scholarly journals SILICON NANOWIRES FABRICATION BY PHYSICAL METHOD

2018 ◽  
Vol 54 (5A) ◽  
pp. 169
Author(s):  
Nguyen Thi Thuy
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Field Emission ◽  
Silicon Nanowires ◽  
Thermal Evaporation ◽  
Physical Method ◽  
Electron Beam Evaporation ◽  
Metal Catalysts ◽  
Scanning Electron

Silicon nanowires (Si NWs) were fabricated on Si(111) surfaces by both thermal evaporation and sputtering methods. Au nanocrystals were used as the metal catalysts and they were fabricated by electron beam evaporation. The field emission scanning electron microscopy (FESEM) was used to characterize the Si NWs. The diameters of the Si NWs were measured to be about few tens of nanometer. The mechanism of the nanowires formation by these methods was also discussed.

A New Image Processing Technique for STEM

1974 ◽  
Vol 32 ◽  
pp. 432-433
Author(s):  
Yasushi Kokubo ◽  
Hirotami Koike ◽  
Teruo Someya
Keyword(s):  
Electron Microscopy ◽  
Image Processing ◽  
Scanning Electron Microscopy ◽  
Elastic Scattering ◽  
Field Emission ◽  
Processing Technique ◽  
Image Processing Technique ◽  
Energy Analyzer ◽  
Scanning Microscope ◽  
Scanning Electron

One of the advantages of scanning electron microscopy is the capability for processing the image contrast, i.e., the image processing technique. Crewe et al were the first to apply this technique to a field emission scanning microscope and show images of individual atoms. They obtained a contrast which depended exclusively on the atomic numbers of specimen elements (Zcontrast), by displaying the images treated with the intensity ratio of elastically scattered to inelastically scattered electrons. The elastic scattering electrons were extracted by a solid detector and inelastic scattering electrons by an energy analyzer. We noted, however, that there is a possibility of the same contrast being obtained only by using an annular-type solid detector consisting of multiple concentric detector elements.

High Resolution Scanning Electron Microscopy

1991 ◽  
Vol 49 ◽  
pp. 478-479
Author(s):  
David Joy ◽  
James Pawley
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Electron Probe ◽  
Impact Point ◽  
Interaction Volume ◽  
Scanning Electron

The scanning electron microscope (SEM) builds up an image by sampling contiguous sub-volumes near the surface of the specimen. A fine electron beam selectively excites each sub-volume and then the intensity of some resulting signal is measured. The spatial resolution of images made using such a process is limited by at least three factors. Two of these determine the size of the interaction volume: the size of the electron probe and the extent to which detectable signal is excited from locations remote from the beam impact point. A third limitation emerges from the fact that the probing beam is composed of a finite number of discrete particles and therefore that the accuracy with which any detectable signal can be measured is limited by Poisson statistics applied to this number (or to the number of events actually detected if this is smaller).

Investigation of Die Tilting of Packages with Single and Multi-chips

2018 ◽  
Author(s):  
Lo Chea Wee ◽  
Tan Sze Yee ◽  
Gan Sue Yin ◽  
Goh Cin Sheng
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Optical Microscopy ◽  
Device Performance ◽  
Electronic Components ◽  
Area Of Interest ◽  
On Chip ◽  
Scanning Electron

Abstract Advanced package technology often includes multi-chips in one package to accommodate the technology demand on size & functionality. Die tilting leads to poor device performance for all kinds of multi-chip packages such as chip by chip (CbC), chip on chip (CoC), and the package with both CbC and CoC. Traditional die tilting measured by optical microscopy and scanning electron microscopy has capability issue due to wave or electron beam blocking at area of interest by electronic components nearby. In this paper, the feasibility of using profilemeter to investigate die tilting in single and multi-chips is demonstrated. Our results validate that the profilemeter is the most profound metrology for die tilting analysis especially on multi-chip packages, and can achieve an accuracy of <2μm comparable to SEM.

scholarly journals A Review on Enhancing the Antibacterial Activity of ZnO: Mechanisms and Microscopic Investigation

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Buzuayehu Abebe ◽  
Enyew Amare Zereffa ◽  
Aschalew Tadesse ◽  
H. C. Ananda Murthy
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Antibacterial Activity ◽  
Field Emission ◽  
Volume Ratio ◽  
Electronic Configuration ◽  
Microscopic Investigation ◽  
Electron Microscopic ◽  
Active Materials ◽  
Scanning Electron

Abstract Metal oxide nanomaterials are one of the preferences as antibacterial active materials. Due to its distinctive electronic configuration and suitable properties, ZnO is one of the novel antibacterial active materials. Nowadays, researchers are making a serious effort to improve the antibacterial activities of ZnO by forming a composite with the same/different bandgap semiconductor materials and doping of ions. Applying capping agents such as polymers and plant extract that control the morphology and size of the nanomaterials and optimizing different conditions also enhance the antibacterial activity. Forming a nanocomposite and doping reduces the electron/hole recombination, increases the surface area to volume ratio, and also improves the stability towards dissolution and corrosion. The release of antimicrobial ions, electrostatic interaction, reactive oxygen species (ROS) generations are the crucial antibacterial activity mechanism. This review also presents a detailed discussion of the antibacterial activity improvement of ZnO by forming a composite, doping, and optimizing different conditions. The morphological analysis using scanning electron microscopy, field emission-scanning electron microscopy, field-emission transmission electron microscopy, fluorescence microscopy, and confocal microscopy can confirm the antibacterial activity and also supports for developing a satisfactory mechanism. Graphical abstract Graphical abstract showing the metal oxides antibacterial mechanism and the fluorescence and scanning electron microscopic images.

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