Improved Switching Characteristics Obtained by Using High-k Dielectric Layers in 4H-SiC IGBT: Physics-Based Simulation

2017 ◽  
Vol 897 ◽  
pp. 571-574 ◽  
Author(s):  
Vidya Naidu ◽  
Sivaprasad Kotamraju
Keyword(s):  
Switching Frequency ◽  
Power Losses ◽  
Switching Power ◽  
Mos Devices ◽  
High K ◽  
High Switching Frequency ◽  
Switching Characteristics ◽  
High K Dielectric ◽  
Current Duration ◽  
Physics Based Simulation

Silicon Carbide (SiC) based MOS devices are one of the promising devices for high temperature, high switching frequency and high power applications. In this paper, the static and dynamic characteristics of an asymmetric trench gate SiC IGBT with high-k dielectrics- HfO2 and ZrO2 are investigated. SiC IGBT with HfO2 and ZrO2 exhibited higher forward transconductance ratio and lower threshold voltage compared to conventionally used SiO2. In addition, lower switching power losses have been observed in the case of high-k dielectrics due to reduced tail current duration.

High-k dielectric oxides obtained by PLD as solution for gates dielectric in MOS devices

2007 ◽  
Vol 253 (19) ◽  
pp. 8184-8191 ◽  
Author(s):  
M. Filipescu ◽  
N. Scarisoreanu ◽  
V. Craciun ◽  
B. Mitu ◽  
A. Purice ◽  
...  
Keyword(s):  
Mos Devices ◽  
High K ◽  
High K Dielectric

A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices

2016 ◽  
Vol 95 ◽  
pp. 24-32 ◽  
Author(s):  
Niladri Pratap Maity ◽  
Reshmi Maity ◽  
R.K. Thapa ◽  
Srimanta Baishya
Keyword(s):  
Current Density ◽  
Dielectric Material ◽  
Tunneling Current ◽  
Density Model ◽  
Mos Devices ◽  
High K ◽  
High K Dielectric

Capacitance-voltage characteristics measured through pulse technique on high- k dielectric MOS devices

Vacuum ◽  
2017 ◽  
Vol 140 ◽  
pp. 19-23
Author(s):  
Qifeng Lu ◽  
Yanfei Qi ◽  
Ce Zhou Zhao ◽  
Chun Zhao ◽  
Stephen Taylor ◽  
...  
Keyword(s):  
Pulse Technique ◽  
Mos Devices ◽  
High K ◽  
Capacitance Voltage ◽  
High K Dielectric

scholarly journals A Review of Modular Multilevel Converters for Stationary Applications

2020 ◽  
Vol 10 (21) ◽  
pp. 7719
Author(s):  
Yang Wang ◽  
Ahmet Aksoz ◽  
Thomas Geury ◽  
Salih Baris Ozturk ◽  
Omer Cihan Kivanc ◽  
...  
Keyword(s):  
Pulse Width ◽  
Pulse Width Modulation ◽  
Low Voltage ◽  
Current Control ◽  
Switching Frequency ◽  
Power Losses ◽  
Circulating Current ◽  
High Switching Frequency ◽  
Wide Range ◽  
Balancing Control

