scholarly journals Threshold Switching of Ag-Ga2Te3 Selector with High Endurance for Applications to Cross-Point Arrays

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Jaeyeon Kim ◽  
Jimin Lee ◽  
Minkyu Kang ◽  
Hyunchul Sohn
Keyword(s):  
Three Dimensional ◽  
Input Voltage ◽  
Switching Behavior ◽  
Practical Application ◽  
Promising Candidate ◽  
Cross Point ◽  
Pulse Input ◽  
Threshold Switching ◽  
Array Structures ◽  
Switching Characteristics

AbstractThreshold switching in chalcogenides has attracted considerable attention because of their potential application to high-density and three-dimensional stackable cross-point array structures. However, despite their excellent threshold switching characteristics, the selectivity and endurance characteristics of such selectors should be improved for practical application. In this study, the effect of Ag on the threshold switching behavior of a Ga2Te3 selector was investigated in terms of selectivity and endurance. The Ag-Ga2Te3 selector exhibited a high selectivity of 108 with low off-state current of < 100 fA, steep turn-on slope of 0.19 mV/dec, and high endurance of 109 cycles. The transient response was verified to depend on the pulse input voltage and measurement temperature. Considering its excellent threshold switching characteristics, the Ag-Ga2Te3 selector is a promising candidate for applications in cross-point array structures.

scholarly journals Bidirectional-nonlinear threshold switching behaviors and thermally robust stability of ZnTe selectors by nitrogen annealing

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Gabriel Jang ◽  
Mihyun Park ◽  
Da Seul Hyeon ◽  
WooJong Kim ◽  
JungYup Yang ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Annealing Treatment ◽  
Memory Storage ◽  
Switching Behavior ◽  
Switching Speed ◽  
Conduction Model ◽  
Ultra Low Power ◽  
Threshold Switching ◽  
Nitrogen Annealing ◽  
Chalcogenide Materials

Abstract Three-dimensional stackable memory frames involving the integration of two-terminal scalable crossbar arrays are expected to meet the demand for high-density memory storage, fast switching speed, and ultra-low power operation. However, two-terminal crossbar arrays introduce an unintended sneak path, which inevitably requires bidirectional nonlinear selectors. In this study, the advanced threshold switching (TS) features of ZnTe chalcogenide material-based selectors provide bidirectional threshold switching behavior, nonlinearity of 104, switching speed of less than 100 ns, and switching endurance of more than 107. In addition, thermally robust ZnTe selectors (up to 400 ℃) can be obtained through the use of nitrogen-annealing treatment. This process can prevent possible phase separation phenomena observed in generic chalcogenide materials during thermal annealing which occurs even at a low temperature of 250 ℃. The possible characteristics of the electrically and thermally advanced TS nature are described by diverse structural and electrical analyses through the Poole–Frankel conduction model.

PE-ALD of Ge1-xSx amorphous chalcogenide alloys for OTS applications

2021 ◽  
Author(s):  
Myoungsub Kim ◽  
Youngjun Kim ◽  
Minkyu Lee ◽  
Seok Man Hong ◽  
Hyung Keun Kim ◽  
...  
Keyword(s):  
High Performance Computing ◽  
High Performance ◽  
Memory Hierarchy ◽  
Three Dimensional ◽  
Cross Point ◽  
Computing Systems ◽  
Amorphous Chalcogenide ◽  
Threshold Switching ◽  
Chalcogenide Alloys ◽  
Performance Computing

Three-dimensional (3D) cross-point (X-point) technology, including amorphous chalcogenide-based ovonic threshold switching (OTS) selectors, is bringing new changes to the memory hierarchy for high-performance computing systems. To prepare for future 3D...

Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor

2016 ◽  
Vol 52 (26) ◽  
pp. 4828-4831 ◽  
Author(s):  
Chaochao Zhang ◽  
Jie Shang ◽  
Wuhong Xue ◽  
Hongwei Tan ◽  
Liang Pan ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Resistance Switching ◽  
Promising Candidate ◽  
Memory Switching ◽  
Threshold Switching ◽  
Switching Characteristics

The coexistence and inter-conversion between threshold and memory resistance switching in a ferritin memristor makes it a promising candidate for physiological applications.

Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories

2013 ◽  
Vol 107 ◽  
pp. 33-36 ◽  
Author(s):  
Seonghyun Kim ◽  
Jubong Park ◽  
Jiyong Woo ◽  
Chunhum Cho ◽  
Wootae Lee ◽  
...  
Keyword(s):  
Cross Point ◽  
Threshold Switching ◽  
Switching Characteristics ◽  
Point Type

A Real-Time Mathematical Model for Three-Dimensional Tidal Flow and Water Quality

1991 ◽  
Vol 24 (6) ◽  
pp. 171-177 ◽  
Author(s):  
Zeng Fantang ◽  
Xu Zhencheng ◽  
Chen Xiancheng
Keyword(s):  
Mathematical Model ◽  
Water Quality ◽  
Real Time ◽  
Control Volume ◽  
Tidal Flow ◽  
Three Dimensional ◽  
River Estuary ◽  
Pearl River Estuary ◽  
Practical Application ◽  
The Pearl River

A real-time mathematical model for three-dimensional tidal flow and water quality is presented in this paper. A control-volume-based difference method and a “power interpolation distribution” advocated by Patankar (1984) have been employed, and a concept of “separating the top-layer water” has been developed to solve the movable boundary problem. The model is unconditionally stable and convergent. Practical application of the model is illustrated by an example for the Pearl River Estuary.

The generation of adaptive assembly from predicting change propagation

2015 ◽  
Vol 35 (3) ◽  
pp. 269-280 ◽  
Author(s):  
Hu Qiao ◽  
Rong Mo ◽  
Ying Xiang
Keyword(s):  
Computer Aided Design ◽  
Three Dimensional ◽  
Original Method ◽  
Change Propagation ◽  
Assembly Model ◽  
Practical Application ◽  
Content Type ◽  
Design Structure ◽  
Aided Design ◽  
Practical Implications

Purpose – The purpose of this paper is to establish an adaptive assembly, to realize the adaptive changing of the models and to improve the flexibility and reliability of assembly change. For a three-dimensional (3D) computer-aided design (CAD) assembly in a changing process, there are two practical problems. One is delivering parameters’ information not smoothly. The other one is to easily destroy an assembly structure. Design/methodology/approach – The paper establishes associated parameters design structure matrix of related parts, and predicts possible propagation paths of the parameters. Based on the predicted path, structured storage is made for the affected parameters, tolerance range and the calculation relations. The study combines structured path information and all constrained assemblies to build the adaptive assembly, proposes an adaptive change algorithm for assembly changing and discusses the extendibility of the adaptive assembly. Findings – The approach would improve the flexibility and reliability of assembly change and be applied to different CAD platform. Practical implications – The examples illustrate the construction and adaptive behavior of the assembly and verify the feasibility and reasonability of the adaptive assembly in practical application. Originality/value – The adaptive assembly model proposed in the paper is an original method to assembly change. And compared with other methods, good results have been obtained.

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

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