Comparison of High-Voltage 4H-SiC Insulated-Gate Bipolar Transistor (IGBT) and MOS-Gated Bipolar Transistor (MGT)
2005 ◽
Vol 483-485
◽
pp. 917-920
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Keyword(s):
In this paper, the performance of high-voltage (10kV) 4H-SiC n- and p-channel IGBTs and n-channel MOS-Gated Bipolar Transistor (MGT) are investigated and compared using 2- dimensional numerical simulations. We have found that the MGT in SiC is not suitable for applications at high blocking voltages and the p-channel IGBT is a better choice because of a much higher conductivity modulation in the drift region.
Keyword(s):
2012 ◽
Vol 717-720
◽
pp. 1139-1142
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2005 ◽
pp. 917-920
2012 ◽
Vol 9
(4)
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Keyword(s):
2019 ◽
Vol 146
◽
pp. 106106
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2021 ◽
Vol 2030
(1)
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pp. 012026