A modular multilevel converter (MMC) is an advanced voltage source converter applicable to a wide range of medium and high-voltage applications. It has competitive advantages such as quality output performance, high modularity, simple scalability, and low voltage and current rating demand for the power switches. Remarkable studies have been carried out regarding its topology, control, and operation. The main purpose of this review is to present the current state of the art of the MMC technology and to offer a better understanding of its operation and control for stationary applications. In this study, the MMC configuration is presented regarding its conventional and advanced submodule (SM) and overall topologies. The mathematical modeling, output voltage, and current control under different grid conditions, submodule balancing control, circulating current control, and modulation methods are discussed to provide the state of the MMC technology. The challenges linked to the MMC are associated with submodule balancing control, circulating current control, control complexity, and transient performance. Advanced nonlinear and predictable control strategies are expected to improve the MMC control and performance in comparison with conventional control methods. Finally, the power losses associated with the advanced wide bandgap (WBG) power devices (such as SiC, GaN) are explored by using different modulation schemes and switching frequencies. The results indicate that although the phase-shifted carrier-based pulse width modulation (PSC-PWM) has higher power losses, it outputs a better quality voltage with lower total harmonic distortion (THD) in comparison with phase-disposition pulse width modulation (PD-PWM) and sampled average modulation pulse width modulation (SAM-PWM). In addition, WBG switches such as silicon carbide (SiC) and gallium nitride (GaN) devices have lower power losses and higher efficiency, especially at high switching frequency in the MMC applications.

scholarly journals Analysis of Flatband Voltage for MOS Devices Using High-K Dielectric Materials

2014 ◽  
Vol 5 ◽  
pp. 1198-1204 ◽  
Author(s):  
N.P. Maity ◽  
Atul Kumar ◽  
Reshmi Maity ◽  
S. Baishya
Keyword(s):  
Dielectric Materials ◽  
Mos Devices ◽  
High K ◽  
Flatband Voltage ◽  
High K Dielectric

Power transfer analysis in a single phase dual active bridge

2013 ◽  
Vol 61 (4) ◽  
pp. 809-828 ◽  
Author(s):  
R. Barlik ◽  
M. Nowak ◽  
P. Grzejszczak
Keyword(s):  
Phase Shift ◽  
Single Phase ◽  
Semiconductor Devices ◽  
Switching Frequency ◽  
Preliminary Evaluation ◽  
Power Transfer ◽  
Power Losses ◽  
Dual Active Bridge ◽  
Voltage Drops ◽  
High Switching Frequency

Abstract This paper presents an analysis of the power transfer between two DC circuit by use a single phase galvanically isolated dual active bridge - DAB. The analytical description of instantaneous values of the currents in both DC and in AC circuits of the DAB is done. The influence of the dead time as well as voltage drops across the transistors and diodes of the bridges is examined. The different relations between voltages of the DC circuits coupled through DAB and various phase shift ratios are considered. The analytical relations describing the average values of the currents in DC circuits are derived. These currents can be used to predict the power in both DC circuits and power losses generated in semiconductor devices of the converter. It is assumed that the voltage drops across these devices in conduction states are constant. The calculation of the transferred power as well as power losses and energy efficiency for the DAB converter power rated 5600 VA which is used to energy transfer between DC circuits 280 V and 51 V±20% is presented. The proposed relations and calculation results can be useful for preliminary evaluation of power losses generated in semiconductor devices and for design of the cooling system. Due to the high switching frequency of 100 kHz, the phase shift modulation for the control of DAB is used. To validate the theoretical investigations a few experimental results are presented.

scholarly journals Design of a Step-Up DC–DC Converter for Standalone Photovoltaic Systems with Battery Energy Storages

Energies ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 44
Author(s):  
Yun-Gyeong Oh ◽  
Woo-Young Choi ◽  
Jung-Min Kwon
Keyword(s):  
Electronic Circuit ◽  
Prototype System ◽  
Photovoltaic Systems ◽  
Power Electronic ◽  
Lead Acid Battery ◽  
Power Losses ◽  
Switching Power ◽  
Switching Characteristics ◽  
Battery Energy ◽  
Voltage Feedback

This paper proposes a step-up DC–DC converter for a power electronic circuit for standalone photovoltaic systems with battery energy storages. The proposed DC–DC converter effectively converts low DC battery voltage into high DC-link voltage. It operates with soft-switching characteristics, which can reduce switching power losses. The proposed converter operates without output voltage feedback, which simplifies its control design. The operation principle of the proposed converter was described, along with the overall system configuration. The experimental results were discussed for the 500-W prototype system using a 12-V lead-acid battery.

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