scholarly journals TUNABLE CLOAKING OF MEXICAN-HAT CONFINED STATES IN BILAYER SILICENE

2019 ◽  
Vol 29 (3) ◽  
Author(s):  
Lan Tran ◽  
Le Bin Ho
Keyword(s):  
Electric Field ◽  
Quantum Transport ◽  
Incident Energy ◽  
Bilayer Graphene ◽  
Low Energy ◽  
Band Model ◽  
Spin Orbit Coupling ◽  
Mexican Hat ◽  
Transfer Matrix Approach ◽  
Potential Height

We present the ballistic quantum transport of a p-n-p bilayer silicene junction in the presence of spin-orbit coupling and electric field using a four-band model in combination with the transfer-matrix approach. A Mexican-hat shape of low-energy spectrum is observed similarly to bilayer graphene under an interalayer bias. We show that while bilayer silicene shares some physics with bilayer graphene, it has many intriguing phenomena that have not been reported for the latter. First, the confined state producing a significantly non-zero transmission in Mexican hat. Second, the cloaking of the Mexican-hat confined state is found. Third, we observe that the Mexican-hat cloaking results in a strong oscillation of conductance when the incident energy is below the potential height. Finally, unlike monolayer silicene, the conductance at large interlayer distances increases with the rise of electric field when the incident energy is above the potential height. 

scholarly journals Extremely flat band in bilayer graphene

2018 ◽  
Vol 4 (11) ◽  
pp. eaau0059 ◽  
Author(s):  
D. Marchenko ◽  
D. V. Evtushinsky ◽  
E. Golias ◽  
A. Varykhalov ◽  
Th. Seyller ◽  
...  
Keyword(s):  
Elevated Temperatures ◽  
Bilayer Graphene ◽  
Flat Band ◽  
Honeycomb Lattice ◽  
Band Model ◽  
Two Dimensional ◽  
Band Formation ◽  
Constant Energy ◽  
Mexican Hat ◽  
Band Dispersion

We propose a novel mechanism of flat band formation based on the relative biasing of only one sublattice against other sublattices in a honeycomb lattice bilayer. The mechanism allows modification of the band dispersion from parabolic to “Mexican hat”–like through the formation of a flattened band. The mechanism is well applicable for bilayer graphene—both doped and undoped. By angle-resolved photoemission from bilayer graphene on SiC, we demonstrate the possibility of realizing this extremely flattened band (< 2-meV dispersion), which extends two-dimensionally in a k-space area around the K¯ point and results in a disk-like constant energy cut. We argue that our two-dimensional flat band model and the experimental results have the potential to contribute to achieving superconductivity of graphene- or graphite-based systems at elevated temperatures.

scholarly journals Low-Energy Optical Conductivity of TaP: Comparison of Theory and Experiment

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 567
Author(s):  
Alexander Yaresko ◽  
Artem V. Pronin
Keyword(s):  
Experimental Data ◽  
Optical Conductivity ◽  
Low Energy ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Natural Explanation ◽  
Weyl Semimetal ◽  
Unintentional Doping ◽  
Mott Formula ◽  
Theory And Experiment

The ab-plane optical conductivity of the Weyl semimetal TaP is calculated from the band structure and compared to the experimental data. The overall agreement between theory and experiment is found to be best when the Fermi level is slightly (20 to 60 meV) shifted upwards in the calculations. This confirms a small unintentional doping of TaP, reported earlier, and allows a natural explanation of the strong low-energy (50 meV) peak seen in the experimental ab-plane optical conductivity: this peak originates from transitions between the almost parallel non-degenerate electronic bands split by spin-orbit coupling. The temperature evolution of the peak can be reasonably well reproduce by calculations using an analog of the Mott formula.

scholarly journals Layer- and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductor

2021 ◽  
Vol 7 (5) ◽  
pp. eabe2892
Author(s):  
Dmitry Shcherbakov ◽  
Petr Stepanov ◽  
Shahriar Memaran ◽  
Yaxian Wang ◽  
Yan Xin ◽  
...  
Keyword(s):  
Electric Field ◽  
High Mobility ◽  
Orbit Coupling ◽  
Spin Splitting ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Quantum Oscillations ◽  
Out Of Plane ◽  
Order Of Magnitude ◽  
Spin Degeneracy

Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to many magnetic, spintronic, and topological phenomena and applications. In bulk materials, SOC strength is a constant. Here, we demonstrate SOC and intrinsic spin splitting in atomically thin InSe, which can be modified over a broad range. From quantum oscillations, we establish that the SOC parameter α is thickness dependent; it can be continuously modulated by an out-of-plane electric field, achieving intrinsic spin splitting tunable between 0 and 20 meV. Unexpectedly, α could be enhanced by an order of magnitude in some devices, suggesting that SOC can be further manipulated. Our work highlights the extraordinary tunability of SOC in 2D materials, which can be harnessed for in operando spintronic and topological devices and applications.

Plasmon modes in N-layer silicene structures

2021 ◽  
Author(s):  
Men Nguyen Van
Keyword(s):  
Electric Field ◽  
Random Phase ◽  
Single Layer ◽  
Plasmon Mode ◽  
Orbit Coupling ◽  
Collective Excitations ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Number Of Layers ◽  
Plasmon Modes

Abstract We investigate the plasmon properties in N-layer silicene systems consisting of N, up to 6, parallel single-layer silicene under the application of an out-of-plane electric field, taking into account the spin-orbit coupling within the random-phase approximation. Numerical calculations demonstrate that N undamped plasmon modes, including one in-phase optical and (N-1) out-of-phase acoustic modes, continue mainly outside the single-particle excitation area of the system. As the number of layers increases, the frequencies of plasmonic collective excitations increase and can become much larger than that in single layer silicene, more significant for high-frequency modes. The optical (acoustic) plasmon mode(s) noticeably (slightly) decreases with the increase in the bandgap and weakly depends on the number of layers. We observe that the phase transition of the system weakly affects the plasmon properties, and as the bandgap caused by the spin-orbit coupling equal that caused by the external electric field, the plasmonic collective excitations and their broadening function in multilayer silicene behave similarly to those in multilayer gapless graphene structures. Our investigations show that plasmon curves in the system move toward that in single layer silicene as the separation increases, and the impacts of this factor can be raised by a large number of layers in the system. Finally, we find that the imbalanced carrier density between silicene layers significantly decreases plasmon frequencies, depending on the number of layers.

Sign in / Sign up

Export Citation Format

Share Document