Measurements of the Breakdown Voltage of the Lateral Insulated Gate Bipolar Transistor on the Silicon-on-Insulator Film with Varying Implantation Doses for the N-Buffer Layer

1995 ◽  
Vol 34 (Part 1, No. 1) ◽  
pp. 85-86
Author(s):  
Hitoshi Sumida ◽  
Atsuo Hirabayashi
Keyword(s):  
Buffer Layer ◽  
Breakdown Voltage ◽  
Bipolar Transistor ◽  
Silicon On Insulator ◽  
Insulated Gate Bipolar Transistor ◽  
Insulator Film

A Study on the Electric Characteristics of the Trench Gate Field Stop Insulated Gate Bipolar Transistor Through Two-Step Field Stop

2021 ◽  
Vol 16 (5) ◽  
pp. 762-765
Author(s):  
Hae Seock Lee ◽  
Geon Hee Lee ◽  
Byoung Sup Ahn ◽  
Ey Goo Kang
Keyword(s):  
Breakdown Voltage ◽  
Semiconductor Device ◽  
Voltage Drop ◽  
Bipolar Transistor ◽  
Power Semiconductor ◽  
Insulated Gate Bipolar Transistor ◽  
Voltage Loss ◽  
One Step ◽  
Junction Transistor ◽  
Off Time

Insulated gate bipolar transistor (IGBT) element is an electrically conductive device with Bipolar junction transistor (BJT) output and Metal Oxide Silicon Field Effect Transistor (MOSFET) input. The IGBTs is a power semiconductor device that aims for high breakdown voltage, low on-state voltage, fast switching and reliability. This paper is, the experiment was conducted with a two-step field stop, IGBT instead of a traditional one step field stop. In order to minimize the energy loss caused by the trade-off relationship between breakdown voltage and the on-state voltage drop, the experiment was conducted by forming a two-step field stop. Through concentration control between steps, breakdown voltage, On-state Voltage drop and turn off time could be adjusted in detail, and efficient characteristic values could be obtained accordingly. Experiments have confirmed that the On state voltage drop and turn-off time, in particular, can be adjusted by small failure voltage loss upon change in the first stage field stop.

An Improvement of the Breakdown Voltage Characteristics of NPT-TIGBT by Using a P-Buried Layer

2013 ◽  
Vol 717 ◽  
pp. 158-163
Author(s):  
Phasapon Manosukritkul ◽  
Amonrat Kerdpardist ◽  
Montree Saenlamool ◽  
Ekalak Chaowicharat ◽  
Amporn Poyai ◽  
...  
Keyword(s):  
Electric Field ◽  
Carrier Concentration ◽  
Breakdown Voltage ◽  
Bipolar Transistor ◽  
Insulated Gate Bipolar Transistor ◽  
Buried Layer ◽  
Simulation Results ◽  
Drift Layer

In this paper, we introduced a P-buried (Pb) layer under trench gate which relieved the electric field crowding in the Non Punch Through Trench gate Insulated Gate Bipolar Transistor (NPT-TIGBT) structure. The Pblayer, with carrier concentration of 5x1016cm-3, was created underneath the trench gate within the n-drift layer. In this way, the concentration of electric field at the trench bottom corner decreased. As a result, the breakdown voltage characteristics of NPT-TIGBT improved. The structures were proposed and verified by T-CAD Sentuarus simulation. From the simulation results, the breakdown voltage increased by approximately 30% compared with conventional NPT-TIGBT.

A high voltage silicon-on-insulator lateral insulated gate bipolar transistor with a reduced cell-pitch

2013 ◽  
Vol 22 (2) ◽  
pp. 027303 ◽  
Author(s):  
Xiao-Rong Luo ◽  
Qi Wang ◽  
Guo-Liang Yao ◽  
Yuan-Gang Wang ◽  
Tian-Fei Lei ◽  
...  
Keyword(s):  
High Voltage ◽  
Bipolar Transistor ◽  
Silicon On Insulator ◽  
Insulated Gate Bipolar Transistor
Sign in / Sign up

Export Citation Format

Share Document