Growth of InN By MBE
2000 ◽
Vol 5
(S1)
◽
pp. 181-187
Keyword(s):
A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.
Keyword(s):
2011 ◽
Vol 336
(1)
◽
pp. 40-43
◽
Keyword(s):
2007 ◽
Vol 301-302
◽
pp. 552-555
◽
Keyword(s):
2013 ◽
Vol 582
◽
pp. 157-160
◽
Keyword(s):
2013 ◽
Vol 62
(12)
◽
pp. 2109-2112
◽