GaP/Si(0 0 1) interface study by XPS in combination with Ar gas cluster ion beam sputtering

2020 ◽  
Vol 514 ◽  
pp. 145903 ◽  
Author(s):  
O. Romanyuk ◽  
I. Gordeev ◽  
A. Paszuk ◽  
O. Supplie ◽  
J.P. Stoeckmann ◽  
...  
RSC Advances ◽  
2015 ◽  
Vol 5 (95) ◽  
pp. 77814-77822 ◽  
Author(s):  
Dong-Jin Yun ◽  
Taeho Shin ◽  
SungJun Park ◽  
Youngsik Shin ◽  
YongKoo Kyung ◽  
...  

Thein situPES – Ar GCIB sputtering combined analysis enable to characterize the persistence of controlled energy-level at organic semiconductor/electrode interfaces.


2018 ◽  
Vol 20 (1) ◽  
pp. 615-622 ◽  
Author(s):  
Dong-Jin Yun ◽  
Seyun Kim ◽  
Changhoon Jung ◽  
Chang-Seok Lee ◽  
Hiesang Sohn ◽  
...  

We propose a novel, direct diagnosis method for graphene doping states at organic semiconductor/electrode interfaces by an in situ photoemission spectroscopy method.


2014 ◽  
Vol 46 (S1) ◽  
pp. 58-61 ◽  
Author(s):  
Yong Koo Kyoung ◽  
Jae Gwan Chung ◽  
Hyung Ik Lee ◽  
Dong-Jin Yun ◽  
Jae Cheol Lee ◽  
...  

2015 ◽  
Vol 3 (2) ◽  
pp. 276-282 ◽  
Author(s):  
Dong-Jin Yun ◽  
JaeGwan Chung ◽  
Seong Heon Kim ◽  
Yongsu Kim ◽  
Minsu Seol ◽  
...  

In situ molecular distribution analysis based on photoemission spectroscopy combined with Ar gas cluster ion beam sputtering process.


2018 ◽  
Vol 20 (4) ◽  
pp. 2914-2914
Author(s):  
Dong-Jin Yun ◽  
Seyun Kim ◽  
Changhoon Jung ◽  
Chang-Seok Lee ◽  
Hiesang Sohn ◽  
...  

Correction for ‘Direct characterization of graphene doping state by in situ photoemission spectroscopy with Ar gas cluster ion beam sputtering’ by Dong-Jin Yun et al., Phys. Chem. Chem. Phys., 2018, 20, 615–622.


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