Gas source chemical vapor deposition of hexagonal boron nitride on C-plane sapphire using B2H6 and NH3

Author(s):  
Anushka Bansal ◽  
Xiaotian Zhang ◽  
Joan M. Redwing
2D Materials ◽  
2017 ◽  
Vol 4 (2) ◽  
pp. 025117 ◽  
Author(s):  
Ariel Ismach ◽  
Harry Chou ◽  
Patrick Mende ◽  
Andrei Dolocan ◽  
Rafik Addou ◽  
...  

1991 ◽  
Vol 6 (11) ◽  
pp. 2393-2396 ◽  
Author(s):  
Vladimir Pavlović ◽  
Horst-Rainer Kötter ◽  
Christoph Meixner

Chemical vapor deposition (CVD) of boron nitride (BN) is most readily performed using BCl3 and NH3, which are brought into the deposition zone through two separate tubes. This causes some problems: inadequate mixing leading to a nonuniform deposit, formation of solid intermediates, etc. To avoid these problems, the process was performed by mixing BCl3 and NH3 at elevated temperatures (120–220 °C) prior to entering the deposition zone. The reaction between them took place by the forming of volatile stoichiometric B–N compounds (trichloroborazine and iminochloroborane), which were then transported through a single tube into a deposition zone. The resulting deposit was found to be hexagonal boron nitride.


Nano Letters ◽  
2010 ◽  
Vol 10 (10) ◽  
pp. 4134-4139 ◽  
Author(s):  
Yumeng Shi ◽  
Christoph Hamsen ◽  
Xiaoting Jia ◽  
Ki Kang Kim ◽  
Alfonso Reina ◽  
...  

2019 ◽  
Vol 2 (5) ◽  
pp. 2830-2835 ◽  
Author(s):  
Rui Han ◽  
Majharul H. Khan ◽  
Alexander Angeloski ◽  
Gilberto Casillas ◽  
Chang Won Yoon ◽  
...  

2015 ◽  
Vol 26 (27) ◽  
pp. 275601 ◽  
Author(s):  
Yao Wen ◽  
Xunzhong Shang ◽  
Ji Dong ◽  
Kai Xu ◽  
Jun He ◽  
...  

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