Nano structure formation by gas cluster ion beam irradiations at oblique incidence

2004 ◽  
Vol 849 ◽  
Author(s):  
Noriaki Toyoda ◽  
Isao Yamada

ABSTRACTNano structure formations on Au surfaces by 20 keV Ar gas cluster ion beam (GCIB) irradiation at an oblique incidence were studied. When the incident angle was close to 0° from the surface normal of Au targets, the Au surface was smoothed due to the lateral sputtering effects and there were no structure formations on the surfaces. However, ripples were formed on Au surfaces at incident angle of 60° without sample rotation. When the Au samples were irradiated with Ar-GCIB at 60° with sample rotation, cone like structures with 50nm in diameters were fabricated and the surface roughness had a maximum value. However, the surface roughness suddenly decreased over incident angle of 60°. Even though the surface roughness was the same in the cases with and without sample rotations at 85° incidence, ripple structures were formed parallel to the incoming GCIB directions when there was no rotation. The incident angle dependence of the sputtering depth decreased following cosθ dependence. Very efficient surface smoothing without removing materials were realized with oblique incidence.

2021 ◽  
pp. 101428
Author(s):  
E.A. Skryleva ◽  
B.R. Senatulin ◽  
D.A. Kiselev ◽  
T.S. Ilina ◽  
D.A. Podgorny ◽  
...  

2018 ◽  
Vol 5 (23) ◽  
pp. 1800825
Author(s):  
Dong‐Jin Yun ◽  
Youngsik Shin ◽  
Chang Hoon Jung ◽  
Jae Cheol Lee ◽  
Sunjung Byun ◽  
...  

2011 ◽  
Vol 2011 (0) ◽  
pp. _J111022-1-_J111022-3
Author(s):  
Katsuya NAMBA ◽  
Hiroyuki SAKAKIBARA ◽  
Hedong ZHANG ◽  
Yasunaga MITSUYA ◽  
Kenji FUKUZAWA ◽  
...  

The Analyst ◽  
2019 ◽  
Vol 144 (10) ◽  
pp. 3323-3333 ◽  
Author(s):  
Shin-Kung Wang ◽  
Hsun-Yun Chang ◽  
Yi-Hsuan Chu ◽  
Wei-Lun Kao ◽  
Chen-Yi Wu ◽  
...  

With optimization, GCIB-O2+ cosputter is a promising technique for preserving molecular structures during ion sputtering and successfully profiled soft materials.


2015 ◽  
Vol 22 (2) ◽  
pp. 103-109
Author(s):  
Masashi Seki ◽  
Hiromi Tanaka ◽  
Noriyuki Kataoka ◽  
Satoru Kishida

2020 ◽  
Vol 514 ◽  
pp. 145903 ◽  
Author(s):  
O. Romanyuk ◽  
I. Gordeev ◽  
A. Paszuk ◽  
O. Supplie ◽  
J.P. Stoeckmann ◽  
...  

2004 ◽  
Vol 829 ◽  
Author(s):  
K. Krishnaswami ◽  
D. B. Fenner ◽  
S. R. Vangala ◽  
C. Santeufemio ◽  
M. Grzesik ◽  
...  

ABSTRACTHigh-quality GaSb substrates with minimal surface roughness and thin, uniform oxide layers are critical for developing low-power, epitaxy-based, electronic and optoelectronic devices. Ion-beam processing techniques of gas-cluster ion beam (GCIB) and bromine ion-beam assisted etching (Br-IBAE) were investigated as to their potential for improving the suitability of substrate surfaces for molecular beam epitaxial (MBE) growth. Statistical analysis of the residual surface roughness provides insight into ion-beam processing and its impact on epitaxial growth. Images of episurfaces grown on chemical mechanical polished (CMP), Br-IBAE, and GCIB finished substrates were obtained using atomic force microscopy (AFM) and these were statistically analyzed to characterize their surface roughness properties. Autocorrelation analysis of the first two types of episurfaces showed a quick loss of correlation within ∼100 nm. The episurface with Br-IBAE also showed isotropic mound roughness with sharp point-like protrusions. The GCIB prepared episurfaces exhibited the formation of uniform step-terrace patterns with monatomic steps and wide terraces as indicated by the strong, long range (>0.5 μm) correlations. Statistical analysis of the GCIB episurfaces showed self-similar random fractal behavior over eight orders of magnitude in the power spectral density (PSD) with a fractal dimension of ∼2.5.


2015 ◽  
Vol 22 (2) ◽  
pp. 97-103
Author(s):  
Chanae Park ◽  
Hongchol Chae ◽  
Nam Seok Park ◽  
Hee Jae Kang

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