Development of Rare Earth Niobate Buffer Layer for YBCO Coated Conductor Using Chemical Solution Deposition Approach

2005 ◽  
Vol 868 ◽  
Author(s):  
M.S. Bhuiyan ◽  
M. Paranthaman ◽  
S. Sathyamurthy

AbstractWe have grown epitaxial rare earth niobate (RE3NbO7; RE – La, Ce, Nd, Sm, Eu, Gd, Ho, Y, and Yb) buffer layers on biaxially textured Ni-W substrates using chemical solution deposition approach. Precursor solutions of 0.4 M total cation concentration were spin coated on short samples of Ni-3 at.%W (Ni-W) substrates and heat-treated at 1050 to 1100°C in a gas mixture of Ar-4%H2 for 15 minutes. Effect of solution chemistry and processing atmosphere on texture and microstructure were studied. Detailed X-Ray studies indicated that all the rare earth niobates were grown epitaxially. There was no significant change observed in texture for different precursor chemistry, however, dramatic effect on surface morphology observed. SEM and AFM investigations of RE3NbO7 films reveal noticeable difference in surface morphology and roughness for various processing atmospheres. Processing under a 20% wet Ar-4% H2 gas mixture was found to be the optimum condition for growing Gd3NbO7 films with high quality microstructure.

2006 ◽  
Vol 21 (3) ◽  
pp. 767-773 ◽  
Author(s):  
M.S. Bhuiyan ◽  
M. Paranthaman ◽  
A. Goyal ◽  
L. Heatherly ◽  
D.B. Beach

Epitaxial films of rare-earth (RE = La, Ce, Eu, and Gd) tantalates, RE3TaO7 with pyrochlore structures were grown on biaxially textured nickel-3 at.% tungsten (Ni-W) substrates using chemical solution deposition (CSD) process. Precursor solution of 0.3∼0.4 M concentration of total cations were spin coated on to short samples of Ni-W substrates and the films were crystallized at 1050∼1100 °C in a gas mixture of Ar- 4% H2 for 15 to 60 min. X-ray studies show that the films of pyrochlore RE tantalate films are highly textured with cube-on-cube epitaxy. Improved texture was observed in case of lanthanum tantalate (La3TaO7) film grown on Ni-W substrates. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) investigations of RE3TaO7 films reveal a fairly dense and smooth microstructure without cracks and porosity. The rare-earth tantalate layers may be potentially used as buffer layers for YBa2Cu3O7-δ (YBCO) coated conductors.


2005 ◽  
Vol 20 (1) ◽  
pp. 6-9 ◽  
Author(s):  
M. Paranthaman ◽  
M.S. Bhuiyan ◽  
S. Sathyamurthy ◽  
H.Y. Zhai ◽  
A. Goyal ◽  
...  

A new series of rare earth-niobate, RE3NbO7 (RE=Y,Gd,Eu), buffer layers were developed for the growth of superconducting YBa2Cu3O7−δ (YBCO) films on biaxially textured Ni–W (3 at.%) substrates. Using chemical solution deposition, smooth, crack-free, and epitaxial RE3NbO7 (RE = Y,Gd,Eu) films were grown on cube-textured Ni–W substrate. YBCO film with a critical current density of 1.1 × 106 A/cm2 in self-field at 77 K was grown directly on a single Gd3NbO7-buffered Ni–W substrate using pulsed laser deposition.


2007 ◽  
Vol 22 (9) ◽  
pp. 2398-2403 ◽  
Author(s):  
Guo Li ◽  
Minghua Pu ◽  
Huaming Zhou ◽  
Xiaohua Du ◽  
Yanbing Zhang ◽  
...  

New single-buffer layers of YBiO3 and SmBiO3 have been proposed for YBa2Cu3O7−y (YBCO) and SmBa2Cu3O7−y coated conductors. Highly c-axis oriented YBiO3 and SmBiO3 buffer layers have been deposited on single-crystal LaAlO3 and SrTiO3, respectively, by a low-cost chemical solution deposition method in a temperature range as low as 730 to 800 °C in air. Precursor solution of yttrium nitrate, samarium nitrate, and bismuth nitrate has been deposited using spin coating and heat treated in air in a single stage to yield textured YBiO3 and SmBiO3 buffers. A very dense, smooth, pinhole-free, and crack-free morphology has been observed for both buffers. Dense, homogeneous, and epitaxially grown YBCO film with thickness about 300 nm has been obtained on YBiO3 buffer with onset critical temperature 90 K and Jc (77 K, self-field) over 3 MA/cm2. These results offer an effective alternative to prepare desirable buffer layer(s) for YBCO-coated conductors.


2013 ◽  
Vol 566 ◽  
pp. 187-190
Author(s):  
Keiichi Sasajima ◽  
Hiroshi Uchida

Thin films of (La,Sr)MnO3 (LSMO) were fabricated by industrial-versatile chemical solution deposition (CSD) technique. Well [100]-oriented LSMO films were fabricated at 650-750 °C by use of buffer layers of LaNiO3 buffer layer on a silicon substrate. The product of lower electrical resistivity is promising as an electrode of fatigue-free ferroelectric capacitor.


2007 ◽  
Vol 17 (4) ◽  
pp. 3880-3885 ◽  
Author(s):  
Xuebin Zhu ◽  
Hechang Lei ◽  
Dongqi Shi ◽  
Li Zhang ◽  
Lin Wang ◽  
...  

2012 ◽  
Vol 36 ◽  
pp. 1552-1557 ◽  
Author(s):  
A. Angrisani Armenio ◽  
A. Augieri ◽  
F. Fabbri ◽  
R. Freda ◽  
V. Galluzzi ◽  
...  

2001 ◽  
Vol 16 (9) ◽  
pp. 2519-2525 ◽  
Author(s):  
K. Hwang ◽  
Y. Park

Bi4Ti3O12 thin films were grown epitaxially on SrTiO3(100) substrates by chemical solution deposition using metal naphthenates as starting materials. Homogeneous Bi–Ti solution with toluene was spin-coated onto the substrates and pyrolyzed at 500 °C for 10 min in air. Highly c-axis-oriented Bi4Ti3O12 thin films were crystallized by annealing pyrolyzed films at ≥650 °C. The x-ray pole-figure analysis indicated that the Bi4Ti3O12 thin films have an epitaxial relationship with the SrTiO3(100) substrates. The surface morphology of the films annealed at lower temperature, i.e., 650 °C, exhibited flat and smooth surfaces, while films annealed at higher temperatures, i.e., 750 and 800 °C, were characterized by three-dimensional outgrowth.


2004 ◽  
Vol 411 (3-4) ◽  
pp. 143-147 ◽  
Author(s):  
X.B. Zhu ◽  
S.M. Liu ◽  
H.R. Hao ◽  
L. Chen ◽  
W.H. Song ◽  
...  

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