Silicon Carbide

2004 ◽  
Vol 127 (3) ◽  
pp. 522-532 ◽  
Author(s):  
John Patten ◽  
Wei Gao ◽  
Kudo Yasuto
Keyword(s):  
Silicon Carbide ◽  
High Pressure ◽  
Single Crystal ◽  
Single Point ◽  
Single Crystal Silicon ◽  
Diamond Turning ◽  
High Pressure Phase ◽  
Ductile Material ◽  
Crystal Silicon ◽  
Pressure Phase

We have demonstrated the ability to perform a ductile material removal operation, via single-point diamond turning, on single-crystal silicon carbide (6H). To our knowledge, this is the first reported work on the ductile machining of single-crystal silicon carbide (SiC). SiC experiences a ductile-to-brittle transition similar to other nominally brittle materials such as silicon, germanium, and silicon nitride. It is believed that the ductility of SiC during machining is due to the formation of a high-pressure phase at the cutting edge, which encompasses the chip formation zone and its associated material volume. This high-pressure phase transformation mechanism is similar to that found with other semiconductors and ceramics, leading to a plastic response rather than brittle fracture at small size scales.

In Situ Observations of High-Pressure Phase Transformations in a Synthetic Methane Hydrate

2002 ◽  
Vol 106 (1) ◽  
pp. 30-33 ◽  
Author(s):  
Hiroyasu Shimizu ◽  
Tatsuya Kumazaki ◽  
Tetsuji Kume ◽  
Shigeo Sasaki
Keyword(s):  
High Pressure ◽  
Phase Transformations ◽  
Methane Hydrate ◽  
High Pressure Phase ◽  
In Situ Observations ◽  
Pressure Phase

High-Pressure Phase Transitions of Cubic Y 2 O 3 under High Pressures by In-situ Synchrotron X-Ray Diffraction

2019 ◽  
Vol 36 (4) ◽  
pp. 046103 ◽  
Author(s):  
Sheng Jiang ◽  
Jing Liu ◽  
Xiao-Dong Li ◽  
Yan-Chun Li ◽  
Shang-Ming He ◽  
...  
Keyword(s):  
High Pressure ◽  
Phase Transitions ◽  
High Pressures ◽  
High Pressure Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pressure Phase

In situ structure determination of the high-pressure phase of Fe3O4

1999 ◽  
Vol 84 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
Yingwei Fei ◽  
Daniel J. Frost ◽  
Ho-Kwang Mao ◽  
Charles T. Prewitt ◽  
Daniel Haeusermann
Keyword(s):  
High Pressure ◽  
Structure Determination ◽  
High Pressure Phase ◽  
Pressure Phase

A new high-pressure phase transition in clinoferrosilite: In situ single-crystal X-ray diffraction study

2017 ◽  
Vol 102 (3) ◽  
pp. 666-673 ◽  
Author(s):  
Anna Pakhomova ◽  
Leyla Ismailova ◽  
Elena Bykova ◽  
Maxim Bykov ◽  
Tiziana Boffa Ballaran ◽  
...  
Keyword(s):  
Phase Transition ◽  
High Pressure ◽  
Single Crystal ◽  
Diffraction Study ◽  
High Pressure Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Pressure Phase Transition ◽  
Pressure Phase

In-situ electrical probing of zones of nanoindentation-induced phases of silicon

2008 ◽  
Vol 1146 ◽  
Author(s):  
Simon Ruffell ◽  
Jodie Bradby ◽  
Jim Williams ◽  
Ryan Major ◽  
Oden Warren
Keyword(s):  
High Pressure ◽  
Amorphous Silicon ◽  
Measurement System ◽  
In Situ Measurement ◽  
High Pressure Phase ◽  
Crystalline Phases ◽  
Early Portion ◽  
Two Phases ◽  
Pressure Phase

AbstractPhase transformed zones of silicon have been formed by nanoindentation both at the micro- and nanoscale and electrically probed using an in-situ measurement system. Zones composed of the high pressure crystalline phases (Si-III/Si-XII) have higher conductivity than those of amorphous silicon (a-Si). At the microscale probing laterally across the surface shows that the conductivity varies within the zones composed of the high pressure phases. The sensitivity to the different conductivities of the two phases allows mapping within the zones. Finally, at the nanoscale the conductivity of the high pressure phase zones can be correlated with the position of the pop-out associated with the formation of the phases. The zones have higher conductivity when the pop-out occurs earlier on unloading and we suggest that this is due to the reduction in trace volumes of a-Si formed during the early portion of the unloading cycle.

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