Comparison of High-Voltage 4H-SiC Insulated-Gate Bipolar Transistor (IGBT) and MOS-Gated Bipolar Transistor (MGT)
2005 ◽
pp. 917-920
2012 ◽
Vol 9
(4)
◽
Keyword(s):
2019 ◽
Vol 146
◽
pp. 106106
◽
2005 ◽
Vol 483-485
◽
pp. 917-920
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Keyword(s):
2021 ◽
Vol 2030
(1)
◽
pp. 012026
2012 ◽
Vol 9
(4)
◽
pp. 417-427