scholarly journals The Impact of Different Operation Conditions on the Plasma Extraction Transit Time Oscillation in High-Voltage Insulated Gate Bipolar Transistor Devices

2021 ◽  
Vol 2030 (1) ◽  
pp. 012026
Author(s):  
Xinling Tang ◽  
Xizi Zhang ◽  
Zhongkang Lin ◽  
Hao Shi ◽  
Anqi Dai
Keyword(s):  
Transit Time ◽  
High Voltage ◽  
Bipolar Transistor ◽  
Insulated Gate Bipolar Transistor ◽  
Operation Conditions ◽  
The Impact ◽  
Plasma Extraction

High voltage trench insulated gate bipolar transistor with MOS structure for self-adjustable hole extraction

2020 ◽  
Vol 35 (11) ◽  
pp. 11LT01
Author(s):  
Yishang Zhao ◽  
Zehong Li ◽  
Xin Peng ◽  
Yang Yang ◽  
Xiao Zeng ◽  
...  
Keyword(s):  
High Voltage ◽  
Bipolar Transistor ◽  
Mos Structure ◽  
Insulated Gate Bipolar Transistor

A high voltage silicon-on-insulator lateral insulated gate bipolar transistor with a reduced cell-pitch

2013 ◽  
Vol 22 (2) ◽  
pp. 027303 ◽  
Author(s):  
Xiao-Rong Luo ◽  
Qi Wang ◽  
Guo-Liang Yao ◽  
Yuan-Gang Wang ◽  
Tian-Fei Lei ◽  
...  
Keyword(s):  
High Voltage ◽  
Bipolar Transistor ◽  
Silicon On Insulator ◽  
Insulated Gate Bipolar Transistor

Comparison of High-Voltage 4H-SiC Insulated-Gate Bipolar Transistor (IGBT) and MOS-Gated Bipolar Transistor (MGT)

2005 ◽  
Vol 483-485 ◽  
pp. 917-920 ◽  
Author(s):  
Lin Zhu ◽  
S. Balachandran ◽  
T. Paul Chow
Keyword(s):  
Numerical Simulations ◽  
High Voltage ◽  
Bipolar Transistor ◽  
Drift Region ◽  
Insulated Gate Bipolar Transistor

In this paper, the performance of high-voltage (10kV) 4H-SiC n- and p-channel IGBTs and n-channel MOS-Gated Bipolar Transistor (MGT) are investigated and compared using 2- dimensional numerical simulations. We have found that the MGT in SiC is not suitable for applications at high blocking voltages and the p-channel IGBT is a better choice because of a much higher conductivity modulation in the drift region.

scholarly journals INVESTIGATION OF IMPACT OF THE GATE CIRCUITRY ON IGBT TRANSISTOR DYNAMIC PARAMETERS

2010 ◽  
Vol 2 (1) ◽  
pp. 59-62
Author(s):  
Vytautas Bleizgys ◽  
Andrius Platakis
Keyword(s):  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Dynamic Parameters ◽  
Insulated Gate Bipolar Transistors ◽  
Collector Current ◽  
Fall Time ◽  
Insulated Gate Bipolar Transistor ◽  
Driver Circuit ◽  
The Impact

The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated. The influence of transistor driver circuit parameters on heating of Insulated Gate Bipolar Transistors was investigated as well.

scholarly journals A novel high-voltage trench gate insulated gate bipolar transistor with diffusion remnant layer

2013 ◽  
Vol 10 (21) ◽  
pp. 20130719-20130719
Author(s):  
Bin Zhang ◽  
Yan Han ◽  
Shifeng Zhang ◽  
Dazhong Zhu ◽  
Wei Zhang ◽  
...  
Keyword(s):  
High Voltage ◽  
Bipolar Transistor ◽  
Insulated Gate Bipolar Transistor
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