scholarly journals Incorporation of N in the TiO2 Lattice Versus Oxidation of TiN: Influence of the Deposition Method on the Energy Gap of N-Doped TiO2 Deposited by Reactive Magnetron Sputtering

2017 ◽  
Vol 20 (2) ◽  
pp. 549-554 ◽  
Author(s):  
Diego Alexandre Duarte ◽  
Marcos Massi
Keyword(s):  
Magnetron Sputtering ◽  
Energy Gap ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Deposition Method ◽  
Doped Tio2 ◽  
Lattice Versus ◽  
Tio2 Lattice

Photocatalytic Zn-doped TiO2 films prepared by DC reactive magnetron sputtering

Vacuum ◽  
2007 ◽  
Vol 82 (3) ◽  
pp. 328-335 ◽  
Author(s):  
Wenjie Zhang ◽  
Shenglong Zhu ◽  
Ying Li ◽  
Fuhui Wang
Keyword(s):  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Tio2 Films ◽  
Reactive Magnetron ◽  
Doped Tio2 ◽  
Dc Reactive Magnetron Sputtering

A Study on the Preparation of TiO2-xNx Films by Reactive Deposition and Their Absorption Properties in Visible Region

2005 ◽  
Vol 475-479 ◽  
pp. 1223-1226 ◽  
Author(s):  
Ming Zhao ◽  
Da Ming Zhuang ◽  
Gong Zhang ◽  
Ling Fang ◽  
Min Sheng Wu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Absorption Edge ◽  
Visible Region ◽  
Reactive Magnetron Sputtering ◽  
Tio2 Films ◽  
Reactive Magnetron ◽  
Tio2 Thin Films ◽  
Doped Tio2 ◽  
Nitrogen Doped

The nitrogen-doped TiO2 thin films were prepared by mid-frequency alternative reactive magnetron sputtering technique. The N concentration of the nitrogen-doped TiO2 thin films was analyzed by XPS. And the absorption spectra of the films in ultraviolet and visible region were also investigated. The results show that the mid-frequency alternative reactive magnetron sputtering technique is a convenient method for growing TiO2-xNx. Annealing the nitrogen-doped TiO2 thin film in nitrogen atmosphere under 380°C is helpful for increase the concentration of nitrogen in the film, but the ratio of N2 in reactive gas is mainly influence the concentration of nitrogen in the Ti-N bond in the TiO2 film. The increase of the thickness of nitrogen-doped TiO2 films will enhance the absorbability of the film in the ultraviolet and visible region. The wavelength of the absorption edge of TiO2-xNx film with 1.5% nitrogen shift to 441nm from 387nm, which is the absorption edge for undoped TiO2 films.

Yttrium-doped TiO2 films prepared by means of DC reactive magnetron sputtering

2009 ◽  
Vol 155 (1-2) ◽  
pp. 83-87 ◽  
Author(s):  
Wenjie Zhang ◽  
Kuanling Wang ◽  
Shenglong Zhu ◽  
Ying Li ◽  
Fuhui Wang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Tio2 Films ◽  
Reactive Magnetron ◽  
Doped Tio2 ◽  
Dc Reactive Magnetron Sputtering

Low Temperature Fabrication of Microcrystalline Silicon Germanium Films by RF Reactive Magnetron Sputtering

2006 ◽  
Vol 910 ◽  
Author(s):  
Isao Nakamura ◽  
Toru Ajiki ◽  
Masao Isomura
Keyword(s):  
Magnetron Sputtering ◽  
Silicon Germanium ◽  
Energy Gap ◽  
Wavelength Region ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Microcrystalline Silicon ◽  
Long Wavelength ◽  
Glass Substrates ◽  
Germanium Films

AbstractMicrocrystalline silicon germanium films (μc-SiGe) were fabricated on Corning #7059 glass substrates by the RF reactive magnetron sputtering method. The μc-SiGe films with Ge fraction of 0.7-0.8 could be crystallized at of 200 °C by H2 introduction into the sputtering gases. The absorption coefficients of the films decrease in long wavelength region corresponding to the photon energies below the energy gap by the decrease in the substrate temperature and become close to those of single crystal Si0.25Ge0.75. The dark conductivities show lower values of 10-7 S/cm at 200 °C and 300 °C with H2 introduction. Besides, the photosensitivities are observed in these samples. These results indicate that the H2 introduction into the sputtering gas has two important effects to decrease the crystallization temperature of the μc-SiGe and to improve the film properties by reducing the dangling bond defects.

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