Impact of time dependent dielectric breakdown and stress-induced leakage current on the reliability of high dielectric constant (Ba,Sr)TiO/sub 3/ thin-film capacitors for Gbit-scale DRAMs

Dielectric Breakdown ◽

Time Dependent ◽

Thin Film Capacitors ◽

Stress Induced Leakage Current ◽

Impact of time dependent dielectric breakdown and stress induced leakage current on the reliability of (Ba,Sr)TiO/sub 3/ thin film capacitors for Gbit-scale DRAMs

International Electron Devices Meeting. IEDM Technical Digest ◽

10.1109/iedm.1997.650377 ◽

2002 ◽

Cited By ~ 2

Author(s):

S. Yamamichi ◽

A. Yamaichi ◽

D. Park ◽

C. Hu

Keyword(s):

Thin Film ◽

Leakage Current ◽

Dielectric Breakdown ◽

Time Dependent ◽

Thin Film Capacitors ◽

Stress Induced Leakage Current

Investigation of the importance of interface and bulk limited transport mechanisms on the leakage current of high dielectric constant thin film capacitors

Journal of Applied Physics ◽

10.1063/1.1620377 ◽

2003 ◽

Vol 94 (10) ◽

pp. 6741-6748 ◽

Cited By ~ 49

Author(s):

J. D. Baniecki ◽

T. Shioga ◽

K. Kurihara ◽

N. Kamehara

Keyword(s):

Thin Film ◽

Dielectric Constant ◽

Leakage Current ◽

Transport Mechanisms ◽

Thin Film Capacitors ◽

A new GaAs MMIC process technology using 0.5 mu m gate asymmetric LDD structure GaAs BP-MESFETs combined with high-dielectric-constant thin-film capacitors

Semiconductor Science and Technology ◽

10.1088/0268-1242/10/11/017 ◽

1995 ◽

Vol 10 (11) ◽

pp. 1534-1540 ◽

Cited By ~ 7

Author(s):

M Nishitsuji ◽

T Uda ◽

T Yokoyama ◽

K Fujimoto ◽

K Nishii ◽

...

Keyword(s):

Thin Film ◽

Dielectric Constant ◽

Process Technology ◽

Thin Film Capacitors ◽

Impact of post processing damage on the performance of high dielectric constant PLZT thin film capacitors for ULSI DRAM applications

Proceedings of 1994 IEEE International Electron Devices Meeting ◽

10.1109/iedm.1994.383399 ◽

2002 ◽

Cited By ~ 4

Author(s):

R. Khamankar ◽

Jiyoung Kim ◽

Bo Jiang ◽

C. Sudhama ◽

P. Maniar ◽

...

Keyword(s):

Thin Film ◽

Dielectric Constant ◽

Post Processing ◽

Thin Film Capacitors ◽

Plzt Thin Film ◽

Erratum: “An investigation on the leakage current and time dependent dielectric breakdown of ferroelectric lead–zirconate–titanate thin film capacitors for memory device applications” [Appl. Phys. Lett. 69, 4011 (1996)]

Applied Physics Letters ◽

10.1063/1.119268 ◽

1997 ◽

Vol 70 (8) ◽

pp. 1058-1058

Author(s):

Jia-lin Chen ◽

Hong-ming Chen ◽

Joseph Ya-min Lee

Keyword(s):

Thin Film ◽

Lead Zirconate Titanate ◽

Dielectric Breakdown ◽

Memory Device ◽

Lead Zirconate ◽

Time Dependent ◽

Thin Film Capacitors ◽

Device Applications ◽

Titanate Thin Film

Time dependent dielectric breakdown and stress induced leakage current characteristics of 8Å EOT HfO2 N-MOSFETS

2010 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2010.5488730 ◽

2010 ◽

Author(s):

Robert O'Connor ◽

Greg Hughes ◽

Thomas Kauerauf ◽

Lars-Ake Ragnarsson

Keyword(s):

Leakage Current ◽

Dielectric Breakdown ◽

Time Dependent ◽

Stress Induced Leakage Current ◽

Current Characteristics

Relation between stress-induced leakage current and time-dependent dielectric breakdown in ultra-thin gate oxides

Semiconductor Science and Technology ◽

10.1088/0268-1242/14/10/302 ◽

1999 ◽

Vol 14 (10) ◽

pp. 892-896 ◽

Cited By ~ 26

Author(s):

M Houssa ◽

P W Mertens ◽

M M Heyns

Keyword(s):

Leakage Current ◽

Dielectric Breakdown ◽

Time Dependent ◽

Gate Oxides ◽

Stress Induced Leakage Current

Observation of high dielectric constant of Bi-Nb-Ox thin-film capacitors fabricated by chemical solution deposition process

IEICE Electronics Express ◽

10.1587/elex.11.20140651 ◽

2014 ◽

Vol 11 (16) ◽

pp. 20140651-20140651 ◽

Cited By ~ 4

Author(s):

Masatoshi Onoue ◽

Takaaki Miyasako ◽

Eisuke Tokumitsu ◽

Tatsuya Shimoda

Keyword(s):

Thin Film ◽

Dielectric Constant ◽

Chemical Solution Deposition ◽

Deposition Process ◽

Chemical Solution ◽

Solution Deposition ◽

Thin Film Capacitors ◽

An investigation on the leakage current and time dependent dielectric breakdown of ferroelectric lead–zirconate–titanate thin film capacitors for memory device applications

Applied Physics Letters ◽

10.1063/1.117854 ◽

1996 ◽

Vol 69 (26) ◽

pp. 4011-4013 ◽

Cited By ~ 28

Author(s):

Jia‐lin Chen ◽

Hong‐ming Chen ◽

Joseph Ya‐min Lee

Keyword(s):

Thin Film ◽

Lead Zirconate Titanate ◽

Dielectric Breakdown ◽

Memory Device ◽

Lead Zirconate ◽

Time Dependent ◽

Thin Film Capacitors ◽

Device Applications ◽

Titanate Thin Film

Advanced GaAs-MMIC process technology using high-dielectric constant thin film capacitors by low-temperature RF sputtering method

15th Annual GaAs IC Symposium ◽

10.1109/gaas.1993.394441 ◽

2002 ◽

Cited By ~ 15

Author(s):

M. Nishitsuji ◽

A. Tamura ◽

T. Kunihisa ◽

K. Yaharta ◽

M. Shibuya ◽

...

Keyword(s):

Thin Film ◽

Dielectric Constant ◽

Low Temperature ◽

Rf Sputtering ◽

Process Technology ◽

Thin Film Capacitors ◽