scholarly journals Scattered Light in a Flood-plain Lake of Central Amazônia()

1972 ◽  
Vol 2 (2) ◽  
pp. 87-90
Author(s):  
W. L. B. Brinkmann

Abstract The light intensity below the surface of Lago Castanho was recorded at 10 minute intervals and compared to the total light intensity above the water surface. Scattered light of the lake water was rather constant and it was found to be sufficiently high to support the growth of photoautotrophic organisms in the near-surface layer. Below the floating plant communities scattered light was extremely low in intensity.

2014 ◽  
Author(s):  
Nikolay A. Bogatov ◽  
Victor V. Bakhanov ◽  
Aleksei V. Ermoshkin ◽  
Vasily I. Kazakov ◽  
Olga N. Kemarskaya ◽  
...  

1994 ◽  
Vol 9 (10) ◽  
pp. 2712-2716 ◽  
Author(s):  
Lu Taijing ◽  
S.C. Ng

Swirls and oxidation stacking faults (OSF) ring-bands in the near surface region of Si crystals have been detected and characterized by a 180°backscattering Rayleigh-Brillouin spectrometer using an argon-ion laser as its light source. In FZ Si wafers with swirls, the central region exhibits high scattered light with random undulation, the peripheral region with swirls shows a periodic undulation of scattered light intensity, while the region in-between is a nearly uniform zone of low scattered light intensity. In contrast to this, the CZ Si wafers with OSF ring-bands display a low uniformly scattered light background with a high undulated scattered light zone corresponding to the OSF ring-band. The scattered light intensity and its structure in the OSF ring-band vary with the heat-treatment conditions. The features of scattered light detected by the scattering spectrometer are discussed.


2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  

1995 ◽  
pp. 58-66
Author(s):  
N. M. Kalibernova

The fragment of the legend of the map concerning the vegetation of flood- plains and river-valleys in the subzones of northern and southern deserts is presented in the article. The map is compiled in Department of Vegetspon Geography and Cartography of Komarov Botanical Institute by a large team of botanists-geographers of the former USSR. The nature environments determining the development of vegetation of river-valleys in arid climate are conditioned by the intrazonal factors (alluvial and flood processes) at the background of natural zonal factors. Contrasts of environments and corresponding plant communities manifest themselves first of all. Mineralization of ground waters, salinity of soils, including the alluvial ones, are of essential importance. The practice of vegetation mapping of unstable habitats, to which floodplain landscapes belong, has shown that units of phytocoenological classification is of little use for this purpose. The heterogeneity of vegetation, consisting of short-term unstable serial communities generates a need for typification of space combinations of such phytocoenoses. For this purpose it is convenient to use generalized ecological-dinamic series, including plant communities of all levels within the limits of definite segment of valley. These series are the mapping units on the map. The vegetation of the first terrace is also nessecary to include in a single series with flood-plain vegetation because it has supplementary influence of ground waters. The higher divisions of the legend are based on zonal characters: vegetation of valleys in northern, middle and southern deserts. 13 numbers are used to show the vegetation cover of flood-plains and valleys. Additional 7 numbers are used for the out-of-valley meadow vegetation. The content is enriched by using of the letters by the numbers showing the geographic variants of series and ciphers for combination of series and out-of-series communities. The text legend is supplemented by the matrix (table), showing the subordination of subtitles, zonal position and geographic distribution of divisions. The types of series in the matrix are listed with indication of the main dominant species that gives the additional information on the legend divisions. The author's conclusion is that valley vegetation reveals clearly the zonal features, correlating with zonal (desert) vegetation.


2012 ◽  
Vol 602-604 ◽  
pp. 757-761
Author(s):  
Guang Ming Xian ◽  
Jing Ping Qu ◽  
Bi Qing Zeng

This work aims at developing an accurate measurement of characterization flow field of polymer melts by small-angle light scattering (SALS). In this article we propose a new method, based on radial basis function neural network (RBFNN) for predicting the optimum vibration field parameters. A laser light passes through polymer melts in the visual slit die. The results reported in this study were obtained with polystyrene (PS) with rotation speed at 20 rpm. In order to capture the scattered light, a polarizer and an analyzer are placed before and after the polymer melts. RBFNN inputs consist of frequency and amplitude, which are used as input parameters to predict the maximum light intensity projection area. RBFNN predicts that the optimum value of frequency, amplitude are 15.86 Hz and 0.20mm, respectively. And the maximum light intensity projection area is predicted to be 9260 pixels.


1997 ◽  
Vol 469 ◽  
Author(s):  
V. C. Venezia ◽  
T. E. Haynes ◽  
A. Agarwal ◽  
H. -J. Gossmann ◽  
D. J. Eaglesham

ABSTRACTThe diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si+, 1×1016/cm2, implant. A 4× larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10× smaller diffusion relative to markers without the MeV Si+ implant. This data demonstrates that a 2 MeV Si+ implant injects vacancies into the near surface region.


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