scholarly journals Observation of high dielectric constant of Bi-Nb-Ox thin-film capacitors fabricated by chemical solution deposition process

2014 ◽  
Vol 11 (16) ◽  
pp. 20140651-20140651 ◽  
Author(s):  
Masatoshi Onoue ◽  
Takaaki Miyasako ◽  
Eisuke Tokumitsu ◽  
Tatsuya Shimoda
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Chemical Solution Deposition ◽  
High Dielectric Constant ◽  
Deposition Process ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Thin Film Capacitors ◽  
High Dielectric

Thin film capacitors fabricated by chemical solution deposition

2008 ◽  
Author(s):  
Song Won Ko ◽  
Tanawadee Dechakupt ◽  
Gaiying Yang ◽  
Clive A. Randall ◽  
Susan Trolier-McKinstry ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Thin Film Capacitors

Structure and Electrical Properties of Highly (100)-Oriented Ba(Zr0.05Ti0.95)O3 Films Prepared by Chemical Solution Deposition

2006 ◽  
Vol 11-12 ◽  
pp. 101-104 ◽  
Author(s):  
Yi Ping Guo ◽  
Kazuyuki Suzuki ◽  
Kaori Nishizawa ◽  
Takeshi Miki ◽  
Kazumi Kato
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Chemical Solution Deposition ◽  
Remanent Polarization ◽  
Deposition Process ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Orientation Degree ◽  
Oriented Films

A chemical solution deposition process for preparation of highly (100)-oriented Ba(Zr0.05Ti0.95)O3 films was developed. The orientation degree of Ba(Zr0.05Ti0.95)O3 thin films prepared by this process can reach up to 99.1%. The electrical properties of the (100)-oriented films prepared by this process have been studied. The Ba(Zr0.05Ti0.95)O3 films with a thickness of about 270 nm show a dielectric constant of ∼740 and a loss tangent of ∼3%. The remanent polarization (2Pr) and coercive field (2Ec) are 3.2 μC/cm2 and 34 kV/cm, respectively.

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