A novel high-voltage trench gate insulated gate bipolar transistor with diffusion remnant layer
2005 ◽
pp. 917-920
2012 ◽
Vol 9
(4)
◽
Keyword(s):
2019 ◽
Vol 146
◽
pp. 106106
◽
2005 ◽
Vol 483-485
◽
pp. 917-920
◽
Keyword(s):
2021 ◽
Vol 2030
(1)
◽
pp. 012026
2012 ◽
Vol 9
(4)
◽
pp. 417-427